Patents by Inventor Satoko Iida
Satoko Iida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11991463Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.Type: GrantFiled: April 13, 2023Date of Patent: May 21, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Tomohiko Asatsuma, Ryosuke Nakamura, Satoko Iida, Koshi Okita
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Patent number: 11973096Abstract: The present technology relates to a solid-state imaging element, a solid-state imaging element package, and electronic equipment that can suppress occurrence of flares. The solid-state imaging element includes an effective pixel region and a peripheral circuit region. The effective pixel region includes a plurality of pixels arranged two-dimensionally in a matrix pattern. The peripheral circuit region is provided around the effective pixel region. The effective pixel region has a pixel-to-pixel light-shielding film formed at boundary portions between the pixels. In a region on a substrate where a rib structure is formed within the peripheral circuit region, no light-shielding film is formed in the same layer as the pixel-to-pixel light-shielding film. The present technology is applicable, for example, to a solid-state imaging element package including a cover glass that protects a light-receiving surface of the solid-state imaging element.Type: GrantFiled: October 11, 2019Date of Patent: April 30, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Satoko Iida, Tomohiko Asatsuma
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Patent number: 11902679Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.Type: GrantFiled: December 8, 2020Date of Patent: February 13, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomohiko Asatsuma, Ryosuke Nakamura, Satoko Iida, Koshi Okita
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Patent number: 11855108Abstract: A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.Type: GrantFiled: September 2, 2019Date of Patent: December 26, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Satoko Iida, Yoshiaki Kitano, Kengo Nagata, Toshiaki Ono, Tomohiko Asatsuma
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Publication number: 20230403483Abstract: Imaging elements and imaging devices are disclosed. In one example, a potential of a charge retaining unit that retains a charge generated by photoelectric conversion is adjusted. An imaging element includes a photoelectric conversion unit, a charge retaining unit, a charge transfer unit, a reset unit, an image signal generating unit that generates an image signal, capacitive coupling wiring, and a potential adjustment unit. The capacitive coupling wiring is different from wiring that transmits control signals of the charge transfer unit, the reset unit, and the image signal generating unit and wiring that transmits a generated image signal and is capacitively coupled to the charge retaining unit. The potential adjustment unit applies an adjustment signal for adjusting the potential of the charge retaining unit via the capacitive coupling wiring.Type: ApplicationFiled: December 17, 2021Publication date: December 14, 2023Inventors: Yuki Hattori, Satoko Iida
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Publication number: 20230299113Abstract: Provided is a solid-state imaging device that allows high saturation and maximum transfer performance to be achieved. The solid-state imaging device includes a plurality of unit pixels arranged in a two-dimensional array. The plurality of unit pixels each includes a photoelectric conversion unit that photoelectrically converts incident light and a wiring layer stacked on a surface opposite to a light-incident side surface of the photoelectric conversion unit and having a detection node that detects charge stored at the photoelectric conversion unit. In at least some of the plurality of unit pixels, a center of the detection node is coincident with a light receiving center of the photoelectric conversion unit.Type: ApplicationFiled: July 2, 2021Publication date: September 21, 2023Inventors: SATOKO IIDA, YUKI HATTORI, YOSHIMITSU NAKASHIMA
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Publication number: 20230254602Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.Type: ApplicationFiled: April 13, 2023Publication date: August 10, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomohiko ASATSUMA, Ryosuke NAKAMURA, Satoko IIDA, Koshi OKITA
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Publication number: 20230224602Abstract: A solid-state imaging device includes a photoelectric converter, a transfer gate transistor, and an overflow gate transistor. The photoelectric converter is provided in a semiconductor substrate and generates photocharge. The transfer gate transistor is provided at a surface of the semiconductor substrate as a vertical transistor and reads the photocharge stored in the photoelectric converter. The overflow gate transistor is provided at the surface of the semiconductor substrate as a planar transistor and transfers the photocharge overflowing from the photoelectric converter.Type: ApplicationFiled: March 29, 2021Publication date: July 13, 2023Inventor: SATOKO IIDA
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Publication number: 20230018370Abstract: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.Type: ApplicationFiled: December 8, 2020Publication date: January 19, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomohiko ASATSUMA, Ryosuke NAKAMURA, Satoko IIDA, Koshi OKITA
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Solid-state imaging element, method of driving solid-state imaging element, and electronic apparatus
Patent number: 11509842Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.Type: GrantFiled: October 12, 2018Date of Patent: November 22, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshiaki Ono, Satoko Iida, Tomohiko Asatsuma, Yoshiaki Kitano, Yusuke Matsumura, Ryoko Kajikawa -
Publication number: 20220038648Abstract: Degradation of image quality is suppressed. A solid-state imaging device according to an embodiment includes: a plurality of first photoelectric conversion elements having a first sensitivity; a plurality of second photoelectric conversion elements having a second sensitivity lower than the first sensitivity; a plurality of charge storage regions that stores charge generated by each of the plurality of second photoelectric conversion elements; a plurality of first color filters; and a plurality of second color filters. In each of the plurality of first photoelectric conversion elements, the second color filter for the second photoelectric conversion element included in the charge storage region closest to the first photoelectric conversion element transmit a wavelength component identical to that of the first color filter for the first photoelectric conversion element closest to the charge storage region.Type: ApplicationFiled: November 14, 2019Publication date: February 3, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Satoko IIDA, Atsushi SUZUKI, Yorito SAKANO
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Publication number: 20210343771Abstract: The present technology relates to a solid-state imaging element, a solid-state imaging element package, and electronic equipment that can suppress occurrence of flares. The solid-state imaging element includes an effective pixel region and a peripheral circuit region. The effective pixel region includes a plurality of pixels arranged two-dimensionally in a matrix pattern. The peripheral circuit region is provided around the effective pixel region. The effective pixel region has a pixel-to-pixel light-shielding film formed at boundary portions between the pixels. In a region on a substrate where a rib structure is formed within the peripheral circuit region, no light-shielding film is formed in the same layer as the pixel-to-pixel light-shielding film. The present technology is applicable, for example, to a solid-state imaging element package including a cover glass that protects a light-receiving surface of the solid-state imaging element.Type: ApplicationFiled: October 11, 2019Publication date: November 4, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Satoko IIDA, Tomohiko ASATSUMA
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Publication number: 20210202545Abstract: A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion. of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element. second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.Type: ApplicationFiled: September 2, 2019Publication date: July 1, 2021Inventors: SATOKO IIDA, YOSHIAKI KITANO, KENGO NAGATA, TOSHIAKI ONO, TOMOHIKO ASATSUMA
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Patent number: 11039099Abstract: An increase in memory capacity is suppressed in a solid-state imaging element that performs correlated double sampling processing. A pixel circuit sequentially generates each of a predetermined reset level and a plurality of signal levels corresponding to the exposure amount. An analog-to-digital converter converts a predetermined reset level into digital data and outputs the data as reset data, converts each of the plurality of pieces of signal data into digital data, and outputs the data as signal data. An arithmetic circuit holds a difference between the reset data and the signal data output first, as held data in a memory, and then adds the held data and the signal data output second and subsequent times together and causes the memory to hold the added data as new held data.Type: GrantFiled: October 10, 2017Date of Patent: June 15, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masaki Sakakibara, Yorito Sakano, Satoko Iida
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Patent number: 10917591Abstract: The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.Type: GrantFiled: March 30, 2018Date of Patent: February 9, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Satoko Iida, Masaki Sakakibara, Yorito Sakano, Naosuke Asari, Masaaki Takizawa, Tomohiko Asatsuma, Shogo Furuya
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Patent number: 10868056Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus which are capable of utilizing almost all photoelectrically converted charges for signals during high capacitance. A pixel includes a selection transistor that is disposed on a drain side of an amplification transistor and selects a read-out row, the selection transistor selects the read-out row after reset by a reset transistor, and a transfer transistor performs reference potential read-out during high capacitance prior to reference potential read-out during low capacitance. For example, the present disclosure is applicable to a lamination-type solid-state imaging element.Type: GrantFiled: November 30, 2017Date of Patent: December 15, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Yoshiaki Tashiro, Satoko Iida, Yorito Sakano
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SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS
Publication number: 20200260026Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.Type: ApplicationFiled: October 12, 2018Publication date: August 13, 2020Inventors: TOSHIAKI ONO, SATOKO IIDA, TOMOHIKO ASATSUMA, YOSHIAKI KITANO, YUSUKE MATSUMURA, RYOKO KAJIKAWA -
Publication number: 20200066773Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus which are capable of utilizing almost all photoelectrically converted charges for signals during high capacitance. A pixel includes a selection transistor that is disposed on a drain side of an amplification transistor and selects a read-out row, the selection transistor selects the read-out row after reset by a reset transistor, and a transfer transistor performs reference potential read-out during high capacitance prior to reference potential read-out during low capacitance. For example, the present disclosure is applicable to a lamination-type solid-state imaging element.Type: ApplicationFiled: November 30, 2017Publication date: February 27, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yoshiaki TASHIRO, Satoko IIDA, Yorito SAKANO
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Publication number: 20200029036Abstract: The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.Type: ApplicationFiled: March 30, 2018Publication date: January 23, 2020Inventors: SATOKO IIDA, MASAKI SAKAKIBARA, YORITO SAKANO, NAOSUKE ASARI, MASAAKI TAKIZAWA, TOMOHIKO ASATSUMA, SHOGO FURUYA
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Publication number: 20190273883Abstract: An increase in memory capacity is suppressed in a solid-state imaging element that performs correlated double sampling processing. A pixel circuit sequentially generates each of a predetermined reset level and a plurality of signal levels corresponding to the exposure amount. An analog-to-digital converter converts a predetermined reset level into digital data and outputs the data as reset data, converts each of the plurality of pieces of signal data into digital data, and outputs the data as signal data. An arithmetic circuit holds a difference between the reset data and the signal data output first, as held data in a memory, and then adds the held data and the signal data output second and subsequent times together and causes the memory to hold the added data as new held data.Type: ApplicationFiled: October 10, 2017Publication date: September 5, 2019Inventors: MASAKI SAKAKIBARA, YORITO SAKANO, SATOKO IIDA