Abstract: A hydrogen sensor includes a first electrode that is a planar electrode; a second electrode that is a planar electrode facing the first electrode and includes an exposed portion to be exposed to a gas containing hydrogen; a metal oxide layer disposed between the two facing surfaces of the first electrode and the second electrode and having the resistance value that is changed by the exposed portion being exposed to the gas; a first terminal, a second terminal, and a heat dissipation portion spaced apart from each other; one or more first vias provided above the second electrode and electrically connected to the first terminal and the second electrode; one or more second vias provided above the second electrode and electrically connected to the second terminal and the second electrode; and one or more third vias above the second electrode and in contact with the heat dissipation portion.

Abstract: Novel bicycloamide derivatives (general formula (1)) and pharmaceutically acceptable salts thereof effectively inhibit DPP-IV. The bicycloamide derivatives are represented by the general formula (1): Pharmaceutically acceptable salts thereof are also included (Example: (2S,4S)-1-[[(4-carbamoylbicyclo[2.2.2]oct-1-yl)amino]acetyl]-4-fluoropyrrolidine-2-carbonitrile)).

Abstract: Novel bicycloamide derivatives (general formula (1)) and pharmaceutically acceptable salts thereof effectively inhibit DPP-IV. The bicycloamide derivatives are represented by the general formula (1): Pharmaceutically acceptable salts thereof are also included (Example: (2S,4S)-1-[[(4-carbamoylbicyclo[2.2.2]oct-1-yl)amino]acetyl]-4-fluoropyrrolidine-2-carbonitrile)).

Abstract: There is provided a copper alloy which comprises 1.0 to 3.5 wt. % of Ni, 0.2 to 0.9 wt. % of Si, 0.02 to 1.0 wt. % of Mn, 0.1 to 5.0 wt. % of Zn, 0.1 to 2.0 wt. % of Sn, and 0.001 to 0.01 wt. % of Mg, and 0.001 to 0.01 wt. % of one or more members selected from Cr, Ti, and Zr, with the remainder being substantially Cu. The copper alloy is suitable for lead frames for semiconductors and is also suitable for terminals and connectors. The copper alloy is produced by a process which comprises starting cooling from a temperature above 600.degree. C. at a rate of 5.degree. C. per second or higher after hot rolling of an ingot of said copper alloy, performing annealing at a temperature of 400.degree. to 600.degree. C. for 5 minutes to 4 hours after cold working, performing refining finish rolling, and performing annealing at a temperature of 400.degree. to 600.degree. C. for a short time of 5 to 60 seconds.