Abstract: A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

Abstract: A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna.

Abstract: An energy storage device includes an electrode assembly, a container that contains the electrode assembly therein, a metallic cover member that closes the opening of the container and has a first fitting portion, and a current collector having a second fitting portion that is fitted to the first fitting portion in a fitted state. Thus, the compact energy storage device having a large capacity can suppress the positional deviation between the cover member and the current collector.

Abstract: A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

Abstract: An energy storage device includes an electrode assembly, a container that contains the electrode assembly therein, a metallic cover member that closes the opening of the container and has a first fitting portion, and a current collector having a second fitting portion that is fitted to the first fitting portion in a fitted state. Thus, the compact energy storage device having a large capacity can suppress the positional deviation between the cover member and the current collector.

Abstract: A battery includes positive and negative external terminals having exposed portions exposed from a casing to the outside, positive and negative current collectors connected to the external terminals, and electrode assemblies having positive and negative electrodes and a separator. The positive and negative electrodes are wound with the separator being interposed so as to have positions shifted to opposite sides in a width direction to the separator. Formed in the casing is a narrowly elongated gap extending between the positive current collector side and the negative current collector side. The positive electrode side of the gap is closed by a closure member. A foreign material is prevented from moving without decreasing an electric capacity of the battery and deteriorating injection property of an electrolytic solution.

Abstract: A first high frequency processing unit detects a first broadcasting wave transmitted using a first frequency band, and extracts a first high frequency signal. Further, a second high frequency processing unit detects a second broadcasting wave transmitted using a second frequency band different from the first frequency band, and extracts a second high frequency signal. Furthermore, at least one local oscillator generates a local oscillation signal used in the first high frequency processing unit and the second high frequency processing unit.

Abstract: An object is to provide a vacuum processing apparatus that is capable of suppressing the costs and making control easy. Provided is a vacuum processing apparatus that includes a vacuum section (2) of which inside is held in vacuum, a placing section (3) that is disposed inside the vacuum section (2) and is capable of placing a workpiece thereon, a linear motor 4) that includes coils (415) and makes the placing section (3) travel within the vacuum section, wherein air is placed inside the placing section (3) while being isolated from the vacuum section (2), and the coils (415) of the linear motor (4) are disposed inside the placing section (3).

Abstract: A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

Abstract: There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput. The substrate processing system for manufacturing an organic EL device by forming a multiple number of layers including, e.g., an organic layer on a substrate includes at least one transfer module configured to be evacuable and arranged along a straight transfer route. Within the transfer module, a multiple number of loading/unloading areas for loading/unloading the substrate with respect to a processing apparatus and at least one stocking area positioned between the loading/unloading areas are alternately arranged along the transfer route in series, and the processing apparatus is connected with a side surface of the transfer module at a position facing each of the loading/unloading areas.

Abstract: A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular r

Abstract: An object is to provide a vacuum processing apparatus that is capable of suppressing the costs and making control easy. Provided is a vacuum processing apparatus that includes a vacuum section (2) of which inside is held in vacuum, a placing section (3) that is disposed inside the vacuum section (2) and is capable of placing a workpiece thereon, a linear motor 4) that includes coils (415) and makes the placing section (3) travel within the vacuum section, wherein air is placed inside the placing section (3) while being isolated from the vacuum section (2), and the coils (415) of the linear motor (4) are disposed inside the placing section (3).

Abstract: Deposits adhered on the inner surface of a processing chamber or the like of an evaporating apparatus can be removed without having to open the processing chamber. Disclosed is an evaporating apparatus for performing a film forming process on a target object to be processed by vapor deposition, the apparatus including: an evaporating head for supplying vapor of a film forming material to the target object; vapor generating units for vaporizing the film forming material; a cleaning gas generating unit for generating a cleaning gas; vapor supply pipes for supplying the vapor of the film forming material to the evaporating head from the vapor generating units; and a cleaning gas supply pipe for supplying the cleaning gas to the evaporating head from the cleaning gas generating unit, wherein opening/closing valves are installed on the vapor supply pipes and the cleaning gas supply pipe.

Abstract: A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

Abstract: The present invention provides a receiver that includes a plurality of tuners for receiving broadcasts such as satellite broadcast. A tuner circuit (1) includes an input terminal (11) for inputting a broadcast wave in which a video signal and/or an audio signal are modulated in a predetermined format, and a mount layer (13) on which a main circuit (12) for selecting, from the broadcast wave, a video signal and/or an audio signal included in a predetermined frequency band is mounted. In the tuner circuit (1), a first ground layer (15) is disposed, through a first dielectric layer (14), on the surface opposite to that on which the main circuit (12) of the mount layer (13) is arranged, and a second ground layer (17) is disposed through a second dielectric layer, thereby suppressing mutual interference between tuners.

Abstract: A substrate processing apparatus 1 has: sensors 21 and 22 provided in an etching chamber 14 and configured to detect a relative position between the etching chamber 14 and a wafer transfer mechanism 23; a control section 38 configured to correct positional displacement; a motor controller 39; a motor 28; and a motor 30. Since the positional displacement of a wafer W can be corrected, the wafer transfer mechanism 23 is capable of carrying the wafer W into the etching chamber 14 without causing any positional displacement, so that the wafer W can be placed on a susceptor 19 at a proper position.

Abstract: The upper electrode (15a) and the lower electrode (15b) are installed in the chamber (2) in parallel. Between these electrodes, the upper electrode (15a) is electrically grounded. The lower electrode (15b) is connected to the first RF power generator (13) via the low-pass filter (14) and to the second RF power generator (22) via the high-pass filter (23). Wafer W is held against the upper part of the lower electrode (15b) by the high-temperature electrostatic chuck ESC. By being distributed the first and the second RF electric power from the RF power generators (13) and (22), respectively, plasma is produced near the lower electrode (15b), and the wafer W is processed by the plasma. By these procedures, plasma process apparatus with high efficiency in plasma processing and simple structure can be offered.

Abstract: A tuner and receiver apparatus that can output first transport stream data and second transport stream data having excellent bit error rate characteristics for two systems even when a first tuner portion and a second tuner portion are provided on one board. A first tuner portion is provided on one surface of a board, and a second tuner portion is provided on the other side of the board.

Abstract: The present invention provides a receiver that includes a plurality of tuners for receiving broadcasts such as satellite broadcast. A tuner circuit (1) includes an input terminal (11) for inputting a broadcast wave in which a video signal and/or an audio signal are modulated in a predetermined format, and a mount layer (13) on which a main circuit (12) for selecting, from the broadcast wave, a video signal and/or an audio signal included in a predetermined frequency band is mounted. In the tuner circuit (1), a first ground layer (15) is disposed, through a first dielectric layer (14), on the surface opposite to that on which the main circuit (12) of the mount layer (13) is arranged, and a second ground layer (17) is disposed through a second dielectric layer, thereby suppressing mutual interference between tuners.

Abstract: The upper electrode (15a) and the lower electrode (15b) are installed in the chamber (2) in parallel. Between these electrodes, the upper electrode (15a) is electrically grounded. The lower electrode (15b) is connected to the first RF power generator (13) via the low-pass filter (14) and to the second RF power generator (22) via the high-pass filter (23). Wafer W is held against the upper part of the lower electrode (15b) by the high-temperature electrostatic chuck ESC. By being distributed the first and the second RF electric power from the RF power generators (13) and (22), respectively, plasma is produced near the lower electrode (15b), and the wafer W is processed by the plasma. By these procedures, plasma process apparatus with high efficiency in plasma processing and simple structure can be offered.