Abstract: A direct-current power supply includes: a plurality of semiconductor devices each of which is a multiphase converter incorporating a plurality of semiconductor switching elements and a drive circuit to drive the plurality of semiconductor switching elements; a plurality of first parasitic inductances, each of which connects a reference potential terminal of the drive circuit and output N terminals of the semiconductor switching elements, in the plurality of semiconductor devices; a smoothing capacitor; and an inverter.

Abstract: A switch for switching a function setting of an air conditioner and a memory that stores therein a setting value of the function setting are provided. The setting value stored in the memory is rewritable according to an instruction from a remote controller. The function setting of the air conditioner is defined by the setting value stored in the memory. Regarding functions set in the air conditioner, priority as to whether to give priority to setting with the switch or to validate setting with the remote controller is switched for each function according to setting from the remote controller.

Abstract: A switch for switching a function setting of an air conditioner and a memory that stores therein a setting value of the function setting are provided. The setting value stored in the memory is rewritable according to an instruction from a remote controller. The function setting of the air conditioner is defined by the setting value stored in the memory. Regarding functions set in the air conditioner, priority as to whether to give priority to setting with the switch or to validate setting with the remote controller is switched for each function according to setting from the remote controller.

Abstract: A navigation apparatus acquires, through an antenna and a receiver, external information such as traffic information or the like, and a control unit in the navigation apparatus acquires validity time information from the external information. If the validity time information includes a standard time that represents a current time, the standard time together with a relative time or period information in the validity time information is used for determining whether a valid period has passed. If the validity time information does not include the standard time representing the current time, the lapse of the valid period is determined based on the standard time generated by a standard time generator and one of the relative time and the period information in the validity time information. Then, the external information is invalidated by deleting the information from an information storage if it is determined that the valid period has passed.

Abstract: A semiconductor device of high reliability and element-integrating performance, has a substrate (silicon substrate), a first trench made in the silicon substrate, a passive element layer buried in the first trench, and a first insulating film (silicon nitride film) arranged between the first trench and the passive element layer. The passive element layer projects upwardly relative to the substrate, and so too preferably the adjacent insulating film. An active element is formed such that its gate electrode, which is preferably fully silicided, has an upper end at a level higher than the upper surface of the passive element film.

Abstract: A vehicular navigation apparatus includes a control unit that sets a reachable area that is reachable by a vehicle, such that a remaining charge amount of a battery of the vehicle has a remaining charge amount above a quick charge threshold at the reachable area. The quick charge threshold is provided as a charge level of the battery that is required for a quick charge operation of the battery. The control unit further searches for a battery charge spot in the reachable area, and provides guidance to the battery charge spot. The control unit may further redefine the reachable area where a charge operation is scheduled, based on preferences provided by a user.

Abstract: A vehicle travel assisting system has an area setting part for setting an area, in which weather information is acquired. The area setting part sets the area by using at least one of an attribute of a vehicle travel road, vehicle equipment for bad weather travel, and vehicle information such as a vehicle type and vehicle chassis lowest height. If the acquired weather information varies along a travel road of the vehicle, weather information is provided at earlier time according to the attribute of the travel road or unnecessary weather information is limited according to the equipment or the information of the vehicle.

Abstract: A weather information notification apparatus mounted to a vehicle is disclosed. The weather information notification apparatus includes: an acquisition section that cyclically acquires information about weather at a point; a record section that stores the acquired information about weather at the point in an external storage medium unit; and a notification section that causes an external notification unit to notify information about non-latest weather at the point, the information about non-latest weather at the point being a piece of the information about weather at the point stored in the external storage medium unit.

Abstract: An insulating cover film is formed over at least a portion of a gate electrode in the direction of the channel width. A diffusion layer is formed to a portion of a substrate situating at a device forming region, thereby forming a source and a drain of a transistor. An insulating layer is formed over the device forming region, over the gate electrode, and over the insulating cover film. A contact is formed to the insulating layer and connected to the diffusion layer. A silicide layer is formed over the gate electrode. A side wall is formed higher than the gate electrode in a region in which the insulating cover film is formed. Then, the contact faces a region of the gate electrode in which the insulating cover film is formed.

Abstract: A semiconductor device of high reliability and element-integrating performance, has a substrate (silicon substrate), a first trench made in the silicon substrate, a passive element layer buried in the first trench, and a first insulating film (silicon nitride film) arranged between the first trench and the passive element layer. The passive element layer projects upwardly relative to the substrate, and so too preferably the adjacent insulating film. An active element is formed such that its gate electrode, which is preferably fully silicided, has an upper end at a level higher than the upper surface of the passive element film.

Abstract: In a navigation system, a switching use dictionary is provided as storing an aggregation of switching commands, which are also stored in the individual language-specific dictionaries including the language 1 dictionary, language 2 dictionary, . . . , and language n dictionary. It is determined whether a switching command included in the switching use dictionary is matched with an inputted speech. When a certain switching command is determined to be matched with the inputted speech, a certain language-specific dictionary corresponding to the certain switching command is substituted for a default active language-specific dictionary. Thus, the certain language-specific dictionary is newly selected as an active language-specific dictionary used for operating the navigation system by a speech input.

Abstract: A vehicle travel assisting system has an area setting part for setting an area, in which weather information is acquired. The area setting part sets the area by using at least one of an attribute of a vehicle travel road, vehicle equipment for bad weather travel, and vehicle information such as a vehicle type and vehicle chassis lowest height. If the acquired weather information varies along a travel road of the vehicle, weather information is provided at earlier time according to the attribute of the travel road or unnecessary weather information is limited according to the equipment or the information of the vehicle.

Abstract: A semiconductor device includes a silicon substrate, a strain-inducing layer, a silicon layer, a FET, and an isolation region. On the silicon substrate, the strain-inducing layer is provided. On the strain-inducing layer, the silicon layer is provided. The strain-inducing layer induces lattice strain in a channel region of the FET in the silicon layer. The silicon layer includes the FET. The FET includes a source/drain region, an SD extension region, a gate electrode and a sidewall. The source/drain region and the strain-inducing layer are spaced from each other. Around the FET, the isolation region is provided. The isolation region penetrates the silicon layer so as to reach the strain-inducing layer.

Abstract: A weather information notification apparatus mounted to a vehicle is disclosed. The weather information notification apparatus includes: an acquisition section that cyclically acquires information about weather at a point; a record section that stores the acquired information about weather at the point in an external storage medium unit; and a notification section that causes an external notification unit to notify information about non-latest weather at the point, the information about non-latest weather at the point being a piece of the information about weather at the point stored in the external storage medium unit.

Abstract: In a navigation system, a switching use dictionary is provided as storing an aggregation of switching commands, which are also stored in the individual language-specific dictionaries including the language 1 dictionary, language 2 dictionary, . . . , and language n dictionary. It is determined whether a switching command included in the switching use dictionary is matched with an inputted speech. When a certain switching command is determined to be matched with the inputted speech, a certain language-specific dictionary corresponding to the certain switching command is substituted for a default active language-specific dictionary. Thus, the certain language-specific dictionary is newly selected as an active language-specific dictionary used for operating the navigation system by a speech input.

Abstract: A semiconductor device includes a silicon substrate, a strain-inducing layer, a silicon layer, a FET, and an isolation region. On the silicon substrate, the strain-inducing layer is provided. On the strain-inducing layer, the silicon layer is provided. The strain-inducing layer induces lattice strain in a channel region of the FET in the silicon layer. The silicon layer includes the FET. The FET includes a source/drain region, an SD extension region, a gate electrode and a sidewall. The source/drain region and the strain-inducing layer are spaced from each other. Around the FET, the isolation region is provided. The isolation region penetrates the silicon layer so as to reach the strain-inducing layer.

Abstract: A navigation apparatus acquires, through an antenna and a receiver, external information such as traffic information or the like, and a control unit in the navigation apparatus acquires validity time information from the external information. If the validity time information includes a standard time that represents a current time, the standard time together with a relative time or period information in the validity time information is used for determining whether a valid period has passed. If the validity time information does not include the standard time representing the current time, the lapse of the valid period is determined based on the standard time generated by a standard time generator and one of the relative time and the period information in the validity time information. Then, the external information is invalidated by deleting the information from an information storage if it is determined that the valid period has passed.

Abstract: A semiconductor device includes a silicon substrate, a strain-inducing layer, a silicon layer, a FET, and an isolation region. On the silicon substrate, the strain-inducing layer is provided. On the strain-inducing layer, the silicon layer is provided. The strain-inducing layer induces lattice strain in a channel region of the FET in the silicon layer. The silicon layer includes the FET. The FET includes a source/drain region, an SD extension region, a gate electrode and a sidewall. The source/drain region and the strain-inducing layer are spaced from each other. Around the FET, the isolation region is provided. The isolation region penetrates the silicon layer so as to reach the strain-inducing layer.

Abstract: A method of manufacturing a semiconductor device including an elevated source/drain structure that can suppress emergence of a junction leak current. The method includes forming a trench on a predetermined position on a surface of a semiconductor substrate, forming an isolation layer so as to fill the trench, and so as to protrude from the surface of the semiconductor substrate, forming a film so as to cover the semiconductor substrate and the isolation layer, selectively removing the film thus to form a cover layer on a lateral portion of the isolation layer exposed on the semiconductor substrate, forming a gate electrode unit on the semiconductor substrate, forming an epitaxial layer in a region between the cover layer and the gate electrode unit on the surface of the semiconductor substrate 102, and forming a silicide layer at least on part of the epitaxial layer.

Abstract: The present invention relates to a method of manufacturing a non-volatile semiconductor device having a structure in which layers of a first insulating film, a first polysilicon layer, a second insulating film and a second polysilicon layer are formed, in this order, on a semiconductor substrate; which comprises the steps of forming the first insulating film on the semiconductor substrate and thereafter forming the first polysilicon layer; patterning the first polysilicon layer; performing a heat treatment in hydrogen atmosphere; forming the second insulating film; forming the second polysilicon layer; and patterning the second polysilicon layer. In accordance with the present invention, a non-volatile semiconductor device having excellent hold characteristics and only a small dispersion of element characteristics can be manufactured.