Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

Abstract: A substrate treatment method for performing a treatment for forming a pattern through precursor formation and a condensation reaction of a metal-containing resist, includes: suppressing the precursor formation of a film of the metal-containing resist formed on a substrate on which exposure and a PEB treatment have been performed; and subsequent thereto, improving selectivity of the film by the condensation reaction in the film before the forming the pattern.

Abstract: A communication system includes gateways and a network server. Each gateway includes a data transmission/reception unit that transmits data to a base station, a connectivity confirmation unit that transmits a result of confirming connectivity with another gateway to the network server, a data transfer unit that transfers data to an unspecified gateway when a communication failure occurs, and a hopping communication unit that processes transfer data based on a hopping rule. The network server includes a data reception unit, a connectivity confirmation result reception unit, and a hopping rule distribution unit that generates and distributes the hopping rule based on a criterion for giving a priority to a transfer from the gateway camping on a different base station.

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, performing a treatment of decreasing a polarity of the base film when the polarity of the base film is higher than a polarity of the resist solution, and performing a treatment of increasing the polarity of the base film when the polarity of the base film is lower than the polarity of the resist solution.

Abstract: A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Abstract: A film forming system is to form an organic film on a substrate having a pattern formed on a surface thereof, includes: an organic film formation section configured to perform an organic film formation treatment on the substrate to form the organic film on the substrate; a film thickness measurement section configured to measure a film thickness of the organic film on the substrate; and an ultraviolet treatment section configured to perform an ultraviolet irradiation treatment on the organic film on the substrate to remove a surface of the organic film. In the film forming system, the organic film formation section, the film thickness measurement section, and the ultraviolet treatment section are disposed side by side in this order along a transfer direction of the substrate.

Abstract: A film forming system is to form an organic film on a substrate having a pattern formed on a surface thereof, includes: an organic film formation section configured to perform an organic film formation treatment on the substrate to form the organic film on the substrate; a film thickness measurement section configured to measure a film thickness of the organic film on the substrate; and an ultraviolet treatment section configured to perform an ultraviolet irradiation treatment on the organic film on the substrate to remove a surface of the organic film. In the film forming system, the organic film formation section, the film thickness measurement section, and the ultraviolet treatment section are disposed side by side in this order along a transfer direction of the substrate.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Abstract: In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.

Abstract: To appropriately form a metal-containing film containing metal on a substrate, a method first forms an organic film on the substrate, and causes a treatment agent to enter the organic film and causes metal to infiltrate the organic film via the treatment agent, thereby forming the metal-containing film. The metal-containing film contains metal and thus has a high etching selection ratio that is originally required performance. This makes it possible to appropriately form the metal-containing film having a high etching selection ratio on the substrate.

Abstract: The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract: The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

Abstract: In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.

Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.