Abstract: An organic light emitting device including, in sequence, a first electrode, a first charge transport layer, a second charge transport layer in contact with the first charge transport layer, a light emitting layer in contact with the second charge transport layer, and a second electrode, wherein the first charge transport layer includes a first material and a second material, the second charge transport layer includes the second material and a third material, and the light emitting layer includes the third material and a fourth material.

Abstract: An organic compound represented by formula [1]. In the formula rings Q represented by formula [1-1] are each independently present at positions *1 and *2 such that positions * of the rings Q correspond to the positions *1 and *2. The rings Q may be the same or different. R4 and R5 represent groups each independently selected from the group consisting of a hydrogen atom and a substituted or unsubstituted aryl group. The rings Q are aromatic hydrocarbons. R1 to R3 represent groups each independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, and a cyano group. At least one of R1 to R3 represents a cyano group.

Abstract: A cubic boron nitride sintered material comprising cubic boron nitride grains, a binder phase, and a void, in which a percentage of the cubic boron nitride grains based on the total of the cubic boron nitride grains and the binder phase is 40 vol % to 70 vol %, a percentage of the binder phase based on the total of the cubic boron nitride grains and the binder phase is 30 vol % to 60 vol %, the binder phase includes 10 vol % to 100 vol % of aluminum oxide grains, an average grain size of the aluminum oxide grains is 50 to 250 nm, the cubic boron nitride sintered material comprises 0.001 vol % to 0.100 vol % of one or more first voids, and at least one portion of each of the first voids is in contact with the aluminum oxide grains.

Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.

Abstract: An organic light emitting device including, in sequence, a first electrode, a first charge transport layer, a second charge transport layer in contact with the first charge transport layer, a light emitting layer in contact with the second charge transport layer, and a second electrode, wherein the first charge transport layer includes a first material and a second material, the second charge transport layer includes the second material and a third material, and the light emitting layer includes the third material and a fourth material.

Abstract: A direct-current power supply includes: a plurality of semiconductor devices each of which is a multiphase converter incorporating a plurality of semiconductor switching elements and a drive circuit to drive the plurality of semiconductor switching elements; a plurality of first parasitic inductances, each of which connects a reference potential terminal of the drive circuit and output N terminals of the semiconductor switching elements, in the plurality of semiconductor devices; a smoothing capacitor; and an inverter.

Abstract: A medium-discharging device includes: a medium-discharging section that discharges a medium; a medium-receiving tray that receives the medium discharged by the medium-discharging section; a light-emitting section that emits light to the medium-receiving tray; and a control section that controls the light-emitting section, in which the medium-receiving tray is configured to switch between a first state in which the medium-receiving tray is stored in an apparatus main body that includes the medium-discharging section and a second state in which the medium-receiving tray protrudes from the apparatus main body, and the control section controls the light-emitting section in accordance with a state or operation of the medium-receiving tray.

Abstract: A semiconductor memory device includes a stack structure including a plurality of layers vertically stacked on a substrate. Each of the plurality of layers includes a first dielectric layer, a semiconductor layer, and a second dielectric layer that are sequentially stacked, and a first conductive line in the second dielectric layer and extending in a first direction. The device also includes a second conductive line extending vertically through the stack structure, and a capacitor in the stack structure and spaced apart from the second conductive line. The semiconductor layer includes semiconductor patterns extending in a second direction intersecting the first direction between the first conductive line and the substrate. The second conductive line is between a pair of the semiconductor patterns adjacent to each other in the first direction. An end of each of the semiconductor patterns is electrically connected to a first electrode of the capacitor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including alternating gate electrodes and insulating layers stacked along a first direction, a vertical opening through the stack structure along the first direction, the vertical opening including a channel structure having a semiconductor layer on an inner sidewall of the vertical opening, and a variable resistive material on the semiconductor layer, a vacancy concentration in the variable resistive material varies along its width to have a higher concentration closer to a center of the channel structure than to the semiconductor layer, and an impurity region on the substrate, the semiconductor layer contacting the impurity region at a bottom of the channel structure.

Abstract: A first object of the present invention is to provide a transfer film that is capable of forming a resist pattern having excellent resolution. In addition, a second object of the present invention is to provide a transfer film that is capable of forming a resin pattern having excellent planarity. Further, a third object of the present invention is to provide a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device, using the above-described transfer film.

Abstract: Provided is a semiconductor memory device. The semiconductor memory device comprises a first semiconductor pattern including a first impurity region, a second impurity region, and a channel region, the first impurity region spaced apart from a substrate in a first direction and having a first conductivity type, the second impurity region having a second conductivity type different from the first conductivity type, and the channel region between the first impurity region and the second impurity region, a first conductive connection line connected to the first impurity region and extending in a second direction different from the first direction and a first gate structure extending in the first direction and including a first gate electrode and a first gate insulating film, wherein the first gate electrode penetrates the channel region and the first gate insulating film is between the first gate electrode and the semiconductor pattern.

Abstract: The present invention provides a transfer film in which a pattern appearance defect is unlikely to occur, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device. The transfer film of the present invention includes a temporary support a resin composition layer disposed on the temporary support, in which the resin composition layer contains a resin, and at least one compound selected from the group consisting of a block copolymer, which contains a block consisting of a constitutional unit X having a group represented by Formula (A) or a group represented by Formula (B) and a block a constitutional unit Y having a poly(oxyalkylene) group, and a compound represented by Formula (1).

Abstract: An apparatus, system, and method of remotely monitoring receives, from an operation terminal, identification information and location information of a location of one or more lamps, stores, in a memory, the received identification information and the received location information in association with each other for the one or more lamps, updates log information regarding a log of a lighting condition of the one or more lamps, in response to an indication that an electric circuit of the one or more lamps is energized for the one or more lamps, and sends monitoring information corresponding to the log information of the electric circuit of the one or more lamps for display.

Abstract: An object of the present invention is to provide a composition having excellent coatability. In addition, another object of the present invention is to provide a composition, a transfer film, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and an electronic device, which are related to the composition. A composition of the present invention contains an alkali-soluble resin, a polymerizable compound, and a compound A. The compound A is a compound having a group represented by General Formula (1). General Formula (1): *—CF2—H In the formula, * represents a bonding position.

Abstract: A first object of the present invention is to provide a composition having excellent coatability. In addition, a second object of the present invention is to provide a composition, a transfer film, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and an electronic device, which are related to the composition. A composition of the present invention includes a compound A having one or more specific structures selected from the group consisting of (a), (b), and (c), and a resin.

Abstract: A semiconductor memory device may include a first electrode and a second electrode, which are spaced apart from each other in a first direction, and a first semiconductor pattern, which is in contact with both of the first and second electrodes. The first semiconductor pattern may include first to fourth sub-semiconductor patterns, which are sequentially disposed in the first direction. The first and fourth sub-semiconductor patterns may be in contact with the first and second electrodes, respectively. The first and third sub-semiconductor patterns may be of a first conductivity type, and the second and fourth sub-semiconductor patterns may be of a second conductivity type different from the first conductivity type. Each of the first to fourth sub-semiconductor patterns may include a transition metal and a chalcogen element.

Abstract: Provided is a photosensitive composition including: a polymer (P) which includes a structural unit derived from a vinylbenzene derivative, a structural unit including a radical polymerizable group, and a structural unit including at least one kind of functional group selected from the group consisting of a primary hydroxyl group and an amino group, and in which the content of the structural unit derived from the vinylbenzene derivative is equal to or greater than 30% by mol; and a radical polymerization initiator.