Abstract: A power amplifier circuit includes a first transistor having a first terminal to which a first signal inputs, a second transistor having a first terminal to which the first signal inputs, a first resistor having a first end to which a first bias current is supplied and a second end electrically connected to the first terminal of the first transistor, a second resistor having a first end to which a second bias current is supplied and a second end electrically connected to the first terminal of the second transistor, and a third resistor having a first end connected to the first end of the first resistor and a second end connected to the first end of the second resistor.

Abstract: A first authentication apparatus executes authentication of a person captured in an input image by comparing face feature information of the person being acquired from an input image, with registered face feature information in a first watchlist. A second authentication apparatus executes authentication of a person unauthenticated with the first watchlist by comparing face feature information of the face feature information for which matching registered face feature information does not exist in the first watchlist, with registered face feature information in a second watchlist. A host server includes a watchlist updating unit that updates registered face feature information in the first watchlist and registered face feature information in the second watchlist, based on at least one of a priority degree for each piece of registered face feature information in the first watchlist and a priority degree for each piece of registered face feature information in the second watchlist.

Abstract: A plasma processing apparatus includes a chamber having a space therein and configured to process a target object loaded into the space by plasma generated in the space; a gas supply unit configured to supply a processing gas into the space of the chamber; a high frequency antenna having a plurality of lines adjacent to each other and configured to generate the plasma in the space by an induced electric field generated in the space by a current flowing in the lines; and a plurality of holders configured to hold the lines of the high frequency antenna. The holders are arranged on the respective lines of the high frequency antenna such that the adjacent holders are spaced from each other by a gap of a predetermined distance or more.

Abstract: A plasma processing apparatus includes a chamber having a space therein and configured to process a target object loaded into the space by plasma generated in the space; a gas supply unit configured to supply a processing gas into the space of the chamber; a high frequency antenna having a plurality of lines adjacent to each other and configured to generate the plasma in the space by an induced electric field generated in the space by a current flowing in the lines; and a plurality of holders configured to hold the lines of the high frequency antenna. The holders are arranged on the respective lines of the high frequency antenna such that the adjacent holders are spaced from each other by a gap of a predetermined distance or more.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming, over a main surface the semiconductor substrate, a first insulating film, forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component, patterning the Al-containing conductive film to form a pad, forming, over the first insulating film, a second insulating film to cover the pad therewith, forming an opening in the second insulating film, and electrically coupling a copper wire to the pad exposed from the opening.

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film.

Abstract: A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiO(1-x)Nx (where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract: A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiO(1-x)Nx (where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film.

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract: A capacitive element has improved electrical properties. The capacitive element is configured in a DRAM cell and has a lower electrode, a capacitive insulator film formed over the lower electrode, and an upper electrode formed over the capacitive insulator film. The upper electrode has a structure in which from the capacitive insulator film side of this electrode, a first upper electrode, a second upper electrode and a third upper electrode are stacked in turn. The third upper electrode is a tungsten film that may contain an impurity. Between the first and third upper electrodes, the second upper electrode is interposed which is a barrier film for preventing the possible impurity in the third upper electrode from diffusing into the capacitive insulator film.

Abstract: A limiter is connected to an accumulator leg near a first header collection pipe in an outdoor unit. The limiter extends from the accumulator leg toward the first header collection pipe to limit movement of the first header collection pipe.

Abstract: An outdoor unit a refrigeration apparatus includes an aluminum or aluminum alloy heat exchanger, an aluminum or aluminum alloy bracket having a securing portion attached directly to the heat exchanger and a fixing portion with a through hole used to fix the bracket to a non-aluminum metal structural part, a non-metal component interposed between the fixing portion of the bracket and the structural part to create a non-contact state, a non-aluminum metal anchoring part, and an anchored structure cooperating with the anchoring part to fasten a fixing portion of the bracket to the structural part via the non-metal component. The anchoring part has an outer shape smaller than the through hole in the fixing portion. The non-metal component maintains, in astute in which the anchoring part is passing through the through hole in the fixing portion, a non-contact state between the bracket and the anchoring part.

Abstract: An outdoor unit of a refrigeration apparatus includes a heat exchanger constructed of aluminum or aluminum alloy, a floor frame supporting the heat exchanger, and a spacer disposed between the heat exchanger and the floor frame. The heat exchanger has a plurality of flat pipes, a header manifold connected to the flat pipes, and a plurality of fins joined to the flat pipes. Heat exchange occurs between a fluid flowing inside the flat pipes and air flowing outside the flat pipes. The spacer has an inclined surface and a horizontal surface. The inclined surface guides condensation from the heat exchanger to the floor frame. The horizontal surface contacts the heat exchanger and the heat exchanger is horizontally mounted on the horizontal surface.

Abstract: The present invention provides a polarizing plate excellent in adherence (particularly, under high-temperature and high-humidity conditions) between a polarizer and a protective film. The polarizing plate of the present invention includes: a polarizer; an adhesive layer; an easy-adhesion layer formed of an easy-adhesive composition containing a urethane resin having a carboxyl group and a cross-linking agent; and a protective film containing a (meth)acrylic resin.

Abstract: The present invention provides a polarizing plate excellent in adherence (particularly, under high-temperature and high-humidity conditions) between a polarizer and a protective film. The polarizing plate of the present invention includes: a polarizer; an adhesive layer; an easy-adhesion layer formed of an easy-adhesive composition containing a urethane resin having a carboxyl group and a cross-linking agent; and a protective film containing a (meth) acrylic resin.

Abstract: A motor driving system for a brushless motor is comprised of a drive magnet, a rotor provided with the drive magnet and supported by the shaft, 3-phase stator coils provided on a substrate and facing to the drive magnet, two Hall elements exposed to magnetic fluxes of the drive magnet and outputting Hall signals having a 120 degrees phase difference, an amplitude control device for equalizing an amplitude difference between the Hall signals and outputting equalized Hall signals, a signal compounding device for compounding the equalized Hall signals and outputting a compound signal, a drive circuit for switching drive currents to be supplied to the 3-phase stator coils in response to the equalized Hall signals and the compound signal.

Abstract: A dehumidifying apparatus with an electronic refrigeration unit includes a thermoelectric unit, a DC power source, and absorbing and liberating heat exchangers. The thermoelectric unit includes a plurality of N-type thermoelectric elements, heat absorbing electrodes, P-type thermoelectric elements, and heat liberating electrodes electrically connected in series. The DC power source supplies DC current to the N-type and P-type thermoelectric elements serially connected through the heat absorbing and heat liberating electrodes. The absorbing and liberating heat exchanger are integrated with the heat absorbing and liberating electrodes, respectively. A heat liberating surface of the liberating heat exchanger is formed at a position different from the absorbing heat exchanger. The absorbing and liberating heat exchangers include heat absorbing and liberating fins, respectively. A notch is formed in one side of each of the heat liberating fins so that a part of a heat absorbing fin fits the notch.