Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: Disclosed herein is a semiconductor laser element capable of suppressing a wavelength dependency of a reflection ratio. A reflective film of the semiconductor laser element includes an L1 layer arranged at a first position from the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering a plurality of pairs of an L2N layer and an L2N+1 layer. The L2N layer has a refractive index of n2, and the L2N+1 layer has a refractive index of n3, where n2<n3. The L1 layer has a linear expansion coefficient of ±30% with respect to a linear expansion coefficient of the substrate and is made of a film having an optical film thickness thinner than ?/4. An L2 layer arranged at a second position from the end faces of the resonator is made of a film having an optical film thickness thinner than ?/4.

Abstract: Provided are: a sheet of colloidal crystals immobilized in resin exhibiting intense structural color, enabled to be observed easily from a squarely facing direction against a surface; and use thereof. The sheet of the present invention, assuming a direction perpendicular to part of a surface of a target area including partially the sheet surface is set as a specified axis, satisfies: (1) The target area includes plural inclined back-reflecting crystal-domains crystal domains having colloid particles immobilized in resin and including crystal lattice planes capable of Bragg-back reflecting at least some of components in a visible wavelength range of incident light having greater than 0 incident angle with the specified axis; and (2) By defining an azimuth angle around the specified axis, the inclined back-reflecting crystal-domains are so oriented that intensity of reflected light caused by Bragg back reflection varies depending on the azimuth angle of the incident light.

Abstract: A sheet of colloidal crystals immobilized in resin exhibiting intense structural color and allowing easy observation thereof from squarely facing direction against the surface; and application thereof are provided. The sheet includes crystal domains comprising colloidal crystals immobilized in resin. The Bragg reflection intensity resulting from crystal domains according to back reflection spectrum measurement to the sheet surface satisfies the following conditions (1) and (2). (1) When elevation angle from the sheet surface is in a range of at least 60° and less than 90° and measurement is performed at a predetermined azimuth angle on the sheet surface, intensity is not 0 and (2) when elevation angle from the sheet surface is in the range of at least 60° and less than 90° and azimuth dependency on the sheet surface is measured, the intensity exhibits a maximum value at the predetermined azimuth angle.

Abstract: Disclosed herein is a semiconductor laser element capable of suppressing a wavelength dependency of a reflection ratio. A reflective film of the semiconductor laser element includes an L1 layer arranged at a first position from the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering a plurality of pairs of an L2N layer and an L2N+1 layer. The L2N layer has a refractive index of n2, and the L2N+1 layer has a refractive index of n3, where n2<n3. The L1 layer has a linear expansion coefficient of ±30% with respect to a linear expansion coefficient of the substrate and is made of a film having an optical film thickness thinner than ?/4. An L2 layer arranged at a second position from the end faces of the resonator is made of a film having an optical film thickness thinner than ?/4.

Abstract: An epoxy resin composition is provided which includes a polycrystalline structure comprised of a plurality of monocrystalline structures. The plurality of monocrystalline structures are respectively comprised of a plurality of silicon oxide colloidal particles regularly aligned in epoxy resin. The plurality of silicon oxide colloidal particles are not contacted with each other. The mean distance between the silicon oxide colloidal particles adjacent to each other is less than 330 nm. The mean particle size of the plurality of silicon oxide colloidal particles is less than 290 nm. The concentration of the plurality of silicon oxide colloidal particles is 10-50% by mass. A relative permittivity of 4 or more is ensured. A method for producing the epoxy resin composition is provided. Building materials, ornaments and optical materials, each using the epoxy resin composition, are also provided.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1?x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1?xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1?xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: Provided are: a sheet of colloidal crystals immobilized in resin exhibiting intense structural color, enabled to be observed easily from a squarely facing direction against a surface; and use thereof. The sheet of the present invention, assuming a direction perpendicular to part of a surface of a target area including partially the sheet surface is set as a specified axis, satisfies: (1) The target area includes plural inclined back-reflecting crystal-domains crystal domains having colloid particles immobilized in resin and including crystal lattice planes capable of Bragg-back reflecting at least some of components in a visible wavelength range of incident light having greater than 0 incident angle with the specified axis; and (2) By defining an azimuth angle around the specified axis, the inclined back-reflecting crystal-domains are so oriented that intensity of reflected light caused by Bragg back reflection varies depending on the azimuth angle of the incident light.

Abstract: A sheet of colloidal crystals immobilized in resin exhibiting intense structural color and allowing easy observation thereof from squarely facing direction against the surface; and application thereof are provided. The sheet includes crystal domains comprising colloidal crystals immobilized in resin. The Bragg reflection intensity resulting from crystal domains according to back reflection spectrum measurement to the sheet surface satisfies the following conditions (1) and (2). (1) When elevation angle from the sheet surface is in a range of at least 60° and less than 90° and measurement is performed at a predetermined azimuth angle on the sheet surface, intensity is not 0 and (2) when elevation angle from the sheet surface is in the range of at least 60° and less than 90° and azimuth dependency on the sheet surface is measured, the intensity exhibits a maximum value at the predetermined azimuth angle.

Abstract: The present invention provides an acrylic resin composition containing a polycrystal of colloidal particles of silicon oxide in an acrylic resin that is formed by curing an acrylic monomer liquid at room temperature and/or an acrylic oligomer liquid at room temperature, wherein a mean distance between the colloidal particles in the polycrystal is 140 to 330 nm. The size of the single crystal that constitutes the polycrystal can be controlled by adjusting the content of silicon oxide and/or the additive amount of impurities. An architectural material, a fashion accessory, and an optical material are provided that are formed by using the acrylic resin composition.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxGa1-x)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: An epoxy resin composition is provided which includes a polycrystalline structure comprised of a plurality of monocrystalline structures. The plurality of monocrystalline structures are respectively comprised of a plurality of silicon oxide colloidal particles regularly aligned in epoxy resin. The plurality of silicon oxide colloidal particles are not contacted with each other. The mean distance between the silicon oxide colloidal particles adjacent to each other is less than 330 nm. The mean particle size of the plurality of silicon oxide colloidal particles is less than 290 nm. The concentration of the plurality of silicon oxide colloidal particles is 10-50% by mass. A relative permittivity of 4 or more is ensured. A method for producing the epoxy resin composition is provided. Building materials, ornaments and optical materials, each using the epoxy resin composition, are also provided.

Abstract: A hollow fiber membrane is produced through a thermally induced phase separation process by dissolving a highly hydrophilic polyamide resin in a high-boiling-point solvent such as an aprotic polar solvent at a temperature of not lower than 100° C. The hollow fiber membrane has a membrane surface having a water contact angle of not greater than 80 degrees, and has a water permeability of not less than 100 L/m2·atm·h and a 0.1-?m particle rejection percentage of not less than 90%.

Abstract: The present invention provides an acrylic resin composition containing a polycrystal of colloidal particles of silicon oxide in an acrylic resin that is formed by curing an acrylic monomer liquid at room temperature and/or an acrylic oligomer liquid at room temperature, wherein a mean distance between the colloidal particles in the polycrystal is 140 to 330 nm. The size of the single crystal that constitutes the polycrystal can be controlled by adjusting the content of silicon oxide and/or the additive amount of impurities. An architectural material, a fashion accessory, and an optical material are provided that are formed by using the acrylic resin composition.

Abstract: A hollow fiber membrane is produced through a thermally induced phase separation process by dissolving a highly hydrophilic polyamide resin in a high-boiling-point solvent such as an aprotic polar solvent at a temperature of not lower than 100° C. The hollow fiber membrane has a membrane surface having a water contact angle of not greater than 80 degrees, and has a water permeability of not less than 100 L/m2·atm·h and a 0.1-?m particle rejection percentage of not less than 90%.

Abstract: A semiconductor laser diode device with small driving current and no distortion in the projected image.

Abstract: A semiconductor laser diode device with small driving current and no distortion in the projected image.

Abstract: In a recording/reproducing apparatus using a hard disk drive (HDD), a connection confirmation/processing program (program for confirming connection with an external equipment and conducting processing required for that connection) which can be executed during starting time of the HDD is stored in a non-volatile memory (e.g., flash memory) of a microcomputer, and a recording/reproduction control program which cannot be executed until the HDD becomes accessible and is greatly affected by extension of the functions and modification of the specification is stored in the HDD.

Abstract: In a recording/reproducing apparatus using a hard disk drive (HDD), a connection confirmation/processing program (program for confirming connection with an external equipment and conducting processing required for that connection) which can be executed during starting time of the HDD is stored in a non-volatile memory (e.g., flash memory) of a microcomputer, and a recording/reproduction control program which cannot be executed until the HDD becomes accessible and is greatly affected by extension of the functions and modification of the specification is stored in the HDD.