Abstract: An electrochemical reaction device in an embodiment includes: an electrochemical reaction cell including a first accommodation part for accommodating carbon dioxide, a second accommodation part for accommodating an electrolytic solution containing water, or water vapor, a diaphragm provided between the first accommodation part and the second accommodation part, a reduction electrode arranged in the first accommodation part, and an oxidation electrode arranged in the second accommodation part, a detection unit detecting a reaction amount in the electrochemical reaction cell; a regulation unit regulating an amount of the carbon dioxide to be supplied to the first accommodation part, and a control unit controlling the regulation unit based on a detection signal of the detection unit.

Abstract: An electrolytic device includes: an electrolysis cell including: an anode; a cathode; a first flow path plate facing on the anode, the first flow path plate having a first recess defining an anode flow path through which a first liquid flows; a second flow path plate facing on the cathode, the second flow path plate having a second recess defining a cathode flow path through which a first gas flows; and a separator provided between the anode and the cathode. The second flow path plate has an uneven surface on an inner surface of the second recess. An arithmetic mean roughness of the uneven surface is 0.03 ?m or more and 50 ?m or less.

Abstract: An electrochemical reaction device in an embodiment includes: a reaction unit including a first accommodation part to accommodate carbon dioxide and a second accommodation part to accommodate an electrolytic solution containing water; a reduction electrode to reduce the carbon dioxide; an oxidation electrode to oxidize the water; a power supply to pass current between the reduction electrode and the oxidation electrode; a pressure regulator to regulate a pressure in the first accommodation part; a reaction product detector to detect at least one of an amount and a kind of a substance produced at the reduction electrode; and a controller to control the pressure regulator based on a detection signal of the reaction product detector.

Abstract: An electrolysis device of an embodiment includes: an electrolysis cell including a cathode part in which a reduction electrode is disposed, an anode part in which an oxidation electrode is disposed, and a diaphragm provided between the cathode part and the anode part; a supply power property obtaining unit that obtains a property of power that is to be supplied to the electrolysis cell; an input gas property obtaining unit that obtains a property of a gas that is to be input to the electrolysis cell; an electric property obtaining unit that obtains an electric property of the electrolysis cell; an output gas property obtaining unit that obtains a property of an output gas of the electrolysis cell; a temperature obtaining unit that obtains a temperature of the electrolysis cell; a data storage unit that stores data from the obtaining units; and a data processing unit to which the data is sent from the data storage unit and that processes the data to determine a state of the electrolysis cell.

Abstract: A diaphragm pump includes a piezoelectric member, a diaphragm having surfaces, and a supporting member. The piezoelectric member deforms when a voltage is applied. The diaphragm deforms in response to deformation of the piezoelectric member. The supporting member supports the diaphragm. A space is formed between the diaphragm and the supporting member. Fluid is made to flow by changing a volume of the space by deforming the diaphragm. The surfaces of the diaphragm face the space and include a first surface that deforms in response to deformation of the piezoelectric member and include a second surface not connected to the first surface. The diaphragm bonds to the supporting member with the second surface.

Abstract: An element substrate is bonded to a support substrate with high positional accuracy. A manufacturing method of the liquid ejecting head includes curing a first adhesive, which is in contact with an element substrate and a support substrate, at a first temperature to perform first temporary fixing, heating a second adhesive, which is in contact with the element substrate and the support substrate, to a second temperature higher than the first temperature so as to cure the second adhesive and perform second temporary fixing and heating a third adhesive, which is in contact with the element substrate and the support substrate, to a third temperature higher than the second temperature so as to cure the third adhesive and bond the element substrate to the support substrate. An elastic modulus of the second adhesive is larger than an elastic modulus of the first adhesive at the second temperature.

Abstract: An inkjet recording method of the present disclosure is an inkjet recording method of recording an image on a recording medium using an aqueous ink. Coating wax on a transfer body; applying an aqueous reaction solution containing a reaction agent reacting with the aqueous ink to the transfer body; forming an intermediate image by applying the aqueous ink to the transfer body; and transferring the intermediate image by bringing the intermediate image into contact with the recording medium are included in this order, and a surface temperature Ta (° C.) of the transfer body at a position where the intermediate image contacts the recording medium, a surface temperature Tb (° C.) of the transfer body at a position where the intermediate image is separated from the transfer body and a melting point Tm (° C.) of the wax satisfy a relationship of Tb<Tm?Ta.

Abstract: An ink jet recording method is capable of suppressing generation of image streaks and recording a high-quality image when using a recording apparatus equipped with a line head. The ink jet recording method records an image on a recording medium by using an ink jet recording apparatus equipped with a line head. In this method, the line head has a plurality of recording element substrates each having a nozzle array made up of a plurality of nozzles which eject an aqueous ink. The recording element substrates are arranged in a predetermined direction. An average temperature Te (° C.) of the aqueous ink ejected from terminal-portion nozzles constituting the terminal portions of the nozzle arrays and an average temperature Tc (° C.) of the aqueous ink ejected from center-portion nozzles constituting the center portions of the nozzle arrays satisfy the following relationship: Te>Tc.

Abstract: An element substrate is bonded to a support substrate with high positional accuracy. A manufacturing method of the liquid ejecting head includes curing a first adhesive, which is in contact with an element substrate and a support substrate, at a first temperature to perform first temporary fixing, heating a second adhesive, which is in contact with the element substrate and the support substrate, to a second temperature higher than the first temperature so as to cure the second adhesive and perform second temporary fixing and heating a third adhesive, which is in contact with the element substrate and the support substrate, to a third temperature higher than the second temperature so as to cure the third adhesive and bond the element substrate to the support substrate. An elastic modulus of the second adhesive is larger than an elastic modulus of the first adhesive at the second temperature.

Abstract: A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

Abstract: An ink jet recording method uses an ink jet recording apparatus equipped with a line head that includes a plurality of recording element substrates each having a nozzle array comprised of a plurality of nozzles, which eject an aqueous ink, arranged in a predetermined direction. The recording element substrates are arranged in the predetermined direction such that each of the recording element substrates constitutes an overlapping portion at which a terminal portion of the recording element substrate is overlapped with a terminal portion of an adjacent recording element substrate in the predetermined direction. The method includes setting the average temperature To (° C.) of an ink ejected from overlapping-portion nozzles included in the overlapping portion of the nozzle array and the average temperature Tc (° C.) of an ink ejected from the center-portion nozzle included in the center portion of the nozzle array so as to satisfy the relationship Tc>To.

Abstract: An ink jet recording method by using an ink jet recording apparatus equipped with a line head, wherein the line head includes a plurality of recording element substrates each having a nozzle array comprised of a plurality of nozzles, which eject an aqueous ink, arranged in a predetermined direction, the recording element substrates are arranged in the predetermined direction such that the recording element substrate constitutes an overlapping portion at which the terminal portion of the recording element substrates is overlapped with the terminal portion of adjacent recording element substrate in the predetermined direction, and the average temperature To (° C.) of an ink ejected from overlapping-portion nozzles included in the overlapping portion of the nozzle array and the average temperature Tc (° C.) of an ink ejected from the center-portion nozzle included in the center portion of the nozzle array satisfy the relationship Tc>To.

Abstract: To provide an ink jet recording method capable of suppressing generation of image streaks and recording a high-quality image, when using a recording apparatus equipped with a line head. Provided is an ink jet recording method which records an image on a recording medium by using an ink jet recording apparatus equipped with a line head. In this method, the line head has a plurality of recording element substrates each having a nozzle array made up of a plurality of nozzles which eject an aqueous ink. The recording element substrates are arranged in the predetermined direction. An average temperature Te (° C.) of an aqueous ink ejected from terminal-portion nozzles constituting the terminal portion of the nozzle array and an average temperature Tc (° C.) of an aqueous ink ejected from center-portion nozzles constituting the center portion of the nozzle array satisfy the following relationship: Te>Tc.

Abstract: A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: An aqueous ink for ink jet contains a self-dispersible pigment in which a first functional group including a phosphonic acid group and a second functional group including at least one of a carboxylic acid group and a sulfonic acid group are bonded to a particle surface, wherein a surface charge amount derived from the phosphonic acid group included in the above-described first functional group is 0.3 micromoles/m2 or more, a total surface charge amount derived from the carboxylic acid group and the sulfonic acid group included in the above-described second functional group is 1.0 micromoles/m2 or more, and a total surface charge amount derived from anionic groups included in the above-described first functional group and the above-described second functional group is 2.0 micromoles/m2 or more and 8.0 micromoles/m2 or less.

Abstract: Provided is a lithium ion secondary battery having a large energy density and an improved capacity retention rate after repeated use even under high voltage application (cycle characteristics), and excellent in safety. A lithium ion secondary battery containing a negative electrode for reversibly intercalating and deintercalating lithium ions, a positive electrode containing lithium vanadium phosphate, and a non-aqueous electrolytic solution containing lithium fluoroethyl phosphate as an electrolyte can be obtained.

Abstract: A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.

Abstract: The present invention provides an ink jet ink that is capable of recording an image excellent in light resistance and ozone resistance and has excellent intermittent ejection stability. The ink jet ink contains a coloring material and a water-soluble organic solvent. The coloring material contains a compound represented by the following general formula (I), the water-soluble organic solvent contains ethylene urea end an alkanediol having 4 to 6 carbon atoms, and a content A (% by mass) of the coloring material, a content B (% by mass) of the ethylene urea and a content C (% by mass) of the alkanediol having 4 to 6 carbon atoms based on a total mass of the ink satisfy relationships of 0.20?B/A?10.0 and 0.10?C/A?10.0.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.