Patents by Inventor Satoshi Maemori
Satoshi Maemori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9012125Abstract: A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.Type: GrantFiled: January 4, 2012Date of Patent: April 21, 2015Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Shinji Kumada, Satoshi Maemori, Masatoshi Arai, Daiju Shiono
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Patent number: 8349549Abstract: Provided are: a resist surface modifying liquid which is used as a surface treatment liquid of a resist film prior to a post exposure baking (PEB) step, and which can inhibit occurrence of defects of the resist film by reducing water repellency; and a method for forming a resist pattern using the same. A resist surface modifying liquid which is used as a surface treatment liquid prior to a post exposure baking (PEB) step of a resist film, the resist surface modifying liquid containing an acidic compound, and at least one of an alcohol-based solvent represented by a certain general formula and an ether-based solvent represented by a certain general formula.Type: GrantFiled: November 24, 2009Date of Patent: January 8, 2013Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Satoshi Maemori, Tomoya Kumagai
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Publication number: 20120196226Abstract: A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.Type: ApplicationFiled: January 4, 2012Publication date: August 2, 2012Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Shinji Kumada, Satoshi Maemori, Masatoshi Arai, Daiju Shiono
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Publication number: 20100151395Abstract: Disclosed are a protective film-removing solvent for re-moving a protective film laminated on a photoresist film, which contains at least a hydrofluoroether; and a method of photoresist patterning in liquid immersion lithography, using the protective film-removing solvent.Type: ApplicationFiled: February 16, 2010Publication date: June 17, 2010Inventors: Keita Ishiduka, Masaaki Yoshida, Satoshi Maemori
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Publication number: 20100129758Abstract: Provided are: a resist surface modifying liquid which is used as a surface treatment liquid of a resist film prior to a post exposure baking (PEB) step, and which can inhibit occurrence of defects of the resist film by reducing water repellency; and a method for forming a resist pattern using the same. A resist surface modifying liquid which is used as a surface treatment liquid prior to a post exposure baking (PEB) step of a resist film, the resist surface modifying liquid containing an acidic compound, and at least one of an alcohol-based solvent represented by a certain general formula and an ether-based solvent represented by a certain general formula.Type: ApplicationFiled: November 24, 2009Publication date: May 27, 2010Inventors: Satoshi Maemori, Tomoya Kumagai
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Patent number: 7629105Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid gType: GrantFiled: September 17, 2004Date of Patent: December 8, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Akiyoshi Yamazaki, Kazuo Tani, Naoto Motoike, Satoshi Maemori, Sachiko Yoshizawa
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Publication number: 20070122744Abstract: The invention discloses a chemical-amplification positive-working photoresist composition in the form of a solution which is particularly suitable for the formation, on the surface of a substrate, of a photoresist layer having a thickness of 100 to 650 nm to be in compliance with the trend toward increasing fineness of photolithographic patterning in the manufacture of semiconductor devices. The photoresist composition comprises an organic compound capable of generating an acid by exposure to actinic rays, and a film-forming resinous compound having acid-dissociable substituent groups and capable of being imparted with increased solubility in an aqueous alkaline solution by interacting with an acid and a surface active agent in an amount not exceeding 50 ppm by weight based on the resinous compound, optionally, in combination with a tertiary aliphatic amine compound and/or a carboxylic acid.Type: ApplicationFiled: December 26, 2006Publication date: May 31, 2007Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta
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Publication number: 20060210916Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid gType: ApplicationFiled: September 17, 2004Publication date: September 21, 2006Inventors: Akiyoshi Yamazaki, Kazuo Tani, Naoto Motoike, Satoshi Maemori, Sachiko Yoshizawa
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Patent number: 7094924Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.Type: GrantFiled: January 31, 2003Date of Patent: August 22, 2006Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Taku Nakao, Satoshi Maemori, Tatsuya Matsumi
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Patent number: 6818380Abstract: The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: GrantFiled: October 6, 2003Date of Patent: November 16, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Patent number: 6777158Abstract: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: GrantFiled: August 28, 2001Date of Patent: August 17, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Publication number: 20040072103Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivy, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.Type: ApplicationFiled: November 20, 2003Publication date: April 15, 2004Inventors: Kazufumi Sato, Satoshi Maemori, Taku Nakao, Kazuyuki Nitta
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Publication number: 20040067615Abstract: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: ApplicationFiled: October 6, 2003Publication date: April 8, 2004Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada
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Patent number: 6677103Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.Type: GrantFiled: April 3, 2002Date of Patent: January 13, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Satoshi Maemori, Taku Nakao, Kazuyuki Nitta
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Patent number: 6605417Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether)disulfonic acids.Type: GrantFiled: January 30, 2001Date of Patent: August 12, 2003Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Taku Nakao, Satoshi Maemori, Tatsuya Matsumi
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Publication number: 20030138736Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.Type: ApplicationFiled: January 31, 2003Publication date: July 24, 2003Inventors: Kazuyuki Nitta, Taku Nakao, Satoshi Maemori, Tatsuya Matsumi
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Patent number: 6444394Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.Type: GrantFiled: March 8, 2000Date of Patent: September 3, 2002Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Satoshi Maemori, Taku Nakao, Kazuyuki Nitta
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Publication number: 20020110750Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.Type: ApplicationFiled: April 3, 2002Publication date: August 15, 2002Inventors: Kazufumi Sato, Satoshi Maemori, Taku Nakao, Kazuyuki Nitta
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Publication number: 20020058202Abstract: The invention discloses a chemical-amplification positive-working photoresist composition in the form of a solution which is particularly suitable for the formation, on the surface of a substrate, of a photoresist layer having a thickness of 100 to 650 nm to be in compliance with the trend toward increasing fineness of photolithographic patterning in the manufacture of semiconductor devices. The photoresist composition comprises an organic compound capable of generating an acid by exposure to actinic rays, and a film-forming resinous compound having acid-dissociable substituent groups and capable of being imparted with increased solubility in an aqueous alkaline solution by interacting with an acid and a surface active agent in an amount not exceeding 50 ppm by weight based on the resinous compound, optionally, in combination with a tertiary aliphatic amine compound and/or a carboxylic acid.Type: ApplicationFiled: September 19, 2001Publication date: May 16, 2002Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta
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Publication number: 20020045133Abstract: The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.Type: ApplicationFiled: August 28, 2001Publication date: April 18, 2002Inventors: Satoshi Maemori, Kazufumi Sato, Kazuyuki Nitta, Katsumi Oomori, Kazuo Tani, Yohei Kinoshita, Tomotaka Yamada