Abstract: A plastic optical fiber for a medical device lighting decreases the cost of a lens and simplify the design of a lighting apparatus, wherein the plastic optical fiber for a medical device includes a core composed of a (co)polymer containing methyl methacrylate as a main component and is characterized by including a cladding material composed of a copolymer having a fluorine weight composition ratio of 60 to 74%, and by having a theoretical numerical aperture, NA, of 0.48 to 0.65 and, thus, the plastic optical fiber has a high numerical aperture and also has excellent translucency and flexibility.

Abstract: A plastic optical fiber is excellent in translucency, heat resistance, resistance to environment and the like, and has highly excellent flexibility. The plastic optical fiber contains a core and at least one layer of cladding, wherein the bending elastic modulus of the innermost layer of the cladding is 20 to 70 MPa, the glass transition temperature of the innermost layer of the cladding is 10° C. or lower, and the storage elastic modulus of the innermost layer of the cladding at 30° C. is 1×106 Pa to 4×107 Pa.

Abstract: A plastic optical fiber is excellent in translucency, heat resistance, resistance to environment and the like, and has highly excellent flexibility. The plastic optical fiber contains a core and at least one layer of cladding, wherein the bending elastic modulus of the innermost layer of the cladding is 20 to 70 MPa, the glass transition temperature of the innermost layer of the cladding is 10° C. or lower, and the storage elastic modulus of the innermost layer of the cladding at 30° C. is 1×106 Pa to 4×107 Pa.

Abstract: A plastic optical fiber for a medical device lighting decreases the cost of a lens and simplify the design of a lighting apparatus, wherein the plastic optical fiber for a medical device includes a core composed of a (co)polymer containing methyl methacrylate as a main component and is characterized by including a cladding material composed of a copolymer having a fluorine weight composition ratio of 60 to 74%, and by having a theoretical numerical aperture, NA, of 0.48 to 0.65 and, thus, the plastic optical fiber has a high numerical aperture and also has excellent translucency and flexibility.

Abstract: A photosensitive conductive paste provides a coating film having good storage stability, is capable of maintaining high adhesion under relatively low temperature curing conditions, and is also capable of exhibiting high conductivity. The photosensitive conductive paste contains (A) conductive particles, (B) a photosensitie component, (C) a photopolymerization initiator and (D) an epoxy resin, wherein the epoxy resin (D) has an epoxy equivalent weight of 200-500 g/equivalent.

Abstract: A photosensitive conductive paste includes an epoxy acrylate (A) including a urethane bond, a photopolymerization initiator (B), and a conductive filler (C), wherein an added amount of the conductive filler (C) is 70 to 95% by weight with respect to the total solids in the photosensitive conductive paste.

Abstract: A photosensitive conductive paste includes a dicarboxylic acid or an acid anhydride thereof (A); a compound (B) having an acid value of 40 to 200 mg KOH/g; an alicyclic compound (C); a photopolymerization initiator (D); and a conductive filler (E).

Abstract: A photosensitive conductive paste includes an epoxy acrylate (A) including a urethane bond, a photopolymerization initiator (B), and a conductive filler (C), wherein an added amount of the conductive filler (C) is 70 to 95% by weight with respect to the total solids in the photosensitive conductive paste.

Abstract: A photosensitive conductive paste includes a dicarboxylic acid or an acid anhydride thereof (A); a compound (B) having an acid value of 40 to 200 mg KOH/g; an alicyclic compound (C); a photopolymerization initiator (D); and a conductive filler (E).

Abstract: A photosensitive conductive paste provides a coating film having good storage stability, is capable of maintaining high adhesion under relatively low temperature curing conditions, and is also capable of exhibiting high conductivity. The photosensitive conductive paste contains (A) conductive particles, (B) a photosensitive component, (C) a photopolymerization initiator and (D) an epoxy resin, wherein the epoxy resin (D) has an epoxy equivalent weight of 200-500 g/equivalent.

Abstract: Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support (15) includes one or more first sections (15a), and a second section (15b) surrounding the first sections (15a). Each first section (15a) includes a surface for supporting wafers (19) on which nitride semiconductor is deposited. In MOCVD tools (11) and (13), a wafer guide (17) is provided on the wafer-support (15) second section (15b). The wafer guide (17) is furnished with a protector (17a) for covering the second section (15b), and one or more openings (17b) for receiving the wafers (19) on the first sections (15a). The protector (17a) has lateral surfaces (17c) defining the openings (17b) and guiding the wafers (19), and receives a wafer (19) in each opening (17b). A wafer (19) is loaded onto the support surface of each wafer-support (15) first section (15a) exposed in that opening (17b).

Abstract: Disclosed is a photosensitive composition comprising to 5% by weight of a photosensitive organic component and 50 to 95% by weight of a glass powder, wherein the glass powder contains 70 to 85% by weight of Bi2O3, 3 to 15% by weight of SiO2, 5 to 20% by weight of B2O3, 0 to 3% by weight of ZrO2 and 1 to 10% by weight of ZnO, expressed in terms of oxide. The present invention provides a photosensitive composition which enables fine pattern work by photolithography to be used in various members of a flat panel display and a fluorescence emission tube.

Abstract: Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support (15) includes one or more first sections (15a), and a second section (15b) surrounding the first sections (15a). Each first section (15a) includes a surface for supporting wafers (19) on which nitride semiconductor is deposited. In MOCVD tools (11) and (13), a wafer guide (17) is provided on the wafer-support (15) second section (15b). The wafer guide (17) is furnished with a protector (17a) for covering the second section (15b), and one or more openings (17b) for receiving the wafers (19) on the first sections (15a). The protector (17a) has lateral surfaces (17c) defining the openings (17b) and guiding the wafers (19), and receives a wafer (19) in each opening (17b). A wafer (19) is loaded onto the support surface of each wafer-support (15) first section (15a) exposed in that opening (17b).