Abstract: An electron beam writing apparatus comprising, a cathode configured to emit an electron beam, a condition controller configured to change a condition under which the electron beam is emitted from the cathode in a plurality of ways, and a prediction unit configured to predict a life span of the cathode based on a temporal change in an amount of fluctuation of a beam characteristic of the electron beam to a change in the condition when the condition is changed.

Abstract: An electron beam writing apparatus comprising, a cathode configured to emit an electron beam, a condition controller configured to change a condition under which the electron beam is emitted from the cathode in a plurality of ways, and a prediction unit configured to predict a life span of the cathode based on a temporal change in an amount of fluctuation of a beam characteristic of the electron beam to a change in the condition when the condition is changed.

Abstract: A drawing apparatus includes: a drawing part; a cleaning-gas generator; a first valve between the cleaning-gas generator and the drawing part and adjusting a supply amount of gas to the drawing part; a first pressure gauge measuring a pressure in the drawing part; a compensation-gas introducing part introducing compensation-gas to be supplied between the cleaning-gas generator and the first valve; a second valve between the compensation-gas introducing part and the first valve and adjusting a supply amount of the compensation-gas; and a valve controller controlling the first and second valves, wherein the valve controller controls the first valve to supply the cleaning-gas at a predetermined flow rate to the drawing part and controls the second valve to cause a pressure in the drawing part to be a predetermined pressure when the first pressure gauge detects a pressure reduction due to a reduction in a supply flow rate of the cleaning-gas.

Abstract: A drawing apparatus includes: a drawing part; a cleaning-gas generator; a first valve between the cleaning-gas generator and the drawing part and adjusting a supply amount of gas to the drawing part; a first pressure gauge measuring a pressure in the drawing part; a compensation-gas introducing part introducing compensation-gas to be supplied between the cleaning-gas generator and the first valve; a second valve between the compensation-gas introducing part and the first valve and adjusting a supply amount of the compensation-gas; and a valve controller controlling the first and second valves, wherein the valve controller controls the first valve to supply the cleaning-gas at a predetermined flow rate to the drawing part and controls the second valve to cause a pressure in the drawing part to be a predetermined pressure when the first pressure gauge detects a pressure reduction due to a reduction in a supply flow rate of the cleaning-gas.

Abstract: A charged particle beam writing method includes determining whether a difference between one of the total area of a pattern and the number of shots in a stripe region with respect to one of adjacent stripe regions of the stripe regions and one of the total area and the number of shots with respect to the other of the adjacent stripe regions exceeds a threshold value, re-dividing, when the difference exceeds the threshold value, a stripe region where the total area or the number of shots is larger than that of the other stripe region in the adjacent stripe regions so that the difference of the total area or the number of shots becomes lower than or equal to the threshold value, and writing a pattern in the stripe regions including a re-divided stripe region, in the writing order of arrangement of the stripe regions.

Abstract: A charged particle beam writing method includes determining whether a difference between one of the total area of a pattern and the number of shots in a stripe region with respect to one of adjacent stripe regions of the stripe regions and one of the total area and the number of shots with respect to the other of the adjacent stripe regions exceeds a threshold value, re-dividing, when the difference exceeds the threshold value, a stripe region where the total area or the number of shots is larger than that of the other stripe region in the adjacent stripe regions so that the difference of the total area or the number of shots becomes lower than or equal to the threshold value, and writing a pattern in the stripe regions including a re-divided stripe region, in the writing order of arrangement of the stripe regions.

Abstract: A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern.

Abstract: A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern.