Abstract: An interconnect structure according to the present disclosure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: In this flat extruded aluminum multi-port tube, the corrosion-resistance, at inner surfaces of a plurality of flow passages independently and parallelly extending in the tube axial direction, is effectively enhanced. In a flat extruded aluminum multi-port tube 10 formed by an extrusion by employing an aluminum tube material and an aluminum sacrificial anode material having an electrochemically lower potential than the aluminum tube material, the aluminum sacrificial anode material is exposed to form a sacrificial anode portion 18 at least in a part of an inner circumferential portion in each of the plurality of flow passages 12.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.

Abstract: An imaging device includes: a semiconductor substrate including a first impurity region and a second impurity region; a first insulating layer on a portion of a surface of the semiconductor substrate; a second insulating layer on another portion of the surface of the semiconductor substrate, a thickness of the first insulating layer being greater than a thickness of the second insulating layer; a first transistor including: a first gate electrode facing the surface of the semiconductor substrate via the first insulating layer; the first impurity region as one of a source and a drain; and the second impurity region as the other of the source and the drain; and a photoelectric converter electrically connected to the first impurity region. The first insulating layer covers the first impurity region, and the second insulating layer covers the second impurity region.

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.

Abstract: Provided is a solar cell device and a manufacturing method thereof, whereby decrease in electricity generating efficiency of a solar cell, of which the manufacturing process includes a cutting processing, can be suppressed. The solar cell device includes a solar cell and a fluorescent light collector, and both ends of the solar cell along the long side are formed by dicing, at a second region where a minority carrier is generated, between a first electrode and a second electrode.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.

Abstract: A method for manufacturing a propeller shaft comprising: a shaft portion of a circular tube shape; and a joint assembly to be joined to a transfer gear box side or a differential gear box side of the shaft portion, the joint assembly comprising a shaft-side joint to be joined to the shaft portion and an other-member-side joint to be coupled to a transfer gear box or to a differential gear box, the method having: a press fitting step of pressing the shaft-side joint of the joint assembly into the shaft portion, in a state in which the shaft-side joint and the other-member-side joint have been assembled into the joint assembly; and a welding step of welding the shaft portion and the joint assembly, after the press fitting step.

Abstract: In an embodiment, photoelectric conversion units (10) each include a package (12) accommodating a photoelectric conversion device (11). The package (12) has a front surface (12a) having a window (13); and a side surface (12c). The package (12) includes a first coupling portion (14) protruding from the side surface (12c) in a first direction X parallel to a light incident surface (11a) of the photoelectric conversion device (11), and a second coupling portion (15) recessed from the side surface (12c) in the first direction X. The first coupling portion (14) includes a first terminal (16) electrically connected with the photoelectric conversion device (11), and the second coupling portion (15) includes a second terminal (17) electrically connected with the photoelectric conversion device (11). The first coupling portion (14) and the second coupling portion (15) have shapes and sizes matching each other, and are coupled with each other by fitting.

Abstract: A method for manufacturing a rear axle includes: a brake flange press-fitting step of press-fitting a brake flange to an outer peripheral surface of a rear axle housing; a brake flange welding step of welding the rear axle housing and the brake flange; an axle end press-fitting step of press-fitting an axle end to an inner peripheral surface of an end portion of the rear axle housing; and an axle end welding step of welding the rear axle housing and the axle end.

Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.

Abstract: In this flat extruded aluminum multi-port tube, the corrosion-resistance, at inner surfaces of a plurality of flow passages independently and parallelly extending in the tube axial direction, is effectively enhanced. In a flat extruded aluminum multi-port tube 10 formed by an extrusion by employing an aluminum tube material and an aluminum sacrificial anode material having an electrochemically lower potential than the aluminum tube material, the aluminum sacrificial anode material is exposed to form a sacrificial anode portion 18 at least in a part of an inner circumferential portion in each of the plurality of flow passages 12.

Abstract: Product related information desired by a customer is caused to be preferentially acquired by the customer even when a part of light incident on a POP advertisement is blocked by the customer. An information transmitting apparatus (1) includes a transmitting unit that transmits the product related information as a radio signal; a fluorescent concentrating plate (11) that emits fluorescent light upon reception of incident light from both surfaces of at least a front surface and a back surface and guides the fluorescent light; and a solar cell (13) that provides the transmitting unit with power generated upon reception of the fluorescent light. The fluorescent concentrating plate (11) functions as at least a part of a POP advertisement for a product and the solar cell (13) is arranged at an end of the fluorescent concentrating plate (11) so as to be able to receive the fluorescent light.

Abstract: A high visual effect is achieved while variation in electric current values among solar cells is suppressed. A fluorescent concentrating plate (2) provided in a fluorescent concentrator solar cell (11) according to an aspect of the invention includes a display portion (3) that includes a peripheral end surface (31) which emits a part of guided light to an outside to thereby perform light emission and a base portion (4) that includes an upper end surface (41) supporting the display portion (3), and a lower end surface (42) and side end surfaces (43 and 44) on which a solar cell array (5) is arranged.

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.