Abstract: According to one embodiment, a magnetic sensor includes a sensor part, a first circuit, and a second circuit. The sensor part includes a magnetic element part, first and second conductive members. The magnetic element part includes first to fourth magnetic elements. The first conductive member includes first to third conductive portions, and first and second middle portions. The second conductive member includes fourth to sixth conductive portions, and third and fourth middle portions. The first circuit is electrically connected to the third and sixth conductive portions. The first circuit is configured to supply a first current between the third and sixth conductive portions. The second circuit is electrically connected to a first connection point and a second connection point. The second circuit is electrically connected to first and second connection points. The second circuit is configured to supply a second current between the first and second connection points.

Abstract: According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.

Abstract: According to one embodiment, a magnetic sensor includes a first magnetic part, a first magnetic member, a second magnetic part, a second magnetic member, a first element, a second element, a third element, a fourth element, and a first interconnect. The first magnetic part includes first, second, and third portions. The first portion is between the second and third portions. The second magnetic part includes fourth, fifth, and sixth portions. The fourth portion is between the fifth and sixth portions. The first element includes a first magnetic layer. The second element includes a second magnetic layer. The third element includes a third magnetic layer. The fourth element includes a fourth magnetic layer. The first interconnect includes first and second interconnect portions.

Abstract: According to one embodiment, a magnetic sensor includes a first conductive part circuit, an alternating current circuit part, a first direct current circuit part, and a first element. The first conductive part circuit includes a first conductive part including a first conductive part end portion and a first conductive part other-end portion, and a first alternating current transfer element electrically connected in series with the first conductive part. The first conductive part circuit includes a first circuit end portion and a first circuit other-end portion. The alternating current circuit part is configured to apply an alternating current voltage between the first circuit end portion and the first circuit other-end portion. The first direct current circuit part is configured to apply a first direct current voltage to the first conductive part end portion and the first conductive part other-end portion. The first element includes a first magnetic layer.

Abstract: According to one embodiment, a magnetic sensor includes a first element. The first element includes a first magnetic part, a first magnetic layer, a first nonmagnetic portion, and a first intermediate magnetic layer. The first magnetic part includes first to third portions. The first portion is between the second and third portions. The first portion has a first length and a second length. The second portion has at least one of a third length longer than the first length or a fourth length longer than the second length. The third portion has at least one of a fifth length longer than the first length or a sixth length longer than the second length. The first nonmagnetic portion is provided between the first portion and the first magnetic layer. The first intermediate magnetic layer is provided between the first portion and the first nonmagnetic portion.

Abstract: According to one embodiment, a magnetic sensor includes a first element. The first element includes a first magnetic part, a first magnetic layer, a first nonmagnetic portion, and a first intermediate magnetic layer. The first magnetic part includes first to third portions. The first portion is between the second and third portions. The first portion has a first length and a second length. The second portion has at least one of a third length longer than the first length or a fourth length longer than the second length. The third portion has at least one of a fifth length longer than the first length or a sixth length longer than the second length. The first nonmagnetic portion is provided between the first portion and the first magnetic layer. The first intermediate magnetic layer is provided between the first portion and the first nonmagnetic portion.

Abstract: According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Abstract: According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.

Abstract: According to one embodiment, a magnetic sensor includes first and second elements, first and second interconnects, a first circuit portion electrically connected to the first and second interconnects and a second circuit portion electrically connected to the first and second elements. The first circuit portion supplies a first alternating current to the first interconnect and supplies a second alternating current to the second interconnect. The second circuit portion supplies a first element current to the first element and supplies a second element current to the second element. At a first time, the first alternating current has a first alternating current orientation, and the second alternating current has a second alternating current orientation. At a second time, the first alternating current has an opposite orientation to the first alternating current orientation, and the second alternating current has an opposite orientation to the second alternating current orientation.

Abstract: According to one embodiment, a magnetic sensor includes a first element, a first wire, and a first magnetic part. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer. A direction from the first counter magnetic layer toward the first magnetic layer is along a first direction. The first wire extends in a second direction crossing the first direction. The first magnetic part includes a first region and a first counter region. At least a portion of the first wire is between the first region and the first counter region in the first direction.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

Abstract: According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.

Abstract: According to one embodiment, a magnetic sensor includes first and second elements, first and second interconnects, a first circuit portion electrically connected to the first and second interconnects and a second circuit portion electrically connected to the first and second elements. The first circuit portion supplies a first alternating current to the first interconnect and supplies a second alternating current to the second interconnect. The second circuit portion supplies a first element current to the first element and supplies a second element current to the second element. At a first time, the first alternating current has a first alternating current orientation, and the second alternating current has a second alternating current orientation. At a second time, the first alternating current has an opposite orientation to the first alternating current orientation, and the second alternating current has an opposite orientation to the second alternating current orientation.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion in a first direction crossing a second direction being from the first portion toward the second portion. The second magnetic layer is provided between the first magnetic layer and at least a portion of the third portion. The first nonmagnetic layer includes first and second regions. The first region is provided between the first and second magnetic layers. The second region is continuous with the first region. The second region overlaps at least a portion of the second magnetic layer in the second direction. The controller is electrically connected to the first and second portions.

Abstract: A magnetic memory according to an embodiment includes: a first conductive layer including a first to third regions arranged along a first direction, the second region being disposed between the first region and the third region; a second conductive layer including a fourth to sixth regions arranged along the first direction, the fifth region being disposed between the fourth and sixth regions; a third conductive layer electrically connected to the third and fourth regions; a first magnetoresistance device disposed to correspond to the second region, including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second magnetoresistance device to correspond to the fifth region, including a third magnetic layer, a fourth magnetic layer, and a second nonmagnetic layer, a direction from the first region to the third region differing from a direction from the fourth region to the sixth region.