Abstract: The present invention enables a sample to be observed in a clean state directly after preparation of a final observation surface when preparing a sample for observing a material that is sensitive to heat.

Abstract: Problem To automatically repeat an operation of extracting and transferring a sample piece, which is formed by processing a sample using an ion beam, to a sample piece holder. Solution A charged particle beam includes: a computer that controls a needle actuating mechanism so as to approach a needle to a sample piece using a template formed from an absorbed current image obtained by irradiating the needle with a charged particle beam and a tip coordinate of the needle acquired from a secondary electron image obtained by irradiating the needle with the charged particle beam.

Abstract: There is provided an apparatus and a method capable of preparing a standardized probe without need for working skill of probe processing.

Abstract: Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.

Abstract: Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle ? formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

Abstract: Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

Abstract: Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

Abstract: Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample.

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.

Abstract: A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.

Abstract: Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.

Abstract: A focused ion beam apparatus, including: a sample holder provided with a fixing surface for fixing, via a deposition film, a micro-specimen extracted from a specimen using a method for fabrication by a focused ion beam, in which a width of the fixing surface is smaller than 50 microns; a specimen transferring unit having a probe to which the specimen can be joined through the deposition film, and transferring the micro-specimen extracted from the specimen by the focused ion-beam fabrication method, to the sample holder; and a sample chamber in which the sample, the sample holder and the probe are laid out, wherein, in the sample chamber, the micro-specimen extracted from the specimen by the focused ion-beam fabrication method is fixed to the fixing surface of the sample holder through the deposition film, and the micro-specimen fixed to the fixing surface is fabricated by irradiating the focused ion beam.

Abstract: A precision of removal of a damaged layer of a sample created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer generated by an ion beam, transmitted electrons which are generated by irradiating an electron beam formed in an electron beam optics system onto a sample are detected by a two-dimensional detector, and a moment for finishing the removal machining of the damaged layer is determined based on the amount of blur of a diffraction pattern acquired with the two-dimensional detector.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.

Abstract: Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample.