Patents by Inventor Satoshi Yonekura

Satoshi Yonekura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240052950
    Abstract: An automatic pressure control device that controls a pressure in a processing container to which a source gas for forming a film on a substrate is supplied, includes: a vacuum exhauster configured to vacuum-exhaust a gas in the processing container; an exhaust path connecting the processing container and the vacuum exhauster; and a butterfly valve including an annular valve seat having an inner wall surface and a valve body configured as a plate-shaped body. The valve body is rotatably installed to the valve seat via a shaft and configured to change an opening area of the exhaust path by being arranged to be inclined and changing an inclination angle of the valve body. The butterfly valve is configured to control the pressure in the processing container by changing the inclination angle of the valve body based on a result of detecting the pressure in the processing container.
    Type: Application
    Filed: August 11, 2023
    Publication date: February 15, 2024
    Inventors: Satoshi YONEKURA, Tamaki TAKEYAMA, Tatsuhiko TANIMURA, Shigeyuki OKURA
  • Patent number: 11281116
    Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: March 22, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Einosuke Tsuda, Daisuke Toriya, Satoshi Yonekura, Satoshi Takeda, Motoshi Fukudome, Kyoko Ikeda
  • Publication number: 20210302846
    Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.
    Type: Application
    Filed: March 17, 2021
    Publication date: September 30, 2021
    Inventors: Einosuke TSUDA, Daisuke TORIYA, Satoshi YONEKURA, Satoshi TAKEDA, Motoshi FUKUDOME, Kyoko IKEDA
  • Patent number: 10513777
    Abstract: A processing chamber accommodating a mounting table includes a first region and a second region. As the mounting table rotates, a substrate mounting region of the mounting table moves in a circumferential direction around the axis to pass through the first region and the second region. A first gas supply unit supplies a precursor gas to the first region from an injection unit disposed to face the mounting table. An exhaust outlet exhausts an exhaust port formed to extend along a closed path surrounding the exhaust outlet. A second gas supply unit supplies purge gas from an injection port formed to extend along a closed path surrounding the exhaust port. A plasma generation unit generates plasma from a reaction gas in the second region. An angular range of the second region is larger than an angular range of the first region.
    Type: Grant
    Filed: February 12, 2013
    Date of Patent: December 24, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahide Iwasaki, Satoshi Yonekura, Toshihiko Iwao
  • Patent number: 9831067
    Abstract: In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: November 28, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahide Iwasaki, Toshihiko Iwao, Koji Yamagishi, Satoshi Yonekura
  • Publication number: 20150279627
    Abstract: In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.
    Type: Application
    Filed: September 30, 2013
    Publication date: October 1, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahide Iwasaki, Toshihiko Iwao, Koji Yamagishi, Satoshi Yonekura
  • Publication number: 20150007774
    Abstract: A processing chamber accommodating a mounting table includes a first region and a second region. As the mounting table rotates, a substrate mounting region of the mounting table moves in a circumferential direction around the axis to pass through the first region and the second region. A first gas supply unit supplies a precursor gas to the first region from an injection unit disposed to face the mounting table. An exhaust outlet exhausts an exhaust port formed to extend along a closed path surrounding the exhaust outlet. A second gas supply unit supplies purge gas from an injection port formed to extend along a closed path surrounding the exhaust port. A plasma generation unit generates plasma from a reaction gas in the second region. An angular range of the second region is larger than an angular range of the first region.
    Type: Application
    Filed: February 12, 2013
    Publication date: January 8, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahide Iwasaki, Satoshi Yonekura, Toshihiko Iwao