Abstract: A method and apparatus for providing improved flux focusing in a write head is disclosed. The present invention uses a diamagnetic material to provide flux focusing in a storage device. An embodiment of the present invention includes diamagnetic material having a magnetic susceptibility substantially equal to or greater than 1×10?5. Another embodiment of the present invention includes diamagnetic material selected from a group comprising graphite and bismuth.

Abstract: An extraordinary magnetoresistance (EMR) magnetic head is provided including a first shield and a second shield defining a gap adapted for being positioned over a magnetic recording disk. An EMR sensor is positioned between the first shield and the second shield. In order to ensure proper operation of the EMR sensor, a plane in which the EMR sensor is positioned is perpendicular to magnetic flux associated with the magnetic recording disk.

Abstract: A magnetic tunnel junction (MTJ) memory array having a magnetically stable free layer that can be switched from one memory state to another with a minimum of energy input. The memory array includes a MTJ cell having an antiparallel coupled free layer. An electrically conductive word line passes through the free layer such that current passed through the electrically conductive word line induces a magnetic field that acts on antiparallel coupled layers of the free layer causing their magnetizations to rotate while remaining antiparallel to one another.

Abstract: A magnetic head for reading information from and writing information to a hard magnetic disk having reduced thermal protrusion at the air bearing surface. In some embodiments, a read-head portion of the magnetic head includes one or more read insulation layers, and a write-head portion of the magnetic head includes one or more write insulation layers. The magnetic head may optionally further include one or more insulation layers between the read-head portion and the write-head portion. One or more of these insulation layers includes a material with a negative thermal expansion characteristic, including but not limited to, carbon fiber, zirconium tungstate (Zr W2 O8), or hafnium tungstate (Hf W2 O8).

Abstract: A new method of performing the write operation on the MRAM bit cell with improved switching selectivity and lower write current requirements is achieved utilizing oscillating word write currents at frequency near the ferromagnetic resonance frequency of the free layer, combined with the shift in said frequency due to the magnetic field produced by the current in the bit line. Operation is implemented in a conventional magnetic random access memory having a plurality of magnetoresisitive cells formed by an intersection of a grid of word and bit lines, wherein an individual cell within the grid can be selected and switched from one magnetic state to another by the magnetic fields produced by the currents in the word and bit lines.

Abstract: A new method of performing the write operation on the MRAM bit cell with improved switching selectivity and lower write current requirements is achieved utilizing oscillating word write currents at frequency near the ferromagnetic resonance frequency of the free layer, combined with the shift in said frequency due to the magnetic field produced by the current in the bit line. Operation is implemented in a conventional magnetic random access memory having a plurality of magnetoresisitive cells formed by an intersection of a grid of word and bit lines, wherein an individual cell within the grid can be selected and switched from one magnetic state to another by the magnetic fields produced by the currents in the word and bit lines.

Abstract: A magnetic tunnel junction (MTJ) memory array having a magnetically stable free layer that can be switched from one memory state to another with a minimum of energy input. The memory array includes a MTJ cell having an antiparallel coupled free layer. An electrically conductive word line passes through the free layer such that current passed through the electrically conductive word line induces a magnetic field that acts on antiparallel coupled layers of the free layer causing their magnetizations to rotate while remaining antiparallel to one another.

Abstract: An effective heat sink is provided for a magnetic recording head. The heat sink conducts heat away from the recording head thus limiting the range of temperatures to which the recording head is subjected. A heat sink on a recording head significantly reduces heat induced protrusion.

Abstract: An extraordinary magnetoresistance (EMR) magnetic head is provided including a first shield and a second shield defining a gap adapted for being positioned over a magnetic recording disk. An EMR sensor is positioned between the first shield and the second shield. In order to ensure proper operation of the EMR sensor, a plane in which the EMR sensor is positioned is perpendicular to magnetic flux associated with the magnetic recording disk.