Abstract: A stent crimping assembly is provided for crimping a stent from a first diameter to a reduced second diameter. The crimping assembly includes a plurality of movable wedges disposed about a rotational axis to form a wedge assembly. Each wedge includes a respective first side and a second side converging to form a tip portion. The tip portions are arranged to collectively form an iris about the rotational axis thereof. The iris defining a crimp aperture about which the movable wedges are disposed. Each wedge is associated with a stationary structure and an rotational actuation unit such that during rotation of the actuation unit about the rotational axis, the iris is caused to rotate about the rotational axis, relative the stationary structure, for inward movement of the wedges to decrease the size of the aperture and outward movement of the wedges to increase the size of the aperture.

Abstract: A stent crimping assembly is provided for crimping a stent from a first diameter to a reduced second diameter. The crimping assembly includes a plurality of movable wedges disposed about a rotational axis to form a wedge assembly. Each wedge includes a respective first side and a second side converging to form a tip portion. The tip portions are arranged to collectively form an iris about the rotational axis thereof. The iris defining a crimp aperture about which the movable wedges are disposed. Each wedge is associated with a stationary structure and an rotational actuation unit such that during rotation of the actuation unit about the rotational axis, the iris is caused to rotate about the rotational axis, relative the stationary structure, for inward movement of the wedges to decrease the size of the aperture and outward movement of the wedges to increase the size of the aperture.

Abstract: A system for closing an opening in tissue includes a closure element having a coiled body and a plurality of tissue engaging portions disposed about at least a portion of the body, the body being formed of a resilient material. The system also includes a clip applier apparatus that is configured to deploy the closure element into the tissue.

Abstract: A variable direction of view endoscope is positionable at desired locations within the ear, nose, throat, paranasal sinuses or cranium to accomplish visualization. A method of use includes introducing the variable direction of view endoscope into a nasal cavity with the endoscope adjusted to a first direction of view between about 0 degrees and about 15 degrees relative to a longitudinal axis of the endoscope. A therapeutic device is introduced into the nasal cavity and the endoscope is adjusted to a second direction of view directed toward the sinus opening or passageway. The method also includes advancing the therapeutic device into or through the sinus opening and viewing at least one of the sinus opening or passageway or the therapeutic device using the endoscope adjusted to the second direction of view.

Abstract: A stent crimping apparatus is provided which includes a crimping assembly adapted to crimp the stent, a clamp assembly configured to secure the medical device; and a control unit configured to control the movement of the crimp assembly. The clamp assembly includes a lower clamp device defining a seating groove formed and dimensioned to seat a portion of the medical device therein, and a retaining assembly having an elastomeric member. This elastomeric member defines a contacting groove oriented in an opposed manner proximate to at least a portion of the seating groove. The clamp assembly further includes an actuation mechanism associated with the retaining assembly and the lower clamp device such that operation thereof causes the retaining assembly to move between an opened condition and a closed condition.

Abstract: A closure element includes a coiled body and a plurality of tissue engaging portions. The tissue engaging portions disposed about at least a portion of the coiled body. The coiled body is formed of a resilient material according to one example. According to another example, a closure element includes a spiral body and a plurality of tissue engaging portions disposed about the spiral body. The spiral body is formed from a resilient material.

Abstract: A stent crimping assembly is provided for crimping a stent from a first diameter to a reduced second diameter. The crimping assembly includes a plurality of movable wedges disposed about a rotational axis to form a wedge assembly. Each wedge includes a respective first side and a second side converging to form a tip portion. The tip portions are arranged to collectively form an iris about the rotational axis thereof. The iris defining a crimp aperture about which the movable wedges are disposed. Each wedge is associated with a stationary structure and an rotational actuation unit such that during rotation of the actuation unit about the rotational axis, the iris is caused to rotate about the rotational axis, relative the stationary structure, for inward movement of the wedges to decrease the size of the aperture and outward movement of the wedges to increase the size of the aperture.

Abstract: The invention features non-human mammals and animal cells that contain a targeted disruption of an ?2/?2 and/or an ?2/?2 gene.

Abstract: The invention features non-human mammals and animal cells that contain a targeted disruption of a ?2/?1 gene.

Abstract: A fabric article treating apparatus for dispensing a benefit composition through a nozzle that directs the benefit composition as droplets or particles into the chamber of the fabric article drying appliance. The droplets or particles provide benefits to the fabric articles within the drying appliance. The treating apparatus includes one or more safety features, and/or it includes beneficial control concepts that enhance the effects of the benefit composition being dispensed through the nozzle.

Abstract: A system is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The system includes apparatus for loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.

Abstract: A system is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The system includes apparatus for loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.