Patents by Inventor Scott Bruce Clendenning

Scott Bruce Clendenning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming conformal metallic platinum zinc films for semiconductor devices
    Patent number: 8440556
    Abstract: Forming conformal platinum-zinc films for semiconductor devices is described. In one example, a conformal film is formed by heating a substrate in a reaction chamber, exposing a desired region of the substrate to a precursor that contains platinum, purging excess precursor from the chamber, exposing the desired region of the substrate to a co-reactant containing zinc to cause a reaction between the precursor and the co-reactant to form a platinum zinc film on the desired region, and purging the chamber of excess reaction by-products.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: May 14, 2013
    Assignee: Intel Corporation
    Inventors: Scott Bruce Clendenning, Niloy Mukherjee
  • FORMING CONFORMAL METALLIC PLATINUM ZINC FILMS FOR SEMICONDUCTOR DEVICES
    Publication number: 20120161252
    Abstract: Forming conformal platinum-zinc films for semiconductor devices is described. In one example, a conformal film is formed by heating a substrate in a reaction chamber, exposing a desired region of the substrate to a precursor that contains platinum, purging excess precursor from the chamber, exposing the desired region of the substrate to a co-reactant containing zinc to cause a reaction between the precursor and the co-reactant to form a platinum zinc film on the desired region, and purging the chamber of excess reaction by-products.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 28, 2012
    Inventors: Scott Bruce Clendenning, Niloy Mukherjee
  • METHODS OF FORMING NICKEL SULPHIDE FILM ON A SEMICONDUCTOR DEVICE
    Publication number: 20110169059
    Abstract: Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
    Type: Application
    Filed: March 18, 2011
    Publication date: July 14, 2011
    Inventors: Scott Bruce Clendenning, Niloy Mukherjee, Ravi Pillarisetty
  • Methods of forming nickel sulfide film on a semiconductor device
    Patent number: 7964490
    Abstract: Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: June 21, 2011
    Assignee: Intel Corporation
    Inventors: Scott Bruce Clendenning, Niloy Mukherjee, Ravi Pillarisetty
  • METHODS OF FORMING NICKEL SULFIDE FILM ON A SEMICONDUCTOR DEVICE
    Publication number: 20100163937
    Abstract: Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Inventors: Scott Bruce Clendenning, Niloy Mukherjee, Ravi Pillarisetty