Patents by Inventor Scott C. Horst

Scott C. Horst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7838867
    Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: November 23, 2010
    Assignee: United States of America as represented by the Director, National Security Agency, The
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 7838866
    Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: November 23, 2010
    Assignee: The United States of America as represented by the Director of the National Security Agency
    Inventors: John L. Fitz, Daniel Stephen Hinkel, Scott C. Horst
  • Patent number: 7741136
    Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: June 22, 2010
    Assignee: The United States of America as represented by the Director, National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 7700391
    Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: April 20, 2010
    Assignee: U.S. Government as Represented by the Director, National Security Agency, The
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 7700387
    Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: April 20, 2010
    Assignee: The United States of America as Represented by the Director, National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 7678593
    Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: March 16, 2010
    Assignee: The United States of America, as represented by the Director, National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 7611914
    Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: November 3, 2009
    Assignee: The United States of America as represented by the Director, National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 7599594
    Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure and a sacrificial spacer layer is deposited in the trench. The waveguide is then created in the trench on the sacrificial spacer layer. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: October 6, 2009
    Assignee: The United States of America as represented by Director, National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst
  • Patent number: 6835581
    Abstract: A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: December 28, 2004
    Assignee: The United States of America as represented by the National Security
    Inventors: John L. Fitz, Daniel Stephen Hinkel, Scott C. Horst, Harris Turk
  • Publication number: 20030035453
    Abstract: A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.
    Type: Application
    Filed: August 17, 2001
    Publication date: February 20, 2003
    Inventors: John L. Fitz, Daniel Stephen Hinkel, Scott C. Horst, Harris Turk
  • Patent number: RE45084
    Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.
    Type: Grant
    Filed: April 19, 2012
    Date of Patent: August 19, 2014
    Assignee: National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst