Abstract: An EUV mask (10) includes an opening (26) that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. An etch stop layer (20) may be provided between a lower multilayer reflective stack (14) and an upper multilayer reflective stack (22) to ensure an appropriate and accurate depth of the opening. An absorber layer (32) may be deposited within the opening to sufficiently reduce the amount of reflection within dark region (30). Optimal thicknesses and locations of the various layers are described.

Abstract: A extreme ultraviolet (EUV) mask blank having a reflective stack formed by depositing repeated periods of a silicon layer, a first barrier layer, a molybdenum layer, and a second barrier layer using atomic layer deposition is discussed. Precursors using silane and hydrogen are used to form the silicon layer. The first and second barrier layers are preferably different thicknesses of the same material and can be formed using precursors including diborane and methane. In one embodiment, the molybdenum layer is formed using precursors including hydrogen and molybdenum pentachloride or molybdenum pentaiodide. An EUV mask used to pattern a photoresist layer to form an integrated circuit is manufactured from the EUV mask blank.

Abstract: An EUV mask (10) includes an opening (26) that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. An etch stop layer (20) may be provided between a lower multilayer reflective stack (14) and an upper multilayer reflective stack (22) to ensure an appropriate and accurate depth of the opening. An absorber layer (32) may be deposited within the opening to sufficiently reduce the amount of reflection within dark region (30). Optimal thicknesses and locations of the various layers are described.

Abstract: A extreme ultraviolet (EUV) mask blank having a reflective stack formed by depositing repeated periods of a silicon layer, a first barrier layer, a molybdenum layer, and a second barrier layer using atomic layer deposition is discussed. Precursors using silane and hydrogen are used to form the silicon layer. The first and second barrier layers are preferably different thicknesses of the same material and can be formed using precursors including diborane and methane. In one embodiment, the molybdenum layer is formed using precursors including hydrogen and molybdenum pentachloride or molybdenum pentaiodide. An EUV mask used to pattern a photoresist layer to form an integrated circuit is manufactured from the EUV mask blank.

Abstract: A method of manufacturing a semiconductor component includes providing a semiconductor substrate (150) with a photoresist layer and providing a reflective lithographic mask (120, 200) having a radiation-absorptive composite layer (270) in a pattern over a radiation-reflective composite layer (220). A radiation sensitive layer is disposed over the semiconductor substrate, and an extreme ultra-violet light (110, 130) reflects a pattern off of the mask and onto the photoresist layer.