Abstract: Systems and methods are provided for enhanced flushing of printing systems. One embodiment is a printing system that includes an ink flushing controller. The ink flushing controller is able to identify an overlap region wherein nozzles at adjacent printheads of a marking engine overlap along a widthwise direction, to detect primary nozzles that print image data within the overlap region, and to detect overlap nozzles that do not have firing instructions to eject ink within the overlap region. The ink flushing controller is further able to analyze nozzle firing data for each overlap nozzle to determine inactive firing spans for each overlap nozzle, and in response to determining that an inactive firing span for an overlap nozzle exceeds a threshold, to generate a firing instruction directing the overlap nozzle to eject ink.

Abstract: Catalyst composition which comprises a first zeolite having a BEA* framework type and a second zeolite having a MOR framework type and a mesopore surface area of greater than 30 m2/g is disclosed. These catalyst compositions are used to remove catalyst poisons from untreated feed streams having one or more impurities which cause deactivation of the downstream catalysts employed in hydrocarbon conversion processes, such as those that produce mono-alkylated aromatic compounds.

Abstract: A printing system is disclosed.

Abstract: Embodiments of the invention can provide systems and methods for startup of a power plant. According to one embodiment of the invention, a system can be provided. The system can include a computer processor. The system can also include a memory operable to store computer-executable instructions operable to determine a current state of the power plant; determine an anticipated future state of the power plant; and determine a startup profile between the current state of the power plant and the anticipated future state of the power plant based on at least one parameter and a desired result.

Abstract: Third stage turbine buckets have airfoil profiles substantially in accordance with Cartesian coordinate values of X, Y and Z? set forth Table I wherein X and Y values are in inches and the Z? values are non-dimensional values from 0 to 1 convertible to Z distances in inches by multiplying the Z? values by the height of the airfoil in inches and adding the radius of the airfoil base. The X and Y values are distances which, when connected by smooth continuing arcs, define airfoil profile sections at each distance Z. The profile sections at each distance Z are joined smoothly to one another to form a complete airfoil shape. The X, Y and Z distances may be scalable as a function of the same constant or number to provide a scaled up or scaled down airfoil section for the bucket. The nominal airfoil given by the X, Y and Z distances lies within an envelope of +/?0.0.060 inches in directions normal to the surface of the airfoil.

Abstract: Third stage turbine buckets have airfoil profiles substantially in accordance with Cartesian coordinate values of X, Y and Z? set forth Table I wherein X and Y values are in inches and the Z? values are non-dimensional values from 0 to 1 convertible to Z distances in inches by multiplying the Z? values by the height of the airfoil in inches and adding the radius of the airfoil base. The X and Y values are distances which, when connected by smooth continuing arcs, define airfoil profile sections at each distance Z. The profile sections at each distance Z are joined smoothly to one another to form a complete airfoil shape. The X, Y and Z distances may be scalable as a function of the same constant or number to provide a scaled up or scaled down airfoil section for the bucket. The nominal airfoil given by the X, Y and Z distances lies within an envelope of ±0.0.060 inches in directions normal to the surface of the airfoil.

Abstract: A gate structure (30) is formed over a semiconductor (10). Sidewall structures (200) of a first width W1 are formed adjacent to the gate structure (30) and source and drain regions (90) are formed in the semiconductor (10). An etch process is performed to reduce the width of the sidewall structure to W2 and silicide regions (110) are then formed adjacent to the sidewall structures (205).

Abstract: A gate structure (30) is formed over a semiconductor (10). Sidewall structures (200) of a first width W1 are formed adjacent to the gate structure (30) and source and drain regions (90) are formed in the semiconductor (10). An etch process is performed to reduce the width of the sidewall structure to W2 and silicide regions (110) are then formed adjacent to the sidewall structures (205).