Patents by Inventor Scott Houston Meiere
Scott Houston Meiere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8399695Abstract: This invention relates to organometallic precursor compounds represented by the formula (H)mM(R)n wherein M is a metal or metalloid, R is the same or different and is a substituted or unsubstituted, saturated or unsaturated, heterocyclic radical containing at least one nitrogen atom, m is from 0 to a value less than the oxidation state of M, n is from 1 to a value equal to the oxidation state of M, and m+n is a value equal to the oxidation state of M, a process for producing the organometallic precursor compounds, and a method for producing a film or coating from the organometallic precursor compounds.Type: GrantFiled: December 19, 2007Date of Patent: March 19, 2013Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Publication number: 20130047890Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.Type: ApplicationFiled: October 25, 2012Publication date: February 28, 2013Inventor: Scott Houston Meiere
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Publication number: 20130052349Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.Type: ApplicationFiled: October 25, 2012Publication date: February 28, 2013Inventor: Scott Houston Meiere
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Patent number: 8318966Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.Type: GrantFiled: May 29, 2007Date of Patent: November 27, 2012Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Patent number: 8221837Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.Type: GrantFiled: May 5, 2011Date of Patent: July 17, 2012Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Patent number: 8153831Abstract: This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques.Type: GrantFiled: September 11, 2007Date of Patent: April 10, 2012Assignee: Praxair Technology, Inc.Inventors: David M. Thompson, David Walter Peters, Scott Houston Meiere
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Publication number: 20120029219Abstract: This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.Type: ApplicationFiled: January 24, 2011Publication date: February 2, 2012Inventors: Scott Houston Meiere, James Philip Natwora, JR.
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Publication number: 20110293852Abstract: This invention relates to organometallic precursor compounds represented by the formula (H)mM(R)n wherein M is a metal or metalloid, R is the same or different and is a substituted or unsubstituted, saturated or unsaturated, heterocyclic radical containing at least one nitrogen atom, m is from 0 to a value less than the oxidation state of M, n is from 1 to a value equal to the oxidation state of M, and m+n is a value equal to the oxidation state of M, a process for producing the organometallic precursor compounds, and a method for producing a film or coating from the organometallic precursor compounds.Type: ApplicationFiled: December 19, 2007Publication date: December 1, 2011Inventor: Scott Houston Meiere
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Publication number: 20110206863Abstract: This invention relates to organometallic compounds represented by the formula M(NR1R2)x wherein M is a metal or metalloid, R1 is the same or different and is a hydrocarbon group or a heteroatom-containing group, R2 is the same or different and is a hydrocarbon group or a heteroatom-containing group; R1 and R2 can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R1 or R2 of one (NR1R2) group can be combined with R1 or R2 of another (NR1R2) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; x is equal to the oxidation state of M; and wherein said organometallic compound has (i) a steric bulk sufficient to maintain a monomeric structure and a coordination number equal to the oxidation state of M with respect to anionic ligands, and (ii) a molecular weight sufficient to possess a volatility suitable for vapor deposition; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallicType: ApplicationFiled: May 4, 2011Publication date: August 25, 2011Inventor: Scott Houston Meiere
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Publication number: 20110206845Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.Type: ApplicationFiled: May 5, 2011Publication date: August 25, 2011Inventor: Scott Houston Meiere
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Patent number: 7960565Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.Type: GrantFiled: September 23, 2009Date of Patent: June 14, 2011Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Patent number: 7956168Abstract: This invention relates to organometallic compounds represented by the formula M(NR1R2)x wherein M is a metal or metalloid, R1 is the same or different and is a hydrocarbon group or a heteroatom-containing group, R2 is the same or different and is a hydrocarbon group or a heteroatom-containing group; R1 and R2 can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R1 or R2 of one (NR1R2) group can be combined with R1 or R2 of another (NR1R2) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; x is equal to the oxidation state of M; and wherein said organometallic compound has (i) a steric bulk sufficient to maintain a monomeric structure and a coordination number equal to the oxidation state of M with respect to anionic ligands, and (ii) a molecular weight sufficient to possess a volatility suitable for vapor deposition; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallicType: GrantFiled: May 25, 2007Date of Patent: June 7, 2011Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Patent number: 7956207Abstract: This invention relates to organometallic compounds represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.Type: GrantFiled: September 7, 2007Date of Patent: June 7, 2011Assignee: Praxair Technology, Inc.Inventors: Scott Houston Meiere, John D. Peck, Ronald F. Spohn, David M. Thompson
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Publication number: 20100028535Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.Type: ApplicationFiled: September 23, 2009Publication date: February 4, 2010Inventor: Scott Houston Meiere
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Patent number: 7619093Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.Type: GrantFiled: September 1, 2005Date of Patent: November 17, 2009Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Publication number: 20090202742Abstract: This invention relates to organometallic precursor compounds represented by the formula (L)M(L?)2(NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L? is the same or different and is a ? acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.Type: ApplicationFiled: April 22, 2009Publication date: August 13, 2009Inventor: Scott Houston Meiere
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Patent number: 7547464Abstract: This invention relates to organometallic precursor compounds represented by the formula (L)M(L?)2(NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L? is the same or different and is a ? acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.Type: GrantFiled: May 21, 2007Date of Patent: June 16, 2009Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Publication number: 20080081922Abstract: This invention relates to organometallic compounds represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.Type: ApplicationFiled: September 7, 2007Publication date: April 3, 2008Inventors: Scott Houston Meiere, John D. Peck, Ronald F. Spohn, David M. Thompson
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Patent number: 7332618Abstract: This invention relates to organometallic precursor compounds represented by the formula (H)mM(R)n wherein M is a metal or metalloid, R is the same or different and is a substituted or unsubstituted, saturated or unsaturated, heterocyclic radical containing at least one nitrogen atom, m is from 0 to a value less than the oxidation state of M, n is from 1 to a value equal to the oxidation state of M, and m+n is a value equal to the oxidation state of M, a process for producing the organometallic precursor compounds, and a method for producing a film or coating from the organometallic precursor compounds.Type: GrantFiled: August 1, 2005Date of Patent: February 19, 2008Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere
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Patent number: 7244858Abstract: This invention relates to organometallic precursor compounds represented by the formula (L)M(L?)2(NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L? is the same or different and is a ? acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.Type: GrantFiled: January 19, 2005Date of Patent: July 17, 2007Assignee: Praxair Technology, Inc.Inventor: Scott Houston Meiere