Abstract: A field emission display (100) includes a cathode plate (110) having a plurality of electron emitters (119), an anode plate (120) having a plurality of phosphors (126), and a spacer (130) having a rough surface (140). The roughness of rough surface (140) is selected to improve the charging and discharging characteristics of field emission display (100). Preferably, rough surface (140) is characterized by a peak-to-valley number within a range of 0.5-6 micrometers.

Abstract: A field emission display (100) includes a cathode plate (102) having a plurality of electron emitters (124), an anode plate (104) opposing the cathode plate (102), and a bulk-resistive spacer (108) extending between the anode plate (104) and the cathode plate (102). The bulk-resistive spacer (108) is made from an electrically conductive material. The resistivity of the electrically conductive material is selected to remove impinging charges while preventing excessive power loss due to electrical current through the bulk-resistive spacer (108) from the anode plate (104) to the cathode plate (102).

Abstract: A field emission device (200, 300, 400, 500) includes a supporting substrate (210, 310, 410, 510), a cathode (215, 315, 415, 515) formed thereon, a plurality of electron emitters (270, 370, 470, 570) and a plurality of gate extraction electrodes (250, 350, 450, 550) proximately disposed to the plurality of electron emitters (270, 370, 470, 570) for effecting electron emission therefrom, a major dielectric surface (248, 348, 448, 548) disposed between the plurality of gate extraction electrodes (250, 350, 450, 550), a charge dissipation layer (252, 352, 452, 552) formed on the major dielectric surface (248, 348, 448, 548), and an anode (280, 380, 480, 580) spaced from the gate extraction electrodes (250, 350, 450, 550).

Abstract: An FED (10) utilizes a semiconductor junction to control the current flow (32) through an emission tip of the FED (10). The semiconductor junction is created between a conductive layer (12) and a doped semiconductor layer (14). The conductive layer (12) can be a metal or another doped semiconductor layer in order to form the semiconductor junction.

Abstract: A method for forming a field emission device. A substrate is selectively patterned. An etch is performed to remove portions of the substrate to form protrusions. An oxidation is performed to the substrate that forms a first oxidized layer. A perpendicular etch is performed that removes portions of the first oxidized layer. A second oxidation is performed to the substrate that forms a second oxidized layer. A conductive or semiconductive layer is deposited onto the second oxidized layer. An etch is performed to remove a portion of the first oxidized layer and a portion of the second oxidized layer to expose the protuberance.

Abstract: A method of forming a field emission device including the steps of selective deposition of a column/ridge within the confines of a conformally deposited insulator layer and subsequent directional deposition to form a cone/wedge, having a geometric discontinuity of small radius of curvature, on the column/ridge is provided.