Abstract: An apparatus and method for combined radio frequency identification (RFID)-based asset management and component authentication are provided. The apparatus comprises a plurality of components to be authenticated, a memory configured to store inventory data, a plurality of root-of-trust (RoT) integrated circuits (ICs), a wired communication bus, and a radio frequency identification (RFID) relay tag. Each RoT IC is mechanically coupled to a corresponding one of the plurality of components and configured to generate authentication data based on a unique key generated for authenticating the corresponding component. The RFID relay tag is connected to each of the RoT ICs via the wired communication bus and is configured to communicate with each of the RoT ICs via the wired communication bus and pass the authentication data and the inventory data to an RFID reader via a radio frequency signal to facilitate authentication of components and inventory management.

Abstract: An apparatus and method for combined radio frequency identification (RFID)-based asset management and component authentication are provided. The apparatus comprises a plurality of components to be authenticated, a memory configured to store inventory data, a plurality of root-of-trust (RoT) integrated circuits (ICs), a wired communication bus, and a radio frequency identification (RFID) relay tag. Each RoT IC is mechanically coupled to a corresponding one of the plurality of components and configured to generate authentication data based on a unique key generated for authenticating the corresponding component. The RFID relay tag is connected to each of the RoT ICs via the wired communication bus and is configured to communicate with each of the RoT ICs via the wired communication bus and pass the authentication data and the inventory data to an RFID reader via a radio frequency signal to facilitate authentication of components and inventory management.

Abstract: A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68 and 70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62).

Abstract: A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68 and 70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62).

Abstract: Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high or low temperature cofired ceramic layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package.

Abstract: Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high temperature cofired ceramic (HTCC) layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package.

Abstract: A transmit/receive (T/R) module adapted for use in a radar system. The module has a unified structure including a layered substrate on and in which two T/R channel circuits are integrated. The channel circuits make use of power distribution, channel controller, and RF signal routing circuitry, partly on a channel shared basis. In the RF routing circuitry, respective coupler elements are employed to combine RF receive signals for output to an RF receive manifold and to split an RF transmit signal from a transmit manifold into separate RF transmit signals for input to the T/R channel circuits.

Abstract: Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high temperature cofired ceramic (HTCC) layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package.

Abstract: A DC-DC voltage converter 40, which is adaptable to VHF operation, has a power oscillator 52 to which a filtered input DC voltage 50 is applied for conversion to an output DC voltage. The power oscillator includes a push-pull amplifier 58, 60 and an impedance transformation circuit 62 to which the amplifier is connected. The power oscillator also includes a rectifier circuit 64 which is connected to the impedance transformation circuit. A feedback circuit 68 controls the frequency of the oscillator to regulate the output DC voltage. The oscillator frequency depends on the impedance values of oscillator circuit components and the values of a plurality of oscillator component intrinsic parameters.

Abstract: A transmit/receive (T/R) module adapted for use in a radar system. The module has a unified structure including a layered substrate on and in which two T/R channel circuits are integrated. The channel circuits make use of power distribution, channel controller, and RF signal routing circuitry, partly on a channel shared basis. In the RF routing circuitry, respective coupler elements are employed to combine RF receive signals for output to an RF receive manifold and to split an RF transmit signal from a transmit manifold into separate RF transmit signals for input to the T/R channel circuits.

Abstract: A T/R module including a multilevel, multichip microwave package having a plurality of gallium arsenide monolithic microwave integrated circuit chips (MMICs) implementing RF switching elements, a variable phase shifter, a plurality of RF amplifiers, and gain trim attenuators and which are located on a planar RF assembly. The module's architecture includes shared or common MMIC circuit elements during both transmit and receive operation modes thus reducing the number of MMICs required while at the same time preloading the supply voltage regulator-modulator which supplies DC power to all the MMIC circuits without degrading T/R module efficiency.

Abstract: A T/R module including a multilevel, multichip microwave package having a plurality of gallium arsenide monolithic microwave integrated circuit chips (MMICs) implementing RF switching elements, a variable phase shifter, a plurality of RF amplifiers, and gain trim attenuators and which are located on a planar RF assembly. The module's architecture includes shared or common MMIC circuit elements during both transmit and receive operation modes thus reducing the number of MMICs required while at the same time preloading the supply voltage regulator-modulator which supplies DC power to all the MMIC circuits without degrading T/R module efficiency.

Abstract: An improved active power line conditioner is disclosed. The active power line conditioner includes a series inverter coupled to an energy input source, and a parallel inverter coupled to a non-linear load. The non-linear load is powered by a load current which includes fundamental components and harmonic components. An energy storage element is electrically connected between the series inverter and the parallel inverter. The parallel inverter is used for current control functions, while the series inverter is used for instantaneous output voltage regulation. In one embodiment of the invention, a parallel current limiter is used for the parallel inverter. The parallel current limiter is fixed to satisfy specified output voltage total harmonic distortion requirements or peak to rms output current ratios in the active power line conditioner. A series current limiter may be used for the series inverter.

Abstract: A drain pulsing circuit for intermittently applying electric power to the drain of a solid state amplifier uses a N-channel MOSFET as the drain switch, but does not require an external bias voltage to drive the drain switch gate. The pulsing circuit generally comprises a control input circuit for generating a control pulse, and a charge pumping circuit having a capacitor that is connected to the output of the control input circuit, and first and second complementary MOSFET switches. The capacitor in the pumping circuit stores a charge during an off cycle when the control input circuit does not generate a control pulse. However, when a control pulse is generated, the first and second complementary MOSFET switches of the pumping circuit connect the gate of the N-channel drain switch MOSFET to the voltages associated with both the capacitor charge and the control pulse (which "pumps" the capacitor to a higher charge) in order to temporarily bias the N-channel drain switch MOSFET to an "on" state.

Abstract: A DC/DC power converter 10 which avoids shoot-through current by employing an energy storage fly-back inductor 27 having two separate primary windings 28 and 29, one for current in each direction. The fly-back inductor 27 is located inside the switching bridge. In addition, a transformer 30 having two separate windings 42 and 44 is also employed. Thus, shoot-through is avoided and an extra switch for pulse width modulation is not required. In addition, the device does not apply a greater voltage than the line voltage to the switches and "holes" in the output current are not created so that less noise is generated by the device.