Patents by Inventor Scott Light
Scott Light has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11951696Abstract: A cosmetic part is formed via compression molding in a single molding operation with no post processing by forming an assemblage of feed constituents, wherein the assemblage includes plural fiber-bundle-based preforms and one or more resin-only constituents, the latter configured and positioned as appropriate to create resin-rich cosmetic layers where desired on the part.Type: GrantFiled: January 10, 2022Date of Patent: April 9, 2024Assignee: Arris Composites Inc.Inventors: Bert D. Mannhalter, J. Scott Perkins, Allison R. Light, Ian Graham, Joe Wong, Riley Reese
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Patent number: 11912279Abstract: Systems and methods for limiting functionality of a vehicle are described. In one example, vehicle feature modules may specify vehicle behaviors and vehicle operation is limited according to the specified behaviors. Vehicle actuators may be adjusted to limit vehicle operation according to the specified vehicle behaviors. The vehicle behaviors may apply to powertrain systems, navigation systems, climate control systems, lighting systems and other vehicle systems.Type: GrantFiled: September 8, 2021Date of Patent: February 27, 2024Assignee: Ford Global Technologies, LLCInventors: Scott Thompson, David Hancock, Scott Christensen, John Rollinger, Jeremy Russell, Jeffrey Tumavitch, Dennis Light, David Schmitt
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Patent number: 9235134Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.Type: GrantFiled: August 16, 2010Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan Millward
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Patent number: 9213239Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: GrantFiled: January 22, 2013Date of Patent: December 15, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 8883372Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: GrantFiled: June 5, 2012Date of Patent: November 11, 2014Assignee: Nanya Technology Corp.Inventors: Scott Light, Dan Millward, Anton Devilliers, Yuan He, Michael Hyatt, Lijing Gou, Kaveri Jain, Zishu Zhang, Jianming Zhou
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Publication number: 20140205952Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: ApplicationFiled: January 22, 2013Publication date: July 24, 2014Applicant: Micron Technology, Inc.Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 8625078Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.Type: GrantFiled: April 6, 2011Date of Patent: January 7, 2014Assignee: Nanya Technology Corp.Inventors: Jianming Zhou, Scott Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton DeVilliers, Michael Hyatt
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Publication number: 20130323628Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: ApplicationFiled: June 5, 2012Publication date: December 5, 2013Inventors: SCOTT LIGHT, DAN MILLWARD, ANTON DEVILLIERS, YUAN HE, MICHAEL HYATT, LIJING GOU, KAVERI JAIN, ZISHU ZHANG, JIANMING ZHOU
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Patent number: 8507191Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.Type: GrantFiled: January 7, 2011Date of Patent: August 13, 2013Assignee: Micron Technology, Inc.Inventors: Dan B. Millward, Yuan He, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Jianming Zhou, Kaveri Jain, Scott Light, Michael Hyatt
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Patent number: 8440371Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: GrantFiled: January 7, 2011Date of Patent: May 14, 2013Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. DeVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan B. Millward
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Publication number: 20120257177Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.Type: ApplicationFiled: April 6, 2011Publication date: October 11, 2012Inventors: JIANMING ZHOU, SCOTT LIGHT, DAN MILLWARD, YUAN HE, KAVERI JAIN, LIJING GOU, ZISHU ZHANG, ANTON DEVILLIERS, MICHAEL HYATT
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Publication number: 20120177891Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.Type: ApplicationFiled: January 7, 2011Publication date: July 12, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Dan B. Millward, Yuan He, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Jianming Zhou, Kaveri Jain, Scott Light, Michael Hyatt
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Publication number: 20120178026Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: ApplicationFiled: January 7, 2011Publication date: July 12, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. DeVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan B. Millward
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Publication number: 20120038895Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.Type: ApplicationFiled: August 16, 2010Publication date: February 16, 2012Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan Millward
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Publication number: 20060181692Abstract: A method and apparatus for controlling an intensity distribution of a radiation beam directed to a microlithographic substrate. The method can include directing a radiation beam from a radiation source along the radiation path, with the radiation beam having a first distribution of intensity as the function of location in a plane generally transverse to the radiation path. The radiation beam impinges on an adaptive structure positioned in the radiation path and an intensity distribution of the radiation beam is changed from the first distribution to a second distribution by changing a state of the first portion of the adaptive structure relative to a second portion of the adaptive structure. For example, the transmissivity of the first portion, or inclination of the first portion can be changed relative to the second portion. The radiation is then directed away from the adaptive structure to impinge on the microlithographic substrate.Type: ApplicationFiled: April 4, 2006Publication date: August 17, 2006Applicant: Micron Technology, Inc.Inventors: Ulrich Boettiger, Scott Light
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Publication number: 20060158631Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.Type: ApplicationFiled: March 17, 2006Publication date: July 20, 2006Applicant: Micron Technology, Inc.Inventors: Ulrich Boettiger, Scott Light, William Rericha, Craig Hickman
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Publication number: 20050233588Abstract: The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.Type: ApplicationFiled: April 25, 2005Publication date: October 20, 2005Inventors: Ulrich Boettiger, Scott Light
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Publication number: 20050041228Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.Type: ApplicationFiled: July 28, 2004Publication date: February 24, 2005Inventors: Ulrich Boettiger, Scott Light, William Rericha, Craig Hickman
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Publication number: 20050000936Abstract: The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.Type: ApplicationFiled: July 3, 2003Publication date: January 6, 2005Inventors: Ulrich Boettiger, Scott Light