Abstract: The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.

Abstract: An apparatus and method for fabricating electronic devices on a polymeric substrate provide for positionally constraining a polymer substrate on a platen, and heating the constrained polymer substrate to at least a glass transition temperature of the polymer substrate. A heat processable ink is applied to the constrained polymer substrate to form at least a portion of a layer of an electronic device thereon.