Abstract: A medical device including a medical device metallic substrate component, with perforations therethrough, attached to a medical device polymeric component abutting the thin metallic film component. The medical device also includes a polymeric sleeve covering the perforations and at least a portion of the polymeric component abutting the metallic substrate component. Moreover, the polymeric sleeve intrudes into the perforations and joins the metallic substrate component to the polymeric component. A method for attaching a medical device metallic substrate component to a medical device polymeric component includes forming a plurality of perforations in the medical device metallic substrate component and abutting the medical device polymeric component against the medical device metallic substrate component. Subsequently, a polymeric sleeve is applied over the perforations and at least a portion of the abutted medical device polymeric component.

Abstract: Medical devices, and in particular implantable medical devices, may be coated to minimize or substantially eliminate a biological organism's reaction to the introduction of the medical device to the organism. The medical devices may be coated with any number of biocompatible materials. Therapeutic drugs, agents or compounds may be mixed with the biocompatible materials and affixed to at least a portion of the medical device. These therapeutic drugs, agents or compounds may also further reduce a biological organism's reaction to the introduction of the medical device to the organism. In addition, these therapeutic drugs, agents and/or compounds may be utilized to promote healing, including the formation of blood clots. The drugs, agents, and/or compounds may also be utilized to treat specific diseases, including vulnerable plaque. Therapeutic agents may also be delivered to the region of a disease site.

Abstract: A VCSEL includes a gap in a mirror stack and a protective layer sealing an end of the gap. The gap defines a boundary of the aperture of the VCSEL without introducing the stresses that oxide regions in oxide VCSELs can cause, and the protective layer, which can be a thin dielectric layer, shields the mirror stack from environmental damage. The VCSEL can thus achieve high reliability. A fabrication process for the VCSEL forms an oxidation hole, oxidizes a portion of an aluminum-rich layer in a mirror stack of the VCSEL exposed in the hole, and then removes all or some of the resulting oxide to form the desired gap. The protective layer can then be deposited to seal an end of the gap.

Abstract: A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask atop an emitter cap layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.

Abstract: A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask atop an emitter cap layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.

Abstract: A method for forming a heterojunction bipolar transistor (HBT) includes forming an etch mask a top layer of the HBT to expose a portion of the emitter cap layer, and selectively etching the exposed portion of the emitter cap layer to (1) form a reentry feature and (2) to expose a portion of the emitter layer. The method further includes selectively etching the exposed portion of the emitter layer to expose a portion of the base layer, and forming a metal layer over the exposed portion of the base layer and the exposed portion of the emitter cap layer.