Patents by Inventor Scott Paiva

Scott Paiva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage depletion FET employing a channel stopping implant
    Patent number: 7736961
    Abstract: A high voltage field effect transistor device is fabricated. A substrate is provided. Isolation structures and well regions are formed therein. Drain well regions are formed within the well regions. An n-type channel stop resist mask is formed. N-type channel stop regions and n-type surface channel regions are formed. A p-type channel stop resist mask is formed. P-type channel stop regions and p-type surface channel regions are then formed. A dielectric layer is formed over the surface channel regions. Source regions are formed within the well regions. Drain regions are formed within the drain well regions. Back gate regions are formed within the well regions. Top gates are formed on the dielectric layer overlying the surface channel regions.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: June 15, 2010
    Assignee: Texas Instruments Incorporated
    Inventors: Steven L. Merchant, Philip L. Hower, Scott Paiva
  • High voltage depletion FET employing a channel stopping implant
    Publication number: 20060292771
    Abstract: A high voltage field effect transistor device is fabricated. A substrate is provided. Isolation structures and well regions are formed therein. Drain well regions are formed within the well regions. An n-type channel stop resist mask is formed. N-type channel stop regions and n-type surface channel regions are formed. A p-type channel stop resist mask is formed. P-type channel stop regions and p-type surface channel regions are then formed. A dielectric layer is formed over the surface channel regions. Source regions are formed within the well regions. Drain regions are formed within the drain well regions. Back gate regions are formed within the well regions. Top gates are formed on the dielectric layer overlying the surface channel regions.
    Type: Application
    Filed: June 28, 2005
    Publication date: December 28, 2006
    Inventors: Steven Merchant, Philip Hower, Scott Paiva
  • Web-based mining of statistical data
    Patent number: 6532427
    Abstract: A statistical process control information system includes a process information system (process IS) and an analysis information system (analysis IS). The analysis IS generates a script file and a command file. The script file includes responses to command-line queries generated by a process data extraction program, and the command file includes commands for invoking the process data extraction program and copying an extracted data file to the analysis IS. The analysis IS issues a command to the process IS to execute an extraction command routine, causing the process IS to copy and execute the command file. The analysis IS performs statistical analysis on the extracted data file and creates graphical SPC chart files, including a hypertext summary, and these are posted in a network-accessible database for users.
    Type: Grant
    Filed: May 10, 2001
    Date of Patent: March 11, 2003
    Assignee: Texas Instruments Incorporated
    Inventors: Madhukar Joshi, Scott Paiva