Abstract: Mechanisms for ensuring the migratability of circuits into future technologies while minimizing fabrication costs and maintaining or improving power efficiency are provided. A mask layer is introduced to portions of the integrated circuit prior to a stress inducing layer being applied to the integrated circuit. In an exemplary embodiment, a tensile or compressive film is applied to the devices on the integrated circuit chip but is removed from those devices whose operation is to be modified. Thereafter, a tensile or compressive strain layer is applied to the devices whose film was removed. An additional mask layer may then be used to effect a halo or well implant to relax the strain on the devices not being protected by the mask layer. In this way, the current of the non-protected devices is reduced back to its original target design point.

Abstract: Mechanisms for ensuring the migratability of circuits into future technologies while minimizing fabrication costs and maintaining or improving power efficiency are provided. A mask layer is introduced to portions of the integrated circuit prior to a stress inducing layer being applied to the integrated circuit. In an exemplary embodiment, a tensile or compressive film is applied to the devices on the integrated circuit chip but is removed from those devices whose operation is to be modified. Thereafter, a tensile or compressive strain layer is applied to the devices whose film was removed. An additional mask layer may then be used to effect a halo or well implant to relax the strain on the devices not being protected by the mask layer. In this way, the current of the non-protected devices is reduced back to its original target design point.

Abstract: A system and method for ensuring the migratability of circuits into future technologies while minimizing fabrication costs and maintaining or improving power efficiency are provided. A mask layer is introduced to portions of the integrated circuit prior to a stress inducing layer being applied to the integrated circuit. In an exemplary embodiment of the present invention, a tensile or compressive film is applied to the devices on the integrated circuit chip but is removed from those devices whose operation is to be modified. Thereafter, a tensile or compressive strain layer is applied to the devices whose film was removed. An additional mask layer may then be used to effect a halo or well implant to relax the strain on the devices not being protected by the mask layer. In this way, the current of the non-protected devices is reduced back to its original target design point.

Abstract: A system and method for ensuring the migratability of circuits into future technologies while minimizing fabrication costs and maintaining or improving power efficiency are provided. A mask layer is introduced to portions of the integrated circuit prior to a stress inducing layer being applied to the integrated circuit. In an exemplary embodiment of the present invention, a tensile or compressive film is applied to the devices on the integrated circuit chip but is removed from those devices whose operation is to be modified. Thereafter, a tensile or compressive strain layer is applied to the devices whose film was removed. An additional mask layer may then be used to effect a halo or well implant to relax the strain on the devices not being protected by the mask layer. In this way, the current of the non-protected devices is reduced back to its original target design point.

Abstract: The rotary adjustment mechanism adjusts the seat back of a vehicle seat. The mechanism includes a handle mounted for rotation with respect to the seat. The handle has an internal gear, and the internal gear drives a pair of pinion gears positioned within the internal gear. Each gear rotates a flexible shaft, and each shaft connects to a leadscrew. The leadscrew has a threaded end, which mates with a threaded nut connected one seat pivot. Shaft rotation rotates the leadscrew, which causes the threaded nut to move axially, which in turn, pivots the respective seat pivot.

Abstract: A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.