Patents by Inventor Scott W. Corzine
Scott W. Corzine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8039869Abstract: A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.Type: GrantFiled: August 14, 2007Date of Patent: October 18, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Steven D. Lester, Virginia M. Robbins, Scott W. Corzine
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Patent number: 7941024Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.Type: GrantFiled: September 10, 2008Date of Patent: May 10, 2011Assignee: Avago Technologies Fiber IP (Singapore) Pte. LtdInventors: David P. Bour, Scott W. Corzine
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Patent number: 7720264Abstract: An object to be detected is illuminated by a single broadband light source or multiple light sources emitting light at different wavelengths. The light is captured by an imager, which includes a light-detecting sensor covered by a hybrid filter.Type: GrantFiled: May 10, 2004Date of Patent: May 18, 2010Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Julie E. Fouquet, Richard E. Haven, Scott W. Corzine
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Patent number: 7679098Abstract: Edge-emitting light source and method for fabricating an edge-emitting light source. The edge-emitting light source includes a photonic crystal having at least one waveguide region. An edge-emitting semiconductor structure having a light emitting active layer is incorporated within the at least one waveguide region. Light emitted by the edge-emitting semiconductor structure and within the bandgap of the photonic crystal is confined within the waveguide region and guided out of the photonic crystal through the waveguide region.Type: GrantFiled: January 30, 2006Date of Patent: March 16, 2010Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventor: Scott W. Corzine
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Patent number: 7656919Abstract: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.Type: GrantFiled: January 25, 2009Date of Patent: February 2, 2010Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Michael Renne Ty Tan, Scott W. Corzine, David P. Bour
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Patent number: 7638810Abstract: Refractory metal ELOG mask are used for GaN based VCSELs and edge emitter structures to serve as intracavity contacts. In these structures the refractory metal ELOG masks serve both as ohmic contact metals as well as masks for ELOG.Type: GrantFiled: September 9, 2005Date of Patent: December 29, 2009Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: David P. Bour, Scott W Corzine
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Patent number: 7586614Abstract: A system and method of using a refractive index sensor to determine a characteristic of a sample. The operation of the system and method allow for determining a change in a bulk index of the sample, and an amount of sample adsorption, using a reflected beam from an interface of the sensor. An embodiment of a system and method further provide for identifying changes in incident angles determine from reflective measurement data of the sensor, in combination with different proportionality constants of the refractive index sensor to determine a characteristic of the sample.Type: GrantFiled: August 24, 2005Date of Patent: September 8, 2009Assignee: Agilent Technologies, Inc.Inventors: Gregory D. VanWiggeren, Scott W. Corzine
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Patent number: 7583863Abstract: An object to be imaged or detected is illuminated by a single broadband light source or multiple light sources emitting light at different wavelengths. The light is detected by a detector, which includes a light-detecting sensor covered by a hybrid filter.Type: GrantFiled: May 10, 2004Date of Patent: September 1, 2009Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Julie E. Fouquet, Richard E. Haven, Scott W. Corzine
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Patent number: 7573931Abstract: A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.Type: GrantFiled: January 9, 2002Date of Patent: August 11, 2009Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Michael Renne Ty Tan, Chao Kun Lin, Scott W. Corzine, Jintian Zhu, Michael H. Leary
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Publication number: 20090129426Abstract: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.Type: ApplicationFiled: January 25, 2009Publication date: May 21, 2009Applicant: Avago Technologies ECBU (Singapore) Pte. Ltd.Inventors: Michael R. T. Tan, Scott W. Corzine, David P. Bour
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Publication number: 20090068778Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.Type: ApplicationFiled: September 10, 2008Publication date: March 12, 2009Applicant: Avago Technologies Fiber IP (Singapore) PTE. LTD.Inventors: David P. Bour, Scott W. Corzine
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Patent number: 7502401Abstract: The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.Type: GrantFiled: July 22, 2005Date of Patent: March 10, 2009Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Jeffrey N. Miller, Scott W. Corzine, David P. Bour
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Patent number: 7502405Abstract: The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.Type: GrantFiled: August 22, 2005Date of Patent: March 10, 2009Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Michael R. T. Tan, Scott W. Corzine, David P. Bour
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Patent number: 7440666Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.Type: GrantFiled: June 16, 2005Date of Patent: October 21, 2008Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.Inventors: David P. Bour, Scott W. Corzine
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Patent number: 7352788Abstract: In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.Type: GrantFiled: August 15, 2005Date of Patent: April 1, 2008Assignee: Avago Technologies ECBU IP (Singapore) Pte, Ltd.Inventors: Scott W. Corzine, David P. Bour
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Patent number: 7349456Abstract: Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping.Type: GrantFiled: October 7, 2005Date of Patent: March 25, 2008Assignee: Agilent Technologies, Inc.Inventors: David P. Bour, Scott W Corzine
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Patent number: 7274719Abstract: A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.Type: GrantFiled: March 9, 2005Date of Patent: September 25, 2007Assignee: Agilent Technologies, Inc.Inventors: David P. Bour, Scott W Corzine
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Patent number: 7273798Abstract: A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.Type: GrantFiled: August 1, 2005Date of Patent: September 25, 2007Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Steven D. Lester, Virginia M. Robbins, Scott W. Corzine
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Patent number: 7218660Abstract: In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.Type: GrantFiled: October 27, 2003Date of Patent: May 15, 2007Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.Inventors: Bernhard Ulrich Koelle, Scott W. Corzine, Laura Giovane, An-Nien Chang
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Patent number: 7184640Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.Type: GrantFiled: February 25, 2004Date of Patent: February 27, 2007Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.Inventors: David P. Bour, Scott W. Corzine