Abstract: A system and method are provided that enable a processor to have the immutable code and data that it uses for its boot process to be securely patched. A system may include a read only memory (ROM) storing one or more certificates and instructions, an array of one-time programmable (OTP) indicators, a bootstrap controller connected to the ROM and the array of OTP indicators, and a random access memory (RAM) connected to the bootstrap controller. The bootstrap controller is configured to verify integrity of firmware for boot based on certificates stored in ROM, check for a patch in the array of OTP indicators, and write the one or more certificates and the instructions in ROM and the patch into the RAM. The patch may be loaded into RAM by the bootstrap controller and overwrite ROM instructions or certificates in RAM.

Abstract: A dual large area plasma processing system is provided which can comprise a substrate, a first and second electron beam wherein the substrate is positioned between the first and second electron beam, a first plasma produced by the first electron beam passing through a first gas wherein the first plasma being a first low electron temperature plasma of pre-determined width, length, thickness, and location relative to a surface; and a second plasma produced by the second electron beam passing through a second gas wherein the second plasma being a low electron temperature plasma of pre-determined width, length, thickness, and location relative to a surface. The system can include a first gas manifold that can be located above the first electron beam and control the first gas and a second gas manifold that can be located above the second electron beam and control the second gas. The system can include an external magnetic field for confining the electron beams so as to produce uniform plasmas.

Abstract: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time.

Abstract: The present invention provides methods and systems for steganographically encoding a file which is in a page description language (PDL) such as PostScript. Aspects of the present invention can be used to: i) encode a PDL file and generate an encoded PDL file; and ii) provide an “interpreter” which generates raster images from a PDL file. Portions of the raster images can be steganographically encoded. Encoded raster images can be printed or the raster images can be combined into a new PDL file.

Abstract: An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.

Abstract: A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.

Abstract: An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.

Abstract: This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.