Abstract: A transflective liquid crystal display device includes a thin film transistor disposed at a corner of a pixel region, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, a reflector disposed in the pixel region and spaced apart from the thin film transistor, the reflector formed of the same material as one of the gate, source, and drain electrodes, a color filter disposed within the pixel region, the color filter having one of red, green, and blue colors, a black matrix over the thin film transistor along color filter borders of adjacent pixel regions, and a pixel electrode formed of a transparent conductive material adjacent to the color filter, the pixel electrode having a first end portion contacting the drain electrode of the thin film transistor, wherein the pixel region is divided into a reflective portion including the reflector and a transmissive portion absent of the reflector.

Abstract: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor, a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

Abstract: An array substrate of a liquid crystal display device having a color filter on a thin film transistor structure and a method of fabricating the same are disclosed in the present invention. The liquid crystal display device having a COT structure array substrate includes a top gate type thin film transistor formed on a substrate and having an active layer, a gate electrode, a source electrode, and a drain electrode, a storage capacitor adjacent to the top gate type thin film transistor and having a first storage electrode and a second storage electrode, a black matrix on the top gate type thin film transistor, a first pixel electrode at a pixel region and contacting a drain electrode, a color filter on the first pixel electrode at the pixel region, and a second pixel electrode on the color filter and contacting the first pixel electrode at the portion over the black matrix.

Abstract: A manufacturing method of a liquid crystal display device includes steps of forming liquid crystal display by patterning the passivation layer and the gate insulating layer by using the black matrix as an etching mask to expose the portion of the drain electrode, the gate pad, and the data pad, forming a first transparent conductive layer on the black matrix, wherein the first transparent conductive layer contacts the portion of the drain electrode, the gate pad, and the data pad, forming a color filter layer on the first transparent conductive layer in the opening, forming a second transparent conductive layer on the color filter layer, the second transparent conductive layer contacting the first transparent conductive layer, and forming a pixel electrode, a gate pad terminal and a data pad terminal by patterning the first and second transparent conductive layers, wherein the pixel electrode is disposed in the pixel area, the gate pad terminal is disposed on the gate pad, and the data pad terminal is dispose

Abstract: A method of crystallizing amorphous silicon includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon layer, and simultaneously applying a thermal treatment, an electric field, and a magnetic field to crystallize the amorphous silicon layer.

Abstract: An array substrate of a liquid crystal display being capable of increasing the electrostatic capacitance of a storage capacitor without decreasing the aperture ratio of the LCD. In the array substrate, the gate line is formed a disposed material of a first and a second metal layer. The first metal layer of the gate line is extended on the pixel area.

Abstract: A TFT type optical detecting sensor includes a capacitor, a sensor TFT, and a switching TFT each having an active layer with a channel having an elongated width. The width of the channel of the sensor TFT is substantially defined by a distance of a side of the pixel excluding the switching source wire and sensor drain wire. The first electrode of the capacitor of the optical detecting sensor is electrically connected to the sensor gate electrode of the sensor TFT.

Abstract: A method of crystallizing amorphous silicon includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon layer, and simultaneously applying a thermal treatment, an electric field, and a magnetic field to crystallize the amorphous silicon layer.

Abstract: A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

Abstract: A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.