Patents by Inventor Se-won Lee
Se-won Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162913Abstract: A sample and hold circuit includes a sampling circuit including a first amplifier configured to amplify an input voltage to generate an amplification voltage, the sampling circuit configured to perform a sampling operation of sampling the amplification voltage. The sample and hold circuit also includes a holding circuit configured to perform a holding operation of setting an output voltage to a voltage level of the input voltage, based on the sampling operation and an amplification operation of a second amplifier.Type: ApplicationFiled: March 10, 2023Publication date: May 16, 2024Applicant: SK hynix Inc.Inventor: Se Won LEE
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Publication number: 20240160235Abstract: A semiconductor device includes a voltage supply circuit including a first pad to which a first source voltage that is generated from an external power source is applied and a second pad to which a second source voltage that is generated from the external power source is applied and configured to generate an internal voltage based on at least one of the first source voltage and the second source voltage and an internal voltage supply circuit configured to generate the internal voltage by supplying less than all of the second source voltage to the first source voltage when a level of the second source voltage is a set voltage level or higher, when generating the internal voltage based on the first source voltage.Type: ApplicationFiled: March 16, 2023Publication date: May 16, 2024Applicant: SK hynix Inc.Inventor: Se Won LEE
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Publication number: 20240158705Abstract: The present disclosure provides a method and device for refining waste plastic pyrolysis oil, the method including (S1) subjecting a waste plastic pyrolysis oil feedstock to a heat treatment by charging the waste plastic pyrolysis oil feedstock into a rotary kiln reactor and increasing a temperature of the rotary kiln reactor to form a product; (S2) recovering a gas component from the product of step (S1); (S3) separating a high boiling point wax component from the recovered gas component and re-supplying the separated high boiling point wax component to the rotary kiln reactor in step (S1); and (S4) recovering refined oil from the gas component from which the high boiling point wax component is removed.Type: ApplicationFiled: November 13, 2023Publication date: May 16, 2024Inventors: Sang Hwan Jo, Soo Kil Kang, Ik Hwan Na, Ho Won Lee, Jae Heum Jung, Se Rah Moon, Hee Young Jeon
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Publication number: 20240149218Abstract: A catalyst for removing nitrogen oxides and a manufacturing method thereof are provided. The catalyst for removing nitrogen oxides according to embodiments of the present invention is manufactured by mixing and grinding a metal catalyst and a zeolite. The zeolite has a carbon layer formed on the surface of the zeolite. The manufacturing method of a catalyst for removing nitrogen oxides according to embodiments of the present invention comprises preparing a zeolite, forming a carbon layer on the surface of the zeolite, and mixing and grinding the zeolite having the carbon layer with a metal catalyst.Type: ApplicationFiled: October 19, 2023Publication date: May 9, 2024Inventors: Do Heui KIM, Se Won JEON, Inhak SONG, Kwan-Young LEE
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Publication number: 20240148836Abstract: In a method for treating a cancer expressing secreted protein acidic and rich in cysteine (SPARC), a composition including an albumin and at least one cysteine bound thereto is administered to a subject in need thereof. The cancer expressing the SPARC may be at least one selected from the group consisting of a brain tumor, melanoma, breast cancer, rectal cancer and stomach cancer.Type: ApplicationFiled: August 14, 2023Publication date: May 9, 2024Inventors: Keon Wook KANG, Myung Geun SONG, Cho Rong PARK, Yun-Sang LEE, Hye Won YOUN, Ji Yong PARK, Se Ra OH
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Patent number: 11957495Abstract: An X-ray imaging apparatus includes an imaging device configured to capture a camera image of a target; a controller configured to stitch a plurality of X-ray images of respective divided regions of the target to generate one X-ray image of the target; and a display configured to display a settings window that provides a GUI for receiving a setting of an X-ray irradiation condition for the respective divided regions, and display the camera image in which positions of the respective divided regions are displayed.Type: GrantFiled: December 15, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho Jun Lee, Ju Hwan Kim, Se Hui Kim, Seung-Hoon Kim, Si Won Park, Phill Gu Jung, Duhgoon Lee, Myung Jin Chung, Do Hyeong Hwang, Sung Jin Park
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Patent number: 11956998Abstract: A display device includes: a first substrate including a pixel area and a transmissive area; a thin-film transistor on the first substrate; a planarization layer on the thin-film transistor; a first light emitting electrode on the planarization layer; a bank covering a part of the first light emitting electrode; a light emitting layer on the first light emitting electrode; and a second light emitting electrode on the light emitting layer and the bank. The transmissive area includes a transmissive hole penetrating the bank and the planarization layer.Type: GrantFiled: January 4, 2023Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Se Wan Son, Moo Soon Ko, Rae Young Gwak, Jin Seock Ma, Min Jeong Park, Ki Bok Yoo, So La Lee, Jin Goo Jung, Jong Won Chae, Ye Ji Han
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Patent number: 11945915Abstract: A method for synthesizing a pre-hydrolyzed polysilicate, wherein a polysilicate is applied as a reactant when synthesizing the pre-hydrolyzed polysilicate, and the total amount of water added in the reaction system is specified. The method is capable of omitting a condensation reaction by applying a polysilicate as a reactant, thereby significantly shortening synthesis time and reducing production costs when compared with a typical synthesis method in which alkoxysilane-based monomer compound is used as a reactant. In addition, the gelation reaction time and the weight average molecular weight can be easily controlled, and a pre-hydrolyzed polysilicate excellent in storage stability and processability can be synthesized.Type: GrantFiled: November 27, 2019Date of Patent: April 2, 2024Assignee: LG CHEM, LTD.Inventors: Kyu Reon Lee, Kyoung Shil Oh, Jong Hun Kim, Se Won Baek
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Patent number: 11894041Abstract: An electronic device includes an internal mode control circuit suitable for generating a burst control signal, a blocking control signal and an internal voltage control signal based on a refresh cycle when an internal mode is performed in a self-refresh operation, a refresh control circuit suitable for generating a refresh signal for performing a refresh operation every refresh cycle when the self-refresh operation is performed, generating the refresh signal every set cycle based on the burst control signal when the internal mode is performed, and blocking the generation of the refresh signal based on the blocking control signal, and an internal voltage generation circuit suitable for adjusting a level of an internal voltage for the refresh operation based on the internal voltage control signal.Type: GrantFiled: February 21, 2022Date of Patent: February 6, 2024Assignee: SK hynix Inc.Inventors: Se Won Lee, Tae Kyun Shin, Jun Sang Lee
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Patent number: 11881249Abstract: A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.Type: GrantFiled: December 14, 2021Date of Patent: January 23, 2024Assignee: SK hynix Inc.Inventors: Woongrae Kim, Byeong Cheol Lee, Se Won Lee
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Patent number: 11631580Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.Type: GrantFiled: July 14, 2021Date of Patent: April 18, 2023Assignee: Versum Materials US, LLCInventors: Xinjian Lei, Matthew R. MacDonald, Moo-Sung Kim, Se-Won Lee
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Patent number: 11615832Abstract: An electronic device includes a drive control signal generation circuit and an internal voltage drive circuit. The drive control signal generation circuit detects a level of an internal voltage to generate a drive control signal that adjusts a level of the internal voltage. The internal voltage drive circuit drives the internal voltage based on the drive control signal.Type: GrantFiled: March 23, 2021Date of Patent: March 28, 2023Assignee: SK hynix Inc.Inventors: Woongrae Kim, Se Won Lee
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Patent number: 11573584Abstract: A voltage generation circuit includes an operation voltage driving circuit configured to drive an operation voltage based on a calibration voltage and a feedback voltage and generate the feedback voltage from the operation voltage. The voltage generation circuit also includes a reference voltage calibration circuit configured to generate the calibration reference voltage, wherein the calibration reference voltage varies based on a set value calculated according to the feedback voltage and a reference voltage.Type: GrantFiled: October 14, 2021Date of Patent: February 7, 2023Assignee: SK hynix Inc.Inventor: Se Won Lee
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Publication number: 20220413529Abstract: A voltage generation circuit includes an operation voltage driving circuit configured to drive an operation voltage based on a calibration voltage and a feedback voltage and generate the feedback voltage from the operation voltage. The voltage generation circuit also includes a reference voltage calibration circuit configured to generate the calibration reference voltage, wherein the calibration reference voltage varies based on a set value calculated according to the feedback voltage and a reference voltage.Type: ApplicationFiled: October 14, 2021Publication date: December 29, 2022Applicant: SK hynix Inc.Inventor: Se Won LEE
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Publication number: 20220282367Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allow anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from about 3 to about 5 mol. %, suitable for forming a ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films suitable for forming ferroelectric materials using the formulations.Type: ApplicationFiled: September 9, 2020Publication date: September 8, 2022Applicant: VERSUM MATERIALS US, LLCInventors: MATTHEW R. MACDONALD, XINJIAN LEI, MOO-SUNG KIM, SE-WON LEE
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Publication number: 20220189767Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.Type: ApplicationFiled: July 14, 2021Publication date: June 16, 2022Applicant: VERSUM MATERIALS US, LLCInventors: Xinjian Lei, Matthew R. MacDonald, Moo-Sung Kim, Se-Won LEE
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Publication number: 20220172774Abstract: An electronic device includes a drive control signal generation circuit and an internal voltage drive circuit. The drive control signal generation circuit detects a level of an internal voltage to generate a drive control signal that adjusts a level of the internal voltage. The internal voltage drive circuit drives the internal voltage based on the drive control signal.Type: ApplicationFiled: March 23, 2021Publication date: June 2, 2022Applicant: SK hynix Inc.Inventors: Woongrae KIM, Se Won LEE
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Publication number: 20220172772Abstract: An electronic device includes an internal mode control circuit suitable for generating a burst control signal, a blocking control signal and an internal voltage control signal based on a refresh cycle when an internal mode is performed in a self-refresh operation, a refresh control circuit suitable for generating a refresh signal for performing a refresh operation every refresh cycle when the self-refresh operation is performed, generating the refresh signal every set cycle based on the burst control signal when the internal mode is performed, and blocking the generation of the refresh signal based on the blocking control signal, and an internal voltage generation circuit suitable for adjusting a level of an internal voltage for the refresh operation based on the internal voltage control signal.Type: ApplicationFiled: February 21, 2022Publication date: June 2, 2022Applicant: SK hynix Inc.Inventors: Se Won LEE, Tae Kyun SHIN, Jun Sang LEE
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Publication number: 20220101907Abstract: A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.Type: ApplicationFiled: December 14, 2021Publication date: March 31, 2022Inventors: Woongrae KIM, Byeong Cheol LEE, Se Won LEE
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Patent number: 11264076Abstract: A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.Type: GrantFiled: October 23, 2019Date of Patent: March 1, 2022Assignee: SK hynix Inc.Inventors: Woongrae Kim, Byeong Cheol Lee, Se Won Lee