Abstract: There are disclosed a microfluidic ejection device and a method of manufacturing the same. The microfluidic ejection device includes a flow path plate having an inlet into which a microfluid is drawn, a pressure chamber connected with the inlet and having formed therein, a plurality of chamber units divided by a plurality of partitions, and a nozzle connected with the pressure chamber and ejecting the microfluid by integrating the microfluid, having passed through the plurality of chamber units, into a single flow path; and actuators formed on an upper portion of the flow path plate so as to respectively correspond to the plurality of chamber units and providing driving force for ejecting the microfluid from the pressure chamber to the nozzle. The microfluidic ejection device has superior microfluidic ejection performance because variations in pressure within the pressure chamber can be accurately adjusted.

Abstract: There is provided a micro-ejector. The micro-ejector according to an exemplary embodiment of the present invention may include an ejection device including a passage for ejecting fluid contained therein, and a piezoelectric actuator providing a driving force for ejecting fluid, a mounting plate including a passage for providing fluid to the ejection device formed therein, and a mounting groove on which the ejection device is mounted, and a connection member formed on the mounting plate, and adopted for connecting the piezoelectric actuator to an external power source.

Abstract: There are provided a micro-ejector and a method for manufacturing the same. The micro-ejector according to the present invention includes a passage plate including a barrier rib portion disposed in an upper space in a chamber and a protruding portion disposed in a lower space in the chamber and forming a passage in the same direction as a fluid discharging direction together with the barrier rib portion; and an actuator formed on the upper portion of the passage plate to correspond to the chamber and providing a driving force of discharging the fluid to the nozzle from the chamber.

Abstract: There is provided a laminate substrate having a bypass valve structure. The bypass valve structure formed in the laminate substrate includes a sloped path connecting a first straight path with a second straight path, and a bypass path connected with at least one of the first and second straight paths and configured as a curved path.

Abstract: There is provided an inkjet print head. The inkjet print head includes a pressure chamber storing ink drawn from a reservoir in order to be ejected through a nozzle, a restrictor provided as a path between the reservoir and the pressure chamber, and a stepped part provided inside the pressure chamber and creating variations in ink flow inside the pressure chamber.

Abstract: The present invention relates to a biomolecule detection apparatus and a biomolecule measurement system. A biomolecule detection apparatus according to an aspect of the invention may include: an upper disc having a fluid inlet in a thickness direction through which a fluid is introduced to the inside; a lower disc laminated to the upper disc and having a fluid outlet in a thickness direction through which the fluid exits to the outside; detection units provided on each of the upper disc and the lower disc and including spherical microbeads having surfaces coated with materials used to capture biomolecules; and via holes provided along the edge of each of the upper disc and the lower disc so that the fluid flows between the upper disc and the lower disc.

Abstract: Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Abstract: Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.

Abstract: Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Abstract: A showerhead for chemical vapor deposition (CVD) includes a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber, and at least one support member passing through and coupled with the head and the reaction chamber so as to support the head.

Abstract: There is provided a chemical vapor deposition apparatus including: a chamber including a reactor where a deposition object is deposited; a first supplier including a plurality of gas pipes allowing a first gas to be jetted into the reactor in a substantially horizontal direction; a second supplier including a plurality of holes of a predetermined size having the gas pipes inserted therein, respectively; a supply flow path formed between each of the gas pipes and each of the holes, the supply flow path allowing a second gas to be supplied into the reactor in a substantially horizontal direction.

Abstract: There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.

Abstract: There is provided a showerhead including: a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber; a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.

Abstract: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.