Patents by Inventor Sean S. Kang

Sean S. Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145246
    Abstract: Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. A silicon-containing material may be formed on the substrate. The methods may include contacting the silicon-containing material with the silicon-containing precursor and the dopant precursor. The methods may include forming a doped silicon-containing material on the silicon-containing material. The methods may include oxidizing the substrate. The oxidizing may form an oxidized doped silicon-containing material. The methods may include etching the oxidized doped silicon-containing material.
    Type: Application
    Filed: October 26, 2022
    Publication date: May 2, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Yi Yang, In Soo Jung, Sean S. Kang, Srinivas D. Nemani, Papo Chen, Ellie Y. Yieh
  • Patent number: 11756803
    Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: September 12, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Qiwei Liang, Srinivas D. Nemani, Sean S. Kang, Adib Khan, Ellie Y. Yieh
  • Publication number: 20230093374
    Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
    Type: Application
    Filed: November 29, 2022
    Publication date: March 23, 2023
    Inventors: Qiwei LIANG, Srinivas D. NEMANI, Sean S. KANG, Adib KHAN, Ellie Y. YIEH
  • Patent number: 11527421
    Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: December 13, 2022
    Assignee: Micromaterials, LLC
    Inventors: Qiwei Liang, Srinivas D. Nemani, Sean S. Kang, Adib Khan, Ellie Y. Yieh
  • Publication number: 20220344282
    Abstract: Provided are methods of reducing the stress of a semiconductor wafer. A wafer map of a free-standing wafer is created using metrology tools. The wafer map is then converted into a power spectral density (PSD) using a spatial frequency scale. The fundamental component of bow is then compensated with a uniform film, e.g., silicon nitride (SiN), deposited on the back side of the wafer.
    Type: Application
    Filed: April 27, 2022
    Publication date: October 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Pradeep K. Subrahmanyan, Sean S. Kang, Sony Varghese
  • Patent number: 11373877
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: June 28, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Daisuke Shimizu, Taiki Hatakeyama, Shinichi Koseki, Sean S. Kang, Jairaj Joseph Payyapilly, Hikaru Watanabe
  • Patent number: 11164723
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Grant
    Filed: January 18, 2021
    Date of Patent: November 2, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Daisuke Shimizu, Taiki Hatakeyama, Sean S. Kang, Katsumasa Kawasaki, Chunlei Zhang
  • Publication number: 20210320012
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Application
    Filed: April 13, 2020
    Publication date: October 14, 2021
    Inventors: Daisuke SHIMIZU, Taiki HATAKEYAMA, Shinichi KOSEKI, Sean S. KANG, Jairaj Joseph PAYYAPILLY, Hikaru WATANABE
  • Publication number: 20210142987
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Application
    Filed: January 18, 2021
    Publication date: May 13, 2021
    Inventors: Daisuke SHIMIZU, Taiki HATAKEYAMA, Sean S. KANG, Katsumasa KAWASAKI, Chunlei ZHANG
  • Patent number: 10930471
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Daisuke Shimizu, Taiki Hatakeyama, Sean S Kang, Katsumasa Kawasaki, Chunlei Zhang
  • Publication number: 20200350183
    Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Qiwei LIANG, Srinivas D. NEMANI, Sean S. KANG, Adib KHAN, Ellie Y. YIEH
  • Publication number: 20200312680
    Abstract: Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 1, 2020
    Inventors: DAISUKE SHIMIZU, Taiki Hatakeyama, Sean S. Kang, Chunlei Zhang, Sergio F. Shoji
  • Publication number: 20200294771
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Application
    Filed: January 30, 2020
    Publication date: September 17, 2020
    Inventors: DAISUKE SHIMIZU, TAIKI HATAKEYAMA, SEAN S. KANG, KATSUMASA KAWASAKI, CHUNLEI ZHANG
  • Patent number: 10720341
    Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: July 21, 2020
    Assignee: Micromaterials, LLC
    Inventors: Qiwei Liang, Srinivas D. Nemani, Sean S. Kang, Adib Khan, Ellie Y. Yieh
  • Patent number: 10636704
    Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Sean S. Kang, Keith Tatseun Wong, He Ren, Mehul B. Naik, Ellie Y. Yieh, Srinivas D. Nemani
  • Patent number: 10593518
    Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: March 17, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Daisuke Shimizu, Taiki Hatakeyama, Sean S. Kang, Katsumasa Kawasaki, Chunlei Zhang
  • Publication number: 20190362983
    Abstract: Methods and apparatuses for etching oxide-nitride stacks to form features that include high aspect ratio features are discussed herein. The methods include providing an ionizable gas mixture to a processing chamber of an etch reactor. The ionizable gas mixture includes C3H2F4 and a companion gas such a fluorocarbon. The ionizable gas mixture may be introduced to the chamber along with a carrier gas such as O2 in addition to inert gases and other process gases. A plasma is formed from the ionizable gas mixture and etches the stack such that the etch selectivity of the stack is 1:1.
    Type: Application
    Filed: April 30, 2019
    Publication date: November 28, 2019
    Inventors: Daisuke SHIMIZU, Wonseok LEE, Sean S. KANG
  • Publication number: 20190148178
    Abstract: A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.
    Type: Application
    Filed: November 7, 2018
    Publication date: May 16, 2019
    Inventors: Qiwei LIANG, Srinivas D. NEMANI, Sean S. KANG, Adib KHAN, Ellie Y. YIEH
  • Patent number: 10269571
    Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: April 23, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Keith Tatseun Wong, Shiyu Sun, Sean S. Kang, Nam Sung Kim, Srinivas D. Nemani, Ellie Y. Yieh
  • Patent number: 10224224
    Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: March 5, 2019
    Assignee: Micromaterials, LLC
    Inventors: Qiwei Liang, Srinivas D. Nemani, Adib Khan, Venkata Ravishankar Kasibhotla, Sultan Malik, Sean S. Kang, Keith Tatseun Wong