Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.

Abstract: Aspects of the present disclosure include methods, apparatuses, and computer readable media for transmitting a light such that is incident on a semiconductor device, detecting a first reflected light from a first layer of the semiconductor device and a second reflected light from a second layer of the semiconductor device, identifying a defect in the first layer based on the first reflected light and the second reflected light, wherein the defect provides a shunt path between a top electrode to be deposited on the first layer and the second layer, and performing a defect reduction procedure on the semiconductor device to compensate for the defect in response to identifying the defect.

Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.

Abstract: An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

Abstract: An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

Abstract: A solar cell includes a support (6), a back electrode layer (5), at least a hydrogenated microcrystalline silicon photoelectric device (9), and a top electrode layer (11). The back electrode layer (5) has a rough surface. The solar cell includes, between the back electrode layer (5) and the hydrogenated microcrystalline silicon photoelectric device (9), an asymmetric intermediate layer (8), the intermediate layer (8) being adjacent to the hydrogenated microcrystalline silicon photoelectric device (9) and having a surface, on the side of the back electrode layer (5), having a roughness greater than the roughness of the surface of the intermediate layer (8) on the side of the hydrogenated microcrystalline silicon device (9). Such solar cells allow obtaining optimum Voc and FF parameters, while maintaining high current.