Patents by Inventor Sebastiano Amara

Sebastiano Amara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MANUFACTURING PROCESS OF A VERTICAL-CHANNEL SEMICONDUCTOR DEVICE AND VERTICAL-CHANNEL SEMICONDUCTOR DEVICE
    Publication number: 20230326995
    Abstract: The present disclosure is directed to a vertical-channel semiconductor device. For manufacturing the vertical-channel semiconductor device, starting from a work wafer having a first side and a second side opposite to the first side along a direction, a first doped region is formed in the work wafer, from the second side of the work wafer. The work wafer has a first conductivity type and a first doping level, the first doped region has the first conductivity type and a second doping level higher than the first doping level. A device active region having a channel region extending in the direction is formed in the work wafer, on the first side of the work wafer. The first doped region and the device active region delimit, in the work wafer, a drift region. The first doped region is formed before the device active region.
    Type: Application
    Filed: March 28, 2023
    Publication date: October 12, 2023
    Applicant: STMICROELECTRONICS S.r.l.
    Inventors: Sebastiano AMARA, Fernando Giovanni MENTA, Salvatore PISANO
  • Insulated gate semiconductor device with optimized breakdown voltage, and manufacturing method thereof
    Patent number: 8829609
    Abstract: An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: September 9, 2014
    Assignee: STMicroelectronics S.r.l.
    Inventors: Donato Corona, Giovanni Samma Trice, Sebastiano Amara, Salvatore Pisano, Antonio Giuseppe Grimaldi
  • INSULATED GATE SEMICONDUCTOR DEVICE WITH OPTIMIZED BREAKDOWN VOLTAGE, AND MANUFACTURING METHOD THEREOF
    Publication number: 20130026536
    Abstract: An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Giovanni Sammatrice, Sebastiano Amara, Salvatore Pisano, Antonio Giuseppe Grimaldi