Abstract: An illuminating panel includes a support holding an integrated illumination. The integrated illumination is an illuminating textile including woven optical fibers coupled to light sources. The optical fibers emit light under an angle suitable for enlightening an adjacent surface substantially perpendicular to the plane of the illuminating panel.

Abstract: The invention relates to a luminescent material comprising a face coated with a textured layer, the texture of said layer comprising identical features distributed uniformly over said face, said layer decreasing the angle of the extraction cone of light emitted by said luminescent material and passing through said face. The luminescent material may be of the scintillator type or of the wavelength converter type.

Abstract: A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material, by ion erosion, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple oxide or a mixed oxide of one or more elements, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the one or more elements of the oxide, a molar percentage of the species in the material ranging from 6 mol % up to 50 mol % while remaining below the percentage of the oxide, most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the erosion; structuring the surface of the hybrid material with an erosion that lasts less than one hour over an erosion area greater than 1 cm2, until the array of features is formed, the

Abstract: A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material by reactive-ion etching, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple silicon oxide or a mixed silicon oxide, most of the oxides in the case of a mixed oxide being silicon oxide, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the silicon of the oxide, a molar percentage of the species in the material ranging from 1 mol % or even up to 50 mol % while remaining below the percentage of the silicon oxide, at least most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the etching; structuring the surface of the hybrid material, without masking, with etching that lasts less t

Abstract: A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material, by ion erosion, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple oxide or a mixed oxide of one or more elements, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the one or more elements of the oxide, a molar percentage of the species in the material ranging from 6 mol % up to 50 mol % while remaining below the percentage of the oxide, most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the erosion; structuring the surface of the hybrid material with an erosion that lasts less than one hour over an erosion area greater than 1 cm2, until the array of features is formed, the

Abstract: A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material by reactive-ion etching, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple silicon oxide or a mixed silicon oxide, most of the oxides in the case of a mixed oxide being silicon oxide, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the silicon of the oxide, a molar percentage of the species in the material ranging from 1 mol % or even up to 50 mol % while remaining below the percentage of the silicon oxide, at least most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the etching; structuring the surface of the hybrid material, without masking, with etching that lasts less t