Patents by Inventor Sei Tsunoda

Sei Tsunoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7192540
    Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: March 20, 2007
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Publication number: 20060091382
    Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
    Type: Application
    Filed: December 6, 2005
    Publication date: May 4, 2006
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Patent number: 7029605
    Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: April 18, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Patent number: 6468698
    Abstract: To provide a practical thin type lithium ion secondary battery having a excellent safety and charge-discharge properties. A lithium ion secondary battery comprising a positive electrode 1, a negative electrode 4, a separator 7 retaining an electrolytic solution, and an adhesive resin layer 8 which connects said positive electrode 1 and negative electrode 4 to said separator 7, characterized in that said adhesive resin layer 8 comprises a polyvinylidene fluoride and an ionically-conducting polymer compound incorporated therein.
    Type: Grant
    Filed: January 27, 1998
    Date of Patent: October 22, 2002
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kouji Hamano, Sei Tsunoda, Yasuhiro Yoshida, Michio Murai, Takayuki Inuzuka, Shigeru Aihara, Hisashi Shiota
  • Patent number: 6458483
    Abstract: A lithium ion secondary battery having an electrode body including a positive electrode made of a positive electrode active material layer joined to a current collector, a negative electrode made of a negative electrode active material layer joined to a current collector, a separator which is disposed between the positive electrode and the negative electrode and retains an electrolytic solution containing lithium ions, and a porous adhesive resin layer which retains the electrolytic solution and joins the separator to at least one of the positive electrode active material layer and to the negative electrode active material layer, the electrode body being sealed into a packaging bag, wherein an adhesive resin film capable of absorbing the electrolytic solution and gelling adheres the electrode body to the packaging bag.
    Type: Grant
    Filed: April 27, 2000
    Date of Patent: October 1, 2002
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kouji Hamano, Osamu Hiroi, Yasuhiro Yoshida, Shoji Yoshioka, Hisashi Shiota, Makiko Kise, Shigeru Aihara, Daigo Takemura, Jun Aragane, Hiroaki Urushibata, Sei Tsunoda
  • Patent number: 6458719
    Abstract: There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most3 2.4.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: October 1, 2002
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Publication number: 20020063338
    Abstract: A semiconductor device comprises a first insulating layer having a first copper wiring, a second insulating layer having a via of copper communicating with the first copper wiring, a third insulating layer having a second copper communicating with the via, and wherein either of the insulating layers is made of a material containing boron and nitrogen as a main component. Diffusion of copper into the insulating layer is prevented and, at the same time, wiring capacitance is reduced so that a high speed operation of the semiconductor device is enabled.
    Type: Application
    Filed: December 11, 2001
    Publication date: May 30, 2002
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Noboru Mikami, Sei Tsunoda, Hideharu Nobutoki
  • Publication number: 20020058142
    Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.
    Type: Application
    Filed: August 31, 2001
    Publication date: May 16, 2002
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Publication number: 20020053653
    Abstract: There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising boron, nitrogen, and hydrogen, wherein the number of the nitrogen atom is 0.7 to 1.3 and the number of the hydrogen atom is 1.0 to 2.2 based on one boron atom, and of which dielectric constant is at most 3 2.4.
    Type: Application
    Filed: August 30, 2001
    Publication date: May 9, 2002
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
  • Patent number: 5834147
    Abstract: A photosensitive member for electrophotography having excellent electrophotographic characteristics such as chargeability, photosensitivity and dark attenuation, excellent corona resistance and excellent durability, which comprises an electrically conductive support and a photosensitive layer containing a resin binder and particles of a photoconductive phthalocyanine compound dispersed in said binder, said photosensitive layer containing at least one member selected from the group consisting of an electron acceptive material, a coupling agent, an antioxidant and a hydroxyl group-containing polymer.
    Type: Grant
    Filed: August 2, 1996
    Date of Patent: November 10, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Suguru Nagae, Kazuko Wakita, Toshio Kobayashi, Yoshimi Sugimoto, Sei Tsunoda, Kikuo Hayama, Koe Enmanji
  • Patent number: 5665503
    Abstract: A positive charge type organic photoconductor in which the surface of the photoconductor having a film thickness of from 10 to 30 .mu.m and containing at least from 15 to 40% by weight of a phthalocyanine type photoconductive compound in a resin binder, is treated with a reactive monomer or oligomer capable of extinguishing ionic active and radical active parts.
    Type: Grant
    Filed: August 12, 1994
    Date of Patent: September 9, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Sei Tsunoda, Toshio Kobayashi, Shigeo Tsuda, Kikuo Hayama, Hiromi Yamada
  • Patent number: 5164287
    Abstract: A photochromic material containing a copolymer of a spirobenzothiopyran derivative prepolymer and a liquid crystal prepolymer. In addition, a rewritable optical recording medium using the photochromic material. A rewritable optical recording medium obtained by coating a dispersed material, which is obtained by uniformly dispersing a spirobenzothiopyran derivative compound in a thermoplastic resin, on a substrate. A photochromic material capable of controlling a colored state and a decolorized state in a photon mode or a heat mode using an ultraviolet light source and a near-infrared light source. A rewritable optical recording medium capable of rewriting an information in a photon mode using a semiconductor laser.
    Type: Grant
    Filed: February 14, 1991
    Date of Patent: November 17, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Suguru Nagae, Sei Tsunoda, Kenji Nomura, Kazuhiko Tsutsumi, Yoshiyuki Nakaki