Abstract: A mobility measuring apparatus includes a storage unit that respectively stores a relationship between the mobility ? of carriers in a semiconductor and a decay constant ? of the carriers and a relationship between a reflectivity R of the semiconductor to a terahertz light and the decay constant ? of the carriers, a light radiating unit that radiates a terahertz light to the semiconductor as a sample, a detecting unit that detects a reflected light of the sample to the radiated terahertz light, a reflectivity calculating unit that calculates the reflectivity Rexp of the sample by determining a ratio of an intensity of the reflected light relative to an intensity of the radiated terahertz light, an obtaining unit that obtains the decay constant ?exp of the sample corresponding to the reflectivity Rexp of the sample by making reference to the stored relationship between the reflectivity R and the decay constant ? of the carriers, and a mobility calculating unit that calculates the mobility ?exp of the sample fr

Abstract: A nondestructive carrier concentration measuring device (100) includes: a storage unit (101) that stores a correlation between the reflectance of an inorganic compound semiconductor against terahertz light and a carrier concentration; a light radiation unit (103) that irradiates the terahertz light (105) to the inorganic compound semiconductor as a sample; a detection unit (109) that detects reflected light (108) of the inorganic compound semiconductor against the irradiated terahertz light (105); a reflectance calculation unit (111) that compares the irradiated terahertz light (105) with the reflected light (108) and calculates an actual measurement value of the reflectance of the inorganic compound semiconductor; and a read unit (113) that refers to the stored correlation and reads the carrier concentration of the sample corresponding to the actual measurement value of the reflectance.

Abstract: A mobility measuring apparatus includes a storage unit that respectively stores a relationship between the mobility ? of carriers in a semiconductor and a decay constant ? of the carriers and a relationship between a reflectivity R of the semiconductor to a terahertz light and the decay constant ? of the carriers, a light radiating unit that radiates a terahertz light to the semiconductor as a sample, a detecting unit that detects a reflected light of the sample to the radiated terahertz light, a reflectivity calculating unit that calculates the reflectivity Rexp of the sample by determining a ratio of an intensity of the reflected light relative to an intensity of the radiated terahertz light, an obtaining unit that obtains the decay constant ?exp of the sample corresponding to the reflectivity Rexp of the sample by making reference to the stored relationship between the reflectivity R and the decay constant ? of the carriers, and a mobility calculating unit that calculates the mobility ?exp of the sample fr

Abstract: A nondestructive carrier concentration measuring device (100) includes: a storage unit (101) that stores a correlation between the reflectance of an inorganic compound semiconductor against terahertz light and a carrier concentration; a light radiation unit (103) that irradiates the terahertz light (105) to the inorganic compound semiconductor as a sample; a detection unit (109) that detects reflected light (108) of the inorganic compound semiconductor against the irradiated terahertz light (105); a reflectance calculation unit (111) that compares the irradiated terahertz light (105) with the reflected light (108) and calculates an actual measurement value of the reflectance of the inorganic compound semiconductor; and a read unit (113) that refers to the stored correlation and reads the carrier concentration of the sample corresponding to the actual measurement value of the reflectance.