Abstract: A bi-directional DC-DC converter uses a transformer for both step-down and step-up operations. A switching frequency for operating a switching device is set separately for the step-down and step-up operations. When, for example, the switching frequency during the step-up operation is lower than the switching frequency during the step-down operation, the range in which the duty ratio in PWM control can be controlled is widened, compensating for step-up ratio insufficiency. Conversely, step-down ratio insufficiency is compensated for by making the switching frequency during the step-down operation lower than the switching frequency during the step-up operation.

Abstract: A bi-directional DC-DC converter uses a transformer for both step-down and step-up operations. A switching frequency for operating a switching device is set separately for the step-down and step-up operations. When, for example, the switching frequency during the step-up operation is lower than the switching frequency during the step-down operation, the range in which the duty ratio in PWM control can be controlled is widened, compensating for step-up ratio insufficiency. Conversely, step-down ratio insufficiency is compensated for by making the switching frequency during the step-down operation lower than the switching frequency during the step-up operation.

Abstract: A bi-directional DC-DC converter uses a transformer for both step-down and step-up operations. A switching frequency for operating a switching device is set separately for the step-down and step-up operations. When, for example, the switching frequency during the step-up operation is lower than the switching frequency during the step-down operation, the range in which the duty ratio in PWM control can be controlled is widened, compensating for step-up ratio insufficiency. Conversely, step-down ratio insufficiency is compensated for by making the switching frequency during the step-down operation lower than the switching frequency during the step-up operation.

Abstract: The DC-DC converter connects a first and a second switching circuit for converting power mutually between direct current and alternating current respectively to a first DC power source and a second DC power source and has a transformer between the AC terminals thereof. Here, between the AC terminals of the second switching circuit and the negative pole terminal of the DC power source, a voltage clamp circuit composed of a series unit of switching devices with a reverse parallel diode and a clamp condenser is connected. An isolated bidirectional DC-DC converter which prevents a reduction in a circulating current at time of buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization is provided.

Abstract: A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.

Abstract: An ignitor comprising a circuit with a millisecond order time constant and with a minimum circuit size and area, which is capable of self-shutdown without leading to erroneous ignition upon detection of an abnormality. An ignitor 1 capable of self-shutdown upon detection of an abnormality comprises an abnormality detection circuit 12 whose rise output is applied to the gate of a self-shutdown MOSFET 33 via an integration circuit 33 comprised of a diode 8 and a capacitor 9. The gate voltage of IGBT 5a, which is a main-current switching device, can be decremented.

Abstract: The inventive bi-directional DC-DC converter addresses a problem of an insufficient step-up ratio during the step-up operation that is caused when a turns ratio of the transformer is determined to, for example, match the step-up operation and also address a contrary problem of an insufficient step-down ratio during the step-down operation that is caused when a turns ratio is determined to match the step-up operation. In the inventive bi-directional DC-DC converter that uses a transformer for both step-down and step-up operations, a switching frequency for operating a switching device is set separately for the step-down and step-up operations. For example, when the switching frequency during the step-up operation is lower than the switching frequency during the step-down operation, the range in which the duty ratio in PWM control can be controlled is widened, compensating for step-up ratio insufficiency.

Abstract: A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.

Abstract: A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.

Abstract: The DC-DC converter connects a first and a second switching circuit for converting power mutually between direct current and alternating current respectively to a first DC power source and a second DC power source and has a transformer between the AC terminals thereof. Here, between the AC terminals of the second switching circuit and the negative pole terminal of the DC power source, a voltage clamp circuit composed of a series unit of switching devices with a reverse parallel diode and a clamp condenser is connected. An isolated bidirectional DC-DC converter which prevents a reduction in a circulating current at time of buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization is provided.

Abstract: An ignitor comprising a circuit with a millisecond order time constant and with a minimum circuit size and area, which is capable of self-shutdown without leading to erroneous ignition upon detection of an abnormality. An ignitor 1 capable of self-shutdown upon detection of an abnormality comprises an abnormality detection circuit 12 whose rise output is applied to the gate of a self-shutdown MOSFET 33 via an integration circuit 33 comprised of a diode 8 and a capacitor 9. The gate voltage of IGBT 5a, which is a main-current switching device, can be decremented.

Abstract: A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.

Abstract: Wire bonding or printed wiring board leads or, alternatively, lead frames or equivalents thereof are used to electrically connect external electrodes of high withstand voltage capacitors formed on a plurality of semiconductor chips. A driver circuit for signal transmission or receiver circuit for signal receipt formed on the semiconductor chips are electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing the plurality of semiconductor chips to be received within either a single package or a single module. Using this arrangement, a semiconductor device is capable of achieving both dielectricity and size reduction.

Abstract: Wire bonding or printed wiring board leads or, alternatively, lead frames or equivalents thereof are used to electrically connect external electrodes of high withstand voltage capacitors formed on a plurality of semiconductor chips. A driver circuit for signal transmission or receiver circuit for signal receipt formed on the semiconductor chips are electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing the plurality of semiconductor chips to be received within either a single package or a single module. Using this arrangement, a semiconductor device is capable of achieving both dielectricity and size reduction.

Abstract: Wire bonding or printed wiring board leads or, alternatively, lead frames or equivalents thereof are used to electrically connect external electrodes of high withstand voltage capacitors formed on a plurality of semiconductor chips. A driver circuit for signal transmission or receiver circuit for signal receipt formed on the semiconductor chips are electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing the plurality of semiconductor chips to be received within either a single package or a single module. Using this arrangement, a semiconductor device is capable of achieving both dielectricity and size reduction.

Abstract: The hardware of an over-sampling A/D and D/A converter is provided, which hardware is capable of being operated with either kind of software: one corresponding to a first method in which the over-sampling ratio is fixed and the other corresponding to a second method in which the over-sampling ratio is variable. The value N3 written on the pseudo-frequency-dividing-ratio-register 11 and the value N4 written on the pseudo-over-sampling-ratio-register 21 are converted through a user interface into the frequency dividing ratio N1 by the conversion circuit 12 and the converted result is written in the frequency-dividing-ratio-register 10.

Abstract: There is disclosed a method of narrowing a focus of a powerful electromagnetic wave such as excimer laser toward a capacitor formed in a glass substrate, and adjusting and trimming a change amount of crystallized glass formed in this portion in a limited manner. A capacity value can be trimmed without influencing an outer configuration and other peripheral components, a circuit board whose property is unchanged and whose dispersion is little can be manufactured, and the capacity value can more precisely be adjusted by trimming an exclusive-use capacitor.

Abstract: Wire bonding or printed wiring board leads or alternatively lead frames or equivalents thereof are used to electrically connect among external electrodes of high withstand voltage capacitors as formed on a plurality of semiconductor chips. A driver circuitry for signal transmission or receiver circuitry for signal receipt being formed on the semiconductor chips is electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing said plurality of semiconductor chips to be received within either a single package or a single module. Whereby a semiconductor device is capable of achieving both dielectricity and size reduction.

Abstract: In a semiconductor device, an imbedded insulating layer is formed in a semiconductor substrate. A plurality of electric circuits are formed on the imbedded insulating layer so as to be insulated each other, and are capacitively coupled through the semiconductor substrate. Wiring layers are formed on the electric circuits, and include inside electrodes which are capacitively coupled to the electric circuits. The electric circuits are connected through capacitors which are formed through the semiconductor substrate, and through capacitors which are formed through the electrodes.

Abstract: A small sized semiconductor device having a high insulating performance between a primary side circuit and a secondary side circuit is realized. A circuit region 2, plural first and second terminal electrodes 5 connected to the circuit region 3, and an insulation-separation region 4 for separating electrically the first terminal electrodes from the second terminal electrodes, and for transmitting signals between the first and the second terminal electrodes are formed onto a semiconductor chip 1, and the insulation-separation region 4 is provided between the first and second terminal electrodes. The interval between the first and the second terminal electrodes on the same semiconductor chip can be separated with high insulating performance.