Patents by Inventor Seiichi Shirai

Seiichi Shirai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inverter with incorporated filter circuit and improved component cooling arrangement
    Patent number: 5905647
    Abstract: An inverter includes an inverter circuit, a rectifier circuit, a filter circuit including an input side capacitor, a coil, and an output side capacitor, the filter circuit being disposed at a front stage of the rectifier circuit, a casing accommodating the inverter circuit, the rectifier circuit and the filter circuit, a first cooling chamber defined in the casing, a second cooling chamber defined in the casing and partitioned by a partition wall from the first cooling chamber so as to be adjacent to it, a plurality of vent holes formed in the partition wall, and a fan for supplying a cooling air into the first cooling chamber and further via the vent holes into the second cooling chamber. The inverter circuit is cooled by the cooling air flowing into the first cooling chamber and the coil of the filter circuit is cooled by the cooling air flowing through the second cooling chamber.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: May 18, 1999
    Assignees: Kabushiki Kaisha Toshiba, Schneider Electric.S.A.
    Inventor: Seiichi Shirai
  • Thin film silicon semiconductor device and process for producing thereof
    Patent number: 5248630
    Abstract: A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
    Type: Grant
    Filed: March 26, 1992
    Date of Patent: September 28, 1993
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tadashi Serikawa, Seiichi Shirai, Akio Okamoto, Shirou Suyama
  • Thin film silicon semiconductor device and process for producing thereof
    Patent number: 5132754
    Abstract: A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: July 21, 1992
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tadashi Serikawa, Seiichi Shirai, Akio Okamoto, Shirou Suyama