Abstract: Such a semiconductor light-emitting device (10, 30, 40) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element (1, 31) and a thin-film light diffusion portion (8, 8a, 38, 41) arranged on a light-emitting direction side of the semiconductor light-emitting element.

Abstract: This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip, a sealing member and a window member. The semiconductor laser chip is sealed with the base portion, the sealing member and the window member. At least two of the base portion, the sealing member and the window member are bonded to each other through a sealant made of an ethylene-polyvinyl alcohol copolymer.

Abstract: In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the semiconductor device structure and the pair of side surfaces of the partial substrate to be respectively spaced apart from each other by a predetermined distance in a direction perpendicular to the pair of side surfaces of the semiconductor device structure. On the partial substrate, current blocking layers are formed in a region between the pair of side surfaces of the partial substrate and the pair of side surfaces of the semiconductor device structure.

Abstract: A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.

Abstract: Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: Such a semiconductor light-emitting device (10, 30, 40) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element (1, 31) and a thin-film light diffusion portion (8, 8a, 38, 41) arranged on a light-emitting direction side of the semiconductor light-emitting element.

Abstract: A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.

Abstract: A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).

Abstract: A light emitting device includes a light emitting element which emits light with a first wavelength; and a light emitting conversion unit for converting the light with the first wavelength by using wavelength conversion materials including a short wavelength conversion material and a long wavelength conversion material, the short wavelength conversion material being that which emits light with a second wavelength longer in wavelength than the light with the first wavelength, by absorbing the light with the first wavelength, and the long wavelength conversion material being that which emits light with a wavelength longer than the second wavelength by absorbing the light with the first wavelength.

Abstract: In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the semiconductor device structure and the pair of side surfaces of the partial substrate to be respectively spaced apart from each other by a predetermined distance in a direction perpendicular to the pair of side surfaces of the semiconductor device structure. On the partial substrate, current blocking layers are formed in a region between the pair of side surfaces of the partial substrate and the pair of side surfaces of the semiconductor device structure.

Abstract: A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.

Abstract: A fluorescent substance containing resin fills a container in a light emitting apparatus so as to cover a light emitting device and a spacer. In a region where the power of light emitted from the light emitting device is high, the volume of the first fluorescent element containing a blue light emitting fluorescent material is large. In a region where the power of the emitted light is low, the volume of a second fluorescent element containing a green light emitting fluorescent material and a red light emitting fluorescent material is large.

Abstract: Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

Abstract: An LED device includes; an LED chip, a first layer provided on the LED chip, a second layer provided on the first layer, and a third layer provided on the second layer. The first layer has a refractive index n1. The second layer has a refractive index n2, and includes phosphors emitting fluorescence light by absorption of excitation light emitted from the LED chip. The third layer has a refractive index n3. The refractive index n2 is larger than the refractive index n3.

Abstract: A light emitting device includes a light emitting element which emits light with a first wavelength; and a light emitting conversion unit for converting the light with the first wavelength by using wavelength conversion materials including a short wavelength conversion material and a long wavelength conversion material, the short wavelength conversion material being that which emits light with a second wavelength longer in wavelength than the light with the first wavelength, by absorbing the light with the first wavelength, and the long wavelength conversion material being that which emits light with a wavelength longer than the second wavelength by absorbing the light with the first wavelength.

Abstract: A semiconductor light emitting apparatus includes a packaging member, a light-emitting element mounted in the packaging member and a wavelength changer. The wavelength changer which absorbs the light from the light-emitting element and emits a wavelength-converted light. The wavelength changer includes inorganic fluorescent material and organic fluorescent material.