Abstract: According to an embodiment of the present invention, a plasma processing apparatus includes: a processing chamber in which plasma processing is performed to a sample; a radio frequency power source that supplies radio frequency power for generating plasma in the processing chamber; and a data processing apparatus that performs processing to light emission data of the plasma. The data processing apparatus performs the processing to the light emission by using an adaptive double exponential smoothing method for varying a smoothing parameter based on an error between input data and a predicted value of smoothed data. A response coefficient of the smoothing parameter is derived by a probability density function including the error as a parameter.

Abstract: A diffractive optical element includes: a first material layer that has a diffractive grating shape; and a second material layer that is laminated on the first material layer, the diffractive grating shape forming a plurality of concentric annular ring zones in a plan view from a lamination direction of the first material layer and the second material layer, and a radius of an innermost first ring zone among the plurality of ring zones is less than any one of distances between the ring zones.

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Abstract: An etching method includes (a) disposing a substrate having a silicon oxide film on a substrate support in a chamber. The substrate includes a plurality of etching stop layers arranged inside the silicon oxide film. The plurality of etching stop layers are arranged at different positions in a thickness direction of the silicon oxide film. Each of the plurality of etching stop layers is formed of at least one of tungsten and molybdenum. The etching method (b) supplying a processing gas into the chamber, the processing gas including a gas containing at least one of tungsten and molybdenum, a gas containing carbon and fluoride, and an oxygen-containing gas; and (c) generating plasma from the processing gas to etch the silicon oxide film, thereby forming a plurality of recesses that reach the plurality of etching stop layers, respectively, in the silicon oxide film.

Abstract: Provided is a highly reliable fuel cell that improves power generation efficiency of the fuel cell and that is less likely to cause damage to an electrode and an electrolyte film. The fuel cell includes a support substrate (2, 3) having a region in which a support portion having a mesh-like shape in a plan view is provided, a first electrode 4 on the support substrate, an electrolyte film 5 on the first electrode, and a second electrode 6 on the electrolyte film. The first electrode includes a first thin film electrode 4A formed in a manner of covering at least the region, and a first mesh-like electrode 4B connected to the first thin film electrode and provided corresponding to the support portion. The first mesh-like electrode 4B has a film thickness larger than that of the first thin film electrode and has a mesh-like shape in a plan view.

Abstract: The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

Abstract: Provided is a solid oxide fuel cell having high power generation efficiency and being operable at low temperature. A fuel cell of the present invention includes a cathode electrode, an anode electrode, and a solid electrolyte layer disposed between the cathode electrode and the anode electrode and formed from polycrystalline zirconia or polycrystalline ceria doped with divalent or trivalent positive ions and having proton conductivity, in which the cathode electrode and the solid electrolyte layer are stacked with a first oxygen ion blocking layer interposed therebetween.

Abstract: Provided is a highly reliable fuel cell that improves power generation efficiency of the fuel cell and that is less likely to cause damage to an electrode and an electrolyte film. The fuel cell includes a support substrate (2, 3) having a region in which a support portion having a mesh-like shape in a plan view is provided, a first electrode 4 on the support substrate, an electrolyte film 5 on the first electrode, and a second electrode 6 on the electrolyte film. The first electrode includes a first thin film electrode 4A formed in a manner of covering at least the region, and a first mesh-like electrode 4B connected to the first thin film electrode and provided corresponding to the support portion. The first mesh-like electrode 4B has a film thickness larger than that of the first thin film electrode and has a mesh-like shape in a plan view.

Abstract: An object of the invention is to provide: an alloy article that has excellent homogeneity in the alloy composition and microstructure as well as significant shape controllability, using an HEA with significant mechanical strength and high corrosion resistance; a method for manufacturing the alloy article; and a product using the alloy article. There is provided an alloy article comprising: Co, Cr, Fe, Ni, and Ti elements, each element in content of 5 to 35 atomic %; more than 0 atomic % to 8 atomic % of Mo %; and remainder substances of unavoidable impurities. And, ultrafine particles with an average diameter of 40 nm or less are dispersedly precipitated in matrix phase crystals of the alloy article.

Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Abstract: A nanocrystal production method includes a light irradiation step of applying light to a surface of a metal material immersed in water to form nanocrystals on the surface. In this nanocrystal production method, the metal material contains iron, the nanocrystal contains at least one of iron oxide and iron hydroxide, and in the spectrum of the light, a wavelength at which the intensity is maximum is not less than 360 nm and less than 620 nm.

Abstract: There is provision of a method for etching a substrate above which a first underlying film, a second underlying film positioned deeper than the first underlying film, a silicon oxide film formed on the first and second underlying films, and a mask on the silicon oxide film are provided. In the mask, first and second openings are formed above the first and second underlying films respectively. After the first underlying film is exposed by etching the silicon oxide film using a first gas, the silicon oxide film is etched by using a second gas while depositing deposits on the first underlying film, and the silicon oxide film is etched by using a third gas while removing the deposits on the first underlying film. The etching using the second gas and the etching using the third gas are repeated multiple times.