Abstract: According to the present disclosure, a photoelectric conversion film includes a plurality of semiconductor nanoparticles and a matrix phase provided around each of the plurality of semiconductor nanoparticles. The matrix phase includes a principal phase including a composite, which includes an organic molecule polymer and an inorganic material. A photoelectric conversion device includes a transparent electrically conductive film, a photoelectric conversion layer, a semiconductor substrate, and an electrode layer, which are layered on a glass substrate in this order. The photoelectric conversion layer includes the photoelectric conversion film.

Abstract: According to the present disclosure, a photoelectric conversion film includes a plurality of semiconductor nanoparticles and a matrix phase provided around each of the plurality of semiconductor nanoparticles. The matrix phase includes a principal phase including a composite, which includes an organic molecule polymer and an inorganic material. A photoelectric conversion device includes a transparent electrically conductive film, a photoelectric conversion layer, a semiconductor substrate, and an electrode layer, which are layered on a glass substrate in this order. The photoelectric conversion layer includes the photoelectric conversion film.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer. The light-absorbing layer includes a plurality of crystalline grains. The grains contain a Group I-III-VI chalcopyrite compound semiconductor. The light-absorbing layer contains oxygen and an average atomic concentration of oxygen at grain boundaries of the light-absorbing layer is larger than the average atomic concentration of oxygen in the grains of the light-absorbing layer.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract: It is aimed to provide a photoelectric conversion device having improved conversion efficiency, and a method for manufacturing the photoelectric conversion device. For achieving this object, a photoelectric conversion device including a first semiconductor layer and a second semiconductor layer is employed. In the photoelectric conversion device, the first semiconductor layer includes one principal surface on which a plurality of projections are scattered, includes a I-III-VI group compound semiconductor, and has a first conductivity type. The second semiconductor layer is disposed on the one principal surface, has a thickness in a normal direction of the one principal surface, and has a second conductivity type different from the first conductivity type. Further, a first distance along which each of the projections is projected in the normal direction is longer than a second distance along which the second semiconductor layer is provided in the normal direction.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, a chalcogen organic compound and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the chalcogen organic compound. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed.

Abstract: The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.