Abstract: A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

Abstract: A three-dimensional measurement device includes a plurality of light source units configured to irradiate the object to be measured with measurement light having predetermined patterns, an image capture unit configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured based on results of image capture performed by the image capture unit. The predetermined patterns of the measurement light include stripe patterns, respectively. The stripe patterns radiated from the plurality of light source units have respective patterns different from each other. The plurality of light source units are arrayed in a direction parallel to stripes in the stripe patterns. The measurement unit measures the three-dimensional shape of the object to be measured based on a three-dimensional shape measurement method using the stripe pattern.

Abstract: A smell detection device includes an ion sensor having a sensitive film and outputting an output signal in accordance with a potential change of the sensitive film, a substance adsorption film disposed on the sensitive film and changing its state by adsorbing a smell substance to be detected to cause the potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

Abstract: An ion detection device includes an ion sensor having a sensitive film immersed in an aqueous solution and outputting an output signal in accordance with a potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

Abstract: A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

Abstract: A radiation detector includes a substrate including a first electrode portion, a radiation absorption layer disposed on one side with respect to the substrate and configured of a plurality of perovskite crystals, and a second electrode portion disposed on the one side with respect to the radiation absorption layer and being opposite to the first electrode portion with the radiation absorption layer interposed therebetween. Each of the plurality of perovskite crystals is formed to extend with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a longitudinal direction in a region between the first electrode portion and the second electrode portion in the radiation absorption layer.

Abstract: An ion concentration distribution measurement device includes a unit detection element for outputting charges of an amount according to an ion concentration, and an integration circuit for outputting a signal value according to the amount of charges which are output from the unit detection element. The unit detection element includes a MOS transistor, an ion sensitive portion, a first capacitive portion, and a transfer switch. The integration circuit includes an amplifier, a second capacitive portion, and a reset switch.

Abstract: An ion concentration distribution measurement device includes a unit detection element for outputting charges of an amount according to an ion concentration, and an integration circuit for outputting a signal value according to the amount of charges which are output from the unit detection element. The unit detection element includes a MOS transistor, an ion sensitive portion, a first capacitive portion, and a transfer switch. The integration circuit includes an amplifier, a second capacitive portion, and a reset switch.

Abstract: In a signal processing device of an embodiment, an integration circuit accumulates a charge from a photodiode in an integrating capacitor element, and outputs a voltage value according to the amount of charge. A comparator circuit, when the voltage value from the integration circuit has reached a reference value, outputs a saturation signal. A charge injection circuit, in response to the saturation signal, injects an opposite polarity of charge into the integrating capacitor element. A counter circuit performs counting based on the saturation signal. A holding circuit holds the voltage value from the integration circuit. An amplifier circuit outputs a voltage value that is K times (where K>1) larger than the voltage value held by the holding circuit. An A/D converter circuit sets a voltage value that is K times larger than the reference value as the maximum input voltage value, that is, a full-scale value, and outputs a digital value corresponding to the voltage value from the amplifier circuit.

Abstract: A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials ?TX1, ?TX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers ?BG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier ?BG to carriers as a higher output of a background light is detected by a photodetector.

Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.

Abstract: A solid-state imaging device 1 includes N pixel sections 101 to 10N, transimpedance circuits 20a and 20b, integrating circuits 30a and 30b, and a difference arithmetic circuit 40. Each pixel section 10n includes a photoelectric converting circuit including a photodiode, and a first holding circuit and a second holding circuit which hold an output voltage of the photoelectric converting circuit. A voltage held by the first holding circuit of each pixel section 10n is input into the difference arithmetic circuit 40 through a common wire 50a, the transimpedance circuit 20a, and the integrating circuit 30a. A voltage held by the second holding circuit of each pixel section 10n is input into the difference arithmetic circuit 40 through a common wire 50b, the transimpedance circuit 20b, and the integrating circuit 30b. A voltage corresponding to a difference between the voltages output from the integrating circuits 30a and 30b, respectively, is output from the difference arithmetic circuit 40.

Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: The present invention relates to a sensor apparatus having a structure capable of obtaining digital values of signal components with a high accuracy using an A/D conversing circuit with the outputted digital value thereof having a small number of expressive bits. In the sensor apparatus, a voltage value corresponding to the amount of incident light to a photodiode is held by a holding circuit through an integrating circuit and a CDS circuit. Meanwhile, a voltage value corresponding to the amount of incident light to an adjacent photodiode is held by another holding circuit through an integrating circuit and a CDS circuit. The voltage values held by the respective different holding circuits are inputted to a subtracting circuit through different paths. The subtracting circuit outputs a voltage value corresponding to the difference between the two inputted voltage values. In an A/D converting section, the difference voltage outputted from the subtracting circuit is converted into a digital value.

Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: A determination unit 70 determines whether there is incident light, based on an output value from an integrating circuit 62, and generates a determinated signal indicating a determinated result. A control unit 80 controls charge accumulating portions of an imaging light-receiving unit 10 whether or not to start accumulation of an electric charge, based on the determinated signal, and changes a charge accumulation capacitance value of the integrating circuit 62 of an output unit 60. Specifically, the control unit 80 varies the capacitance value for accumulation of an electric charge generated in a trigger light-receiving unit 20, depending upon the detection result on the presence/absence of incident light, to switch the sensitivity of the integrating circuit 62 to the trigger PD, thereby enabling optimal utilization of the trigger PD.

Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: The present invention relates to, for example, an image pickup system having a structure capable of imaging a subject at a low power consumption and a low cost even when the subject may be dark. The image pickup system comprises an image pickup device, a peak position detecting section, a partial image acquiring section, and a partial image operating section. The image pickup device outputs image data that represents the two-dimensional intensity distribution of light incident on a photodetecting section, and outputs light intensity profile data that represents the one-dimensional intensity distribution of the incident light in each of first and second directions in the photodetecting section. The peak position detecting section detects a light intensity peak position in the two-dimensional intensity distribution of the light incident on the photodetecting section in the image pickup device, based on the light intensity profile data outputted from the image pickup device.