Abstract: The present invention provides a silicone composition for use in a printing plate, the composition including at least: a SiH group-containing compound; a compound represented by the following general formula (I); a compound represented by the following general formula (II); and/or a compound represented by the following general formula (III); wherein Ds in the compound represented by the general formula (I), Gs in the compound represented by the general formula (II) and Js in the compound represented by the general formula (III) each represents an acetoxy group or a dialkyloximino group: A-Si-(D)3 (I) (wherein in the general formula (I), A represents a non-hydrolyzable functional group capable of undergoing a hydrosilylation reaction with a SiH group); E-Si-(G)3 (II) (wherein in the general formula (II), E represents a non-hydrolyzable functional group incapable of undergoing a hydrosilylation reaction with a SiH group); and Si-(J)4 (III).

Abstract: An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

Abstract: Provided is a lithographic ink having superior surface staining resistance and fluidity. Also provided is a method for manufacturing a printed material using the lithographic ink. The lithographic ink has all of a viscosity (A) at a rotational speed of 0.5 rpm, a viscosity (B) at a rotational speed of 20 rpm, and a viscosity (C) at a rotational speed of 50 rpm of 5 Pa·s or more and 100 Pa·s or less, the viscosities (A), (B), and (C) being measured by using a cone-plate rotating viscometer at 25° C., and has a viscosity ratio (C)/(B) of 0.8 or more and 1.0 or less.

Abstract: A lithographic ink which has a highly sensitive curability for active energy beam simultaneously with a high washability with water, and which also has excellent resistance to surface staining in the printing and high water resistance of the cured film is provided. Also provided are a varnish for such lithographic ink and a method for producing printed material. The lithographic ink comprises (a) a pigment and (b) a resin having an ethylenically unsaturated group and a hydrophilic group, and it has a highly sensitive curability for active energy beam simultaneously with a high washability with water, and also, excellent resistance to surface staining in the printing and high water resistance of the cured film.

Abstract: An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.

Abstract: Provided is a capacitor that has good bonding between the dielectric layer and the conductive layer, has a characteristic of low ESR, and keeps leak current suppressed. The capacitor contains a dielectric layer and a conductive film and is characterized in that the dielectric layer contains an organic compound and a metal compound and that the conductive film contains a conductive material and an organic compound.

Abstract: The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.

Abstract: An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.

Abstract: The present invention provides a planographic printing plate original including, in the order mentioned below: a substrate; and at least a heat sensitive layer and a silicone rubber layer provided on the substrate, wherein the heat sensitive layer contains a polyurethane having a carbonate structure. The present invention also provides a method of producing a planographic printing plate using the same, and a method of producing a printed matter. An object of the present invention is to provide: a planographic printing plate original which has an excellent halftone dot reproducibility and printing durability, and in which the occurrence of scumming can be prevented; a method of producing a planographic printing plate using the same; and a method of producing a printed matter.

Abstract: A p-type impurity diffusion composition is provided which makes it possible to improve storage stability of a coating liquid, and to achieve uniform diffusion of the coating liquid on a semiconductor substrate. The p-type impurity diffusion composition includes (A) a group-13 element compound, (B) a hydroxyl-group-containing polymer, and (C) an organic solvent, (Cl) a cyclic ester solvent being contained in the organic solvent.

Abstract: There is provided a rectifying element which is provided with an insulating base, (a) a pair of electrodes composed of a first electrode and a second electrode and (b) a semiconductor layer arranged between the pair of electrodes, wherein the components (a) and (b) are provided on a first surface of the insulating base. The rectifying element is configured such that the semiconductor layer (b) contains carbon nanotube composites each of which comprises a carbon nanotube and a conjugated polymer adhered onto at least a part of the surface of the carbon nanotube. The present invention provides a rectifying element having excellent rectifying properties by a simple process.

Abstract: An object of the invention is to provide a water-based lithographic printing method that is excellent in printing quality and environmental aspects. The invention concerns a method of producing a printed material, including the steps of: allowing a water-based ink to adhere to a surface of a heat sensitive layer of a lithographic printing plate having a surface on which an ink repelling layer and the heat sensitive layer exist; and transferring the adhering water-based ink directly or via a blanket to a printing substrate.

Abstract: Provided is a CNT composite capable of achieving both high detection sensitivity and specific detection when used as a sensor. The carbon nanotube composite includes an aggregation inhibitor (A) and a blocking agent (B) attached to at least a portion of a surface.

Abstract: A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

Abstract: An object of the present invention is to provide a waterless lithographic printing plate precursor that sufficiently repels ink, which tends to adhere to non-imaging areas, and maintains its repelling effects, and a printing method using a waterless lithographic printing plate obtained from the waterless lithographic printing plate precursor. The following are provided: a lithographic printing plate precursor having at least a heat sensitive layer and an ink repellent layer, wherein the ink repellent layer contains an ink repelling, the ink repellent liquid having a boiling point of not less than 150° C.

Abstract: An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.

Abstract: An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.

Abstract: A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

Abstract: There is provided a field effect transistor which comprises a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. The gate insulating layer contains an organic compound that contains a silicon-carbon bond and a metal compound that contains a bond between a metal atom and an oxygen atom; and the metal atoms are contained in the gate insulating layer in an amount of 10 to 180 parts by weight with respect to 100 parts by weight of the total of carbon atoms and silicon atoms. This field effect transistor (FET) has high mobility and a low voltage of the threshold value, while being suppressed in leak current.

Abstract: To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.