Abstract: The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

Abstract: The present invention is a resist material containing: (i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2), (ii) a photo-acid generator, (iii) a basic compound, and (iv) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

Abstract: The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W1; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer.

Abstract: A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound.

Abstract: A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Abstract: The present invention provides a method for producing a silicon compound shown by the following general formula (3) through a hydrosilylation reaction between a hydrosilane compound shown by the following general formula (1) and a carbonyl group-containing alicyclic olefin compound shown by the following general formula (2), in which the hydrosilylation reaction takes place while an acidic compound or acidic compound precursor is gradually added in presence of a platinum-based catalyst. This provides a highly-efficient industrial method for producing an industrially useful, hydrolysable silicon compound having an alicyclic structure (particularly a norbornane ring) and a carbonyl group.

Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

Abstract: A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.

Abstract: A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.

Abstract: The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

Abstract: The invention provides a method for purifying dihydroxynaphthalene, which is capable of suppressing soft particle generation and obtaining dihydroxynaphthalene serving as a raw material of a resin and composition excellent in filterability. The method for purifying dihydroxynaphthalene includes the step of removing a sulfur content in the dihydroxynaphthalene with an adsorbent, and neutral alumina is used as the adsorbent.

Abstract: The invention provides: a dihydroxynaphthalene condensate which suppresses soft particle generation and is suitably usable for a composition excellent in filterability; and a method for producing the dihydroxynaphthalene condensate, in the method for producing a dihydroxynaphthalene condensate, dihydroxynaphthalene to be used has a sulfur element content of 100 ppm or less in terms of mass among constituent elements. The dihydroxynaphthalene and a condensation agent are condensed in presence of an acid or a base to produce the dihydroxynaphthalene condensate.