Patents by Inventor Seiji Matsuyama
Seiji Matsuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230298884Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: March 22, 2023Publication date: September 21, 2023Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Patent number: 11670503Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: GrantFiled: January 10, 2020Date of Patent: June 6, 2023Assignee: Lam Research CorporationInventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Patent number: 11646198Abstract: Methods for depositing films by atomic layer deposition using aminosilanes are provided.Type: GrantFiled: July 16, 2021Date of Patent: May 9, 2023Assignee: Lam Research CorporationInventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Publication number: 20210343520Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: July 16, 2021Publication date: November 4, 2021Applicant: Lam Research CorporationInventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Patent number: 11101129Abstract: Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.Type: GrantFiled: June 28, 2019Date of Patent: August 24, 2021Assignee: Lam Research CorporationInventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Publication number: 20200152446Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: January 10, 2020Publication date: May 14, 2020Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Patent number: 10566187Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: GrantFiled: March 20, 2015Date of Patent: February 18, 2020Assignee: Lam Research CorporationInventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Publication number: 20190378710Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: June 28, 2019Publication date: December 12, 2019Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Publication number: 20160276148Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.Type: ApplicationFiled: March 20, 2015Publication date: September 22, 2016Inventors: Jun Qian, Hu Kang, Adrien LaVoie, Seiji Matsuyama, Purushottam Kumar
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Patent number: 8288833Abstract: A semiconductor device includes: a semiconductor substrate; an interface layer formed on the semiconductor substrate; a high-k gate dielectric film formed on the interface layer; and a gate electrode formed on the high-k gate dielectric film. The high-k gate dielectric film contains La. The high-k gate dielectric film has the higher La concentration in an interface with the gate electrode than in an interface with the interface layer.Type: GrantFiled: November 18, 2010Date of Patent: October 16, 2012Assignee: Panasonic CorporationInventor: Seiji Matsuyama
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Patent number: 8183165Abstract: According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.Type: GrantFiled: February 1, 2011Date of Patent: May 22, 2012Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Patent number: 8021987Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: GrantFiled: December 7, 2009Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Publication number: 20110124202Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: ApplicationFiled: February 1, 2011Publication date: May 26, 2011Applicant: Tokyo Electron LimitedInventors: Seiji MATSUYAMA, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Publication number: 20110062530Abstract: A semiconductor device includes: a semiconductor substrate; an interface layer formed on the semiconductor substrate; a high-k gate dielectric film formed on the interface layer; and a gate electrode formed on the high-k gate dielectric film. The high-k gate dielectric film contains La. The high-k gate dielectric film has the higher La concentration in an interface with the gate electrode than in an interface with the interface layer.Type: ApplicationFiled: November 18, 2010Publication date: March 17, 2011Applicant: PANASONIC CORPORATIONInventor: Seiji Matsuyama
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Patent number: 7897518Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: GrantFiled: April 9, 2010Date of Patent: March 1, 2011Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Patent number: 7883746Abstract: In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M?1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N?1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.Type: GrantFiled: July 16, 2007Date of Patent: February 8, 2011Assignee: Panasonic CorporationInventors: Jun Suzuki, Kenji Yoneda, Seiji Matsuyama
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Publication number: 20100196627Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: ApplicationFiled: April 9, 2010Publication date: August 5, 2010Applicant: Tokyo Electron LimitedInventors: Seiji MATSUYAMA, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Patent number: 7759598Abstract: A method for hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the substrate to the plasma. A preferred method comprises forming a gate insulation film on a substrate, forming a polysilicon electrode on the gate insulation film, and exposing the polysilicon electrode to an atmosphere comprising hydrogen radicals and hydrogen ions.Type: GrantFiled: April 25, 2007Date of Patent: July 20, 2010Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Seiji Matsuyama, Masaru Sasaki
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Patent number: 7723241Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.Type: GrantFiled: September 1, 2006Date of Patent: May 25, 2010Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Toshio Nakanishi, Shigenori Ozaki, Hikaru Adachi, Koichi Takatsuki, Yoshihiro Sato
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Publication number: 20100105215Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: ApplicationFiled: December 7, 2009Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya SUGAWARA, Yoshihide TADA, Genji NAKAMURA, Shigenori OZAKI, Toshio NAKANISHI, Masaru SASAKI, Seiji MATSUYAMA, Kazuhide HASEBE, Shigeru NAKAJIMA, Tomonori FUJIWARA